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    Globetek Inc BL5000C21704S3PFSM106ICC2NN

    LITHIUM BATTERY 21700 14.4V 15AH
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    DigiKey BL5000C21704S3PFSM106ICC2NN Bulk 4
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    Globetek Inc BL5000C21703S4PFTM106ICC2NN

    BATTERY PACK LI-ION 10.8V 21700
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    DigiKey BL5000C21703S4PFTM106ICC2NN Bulk 1
    • 1 $97.01
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    Globetek Inc BL5000C21703S4PFSM106ICC2NN

    LITHIUM BATTERY 21700 10.8V 20AH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BL5000C21703S4PFSM106ICC2NN Bulk 4
    • 1 -
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    Globetek Inc BL5000C21704S4PFTM106ICC2NN

    BATTERY PACK LI-ION 14.4V 21700
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BL5000C21704S4PFTM106ICC2NN Bulk 1
    • 1 $127.2
    • 10 $127.2
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    Globetek Inc BL5000C21704S4PFSM106ICC2NN

    BATTERY PACK LI-ION 14.4V 21700
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BL5000C21704S4PFSM106ICC2NN Bulk 4
    • 1 -
    • 10 $132.4925
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    ICC2N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM48BM1684LBA

    Abstract: cke02 EM48BM1684LBA-75F 54bA
    Text: eorex EM48BM1684LBA Revision History Revision 0.1 May. 2007 - First release. Revision 0.2 (May. 2008). - change package out-line spec : from 12.5mm x 10.0mm to 12.0mm x 10.0mm Revision 0.3 (Aug. 2008). - change ICC spec : ICC2N : 12 MA ICC2Ns. : 5 MA ICC3P :


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    PDF EM48BM1684LBA 512Mb 133MHz 166MHz EM48BM1684LBA cke02 EM48BM1684LBA-75F 54bA

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM44S16030C 4M x 4Bit x 4 Banks Synchronous DRAM


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    PDF KM44S16030C 10/AP

    Untitled

    Abstract: No abstract text available
    Text: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.


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    PDF EM488M3244VBC 256Mb EM488M3244VBC

    EM488M3244VBC-75FE

    Abstract: EM488M3244VBC EM488M3244VBC-75F
    Text: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.


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    PDF EM488M3244VBC 256Mb EM488M3244VBC-75FE EM488M3244VBC EM488M3244VBC-75F

    EM484M1644VTA

    Abstract: No abstract text available
    Text: eorex EM484M1644VTA Revision History Revision 0.1 Jun. 2009 -First release Revision 0.2 (July 2013) -Update DC/AC parameter -DC parameters update points. 1. ICC2P 1.5ma to 10ma. 2. ICC2PS 1ma to 5ma. 3. ICC2N 20ma to 30ma. 4. ICC2NS 10ma to 25ma. 5. ICC3P 7ma to 30ma.


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    PDF EM484M1644VTA 110ma 115ma. EM484M1644VTA

    KM48S8030C

    Abstract: No abstract text available
    Text: KM48S8030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM


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    PDF KM48S8030C KM48S8030C 10/AP

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


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    PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    IS42VS16100E

    Abstract: 42VS16100E IS42VS16100E-75BLI
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


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    PDF IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory


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    PDF AMP377P3323AT2-C1H/H AMP377P3323AT2-C1H/H 400mil 18-bits 168-pin 0022uF 100MHz 100MHz

    74605

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75


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    PDF AVED16P664LS49-C75 AVED16P664LS49-C75 400mil 144-pin 144-pin 74605

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H


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    PDF AMP366P1723AT2-C1H AMP366P1723AT2-C1H 400mil 168-pin 100MHz

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory


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    PDF AMP366P1623BTE-C75/H AMP366P1623BTE-C75/H 400mil 168-pin 168-pin6 100MHz PC100

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic


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    PDF AMP374P1723AT2-C1L AMP374P1723AT2-C1L 400mil 168-pin 168-MHz 100MHz

    AVED8P664LS48-C75

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The


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    PDF AVED8P664LS48-C75 AVED8P664LS48-C75 400mil 144-pin non-256M

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic


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    PDF AMP374P3323CT2-C75 AMP374P3323CT2-C75 400mil 168-pin 100MHz PC100

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


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    PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    dynamic ram binary cell

    Abstract: QBA-1 qab1
    Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


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    PDF VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1

    K4S643233H

    Abstract: K4S643233H-F
    Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,


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    PDF K4S643233H 32Bit 90FBGA K4S643233H-F

    F5401

    Abstract: io 1207 100MHZ 54-PIN F5402
    Text: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT SYNCHRONOUS DRAM SPACE PRODUCTS VDD 1 97SD10004RP 54 VSS CS 7 NC VDDQ VSSQ CS 6 NC DQ0 DQ3 VSSQ VDDQ CS 5 NC CS 4 NC VDDQ VSSQ CS 3 NC DQ1 DQ2 VSSQ VDDQ CS 2 VDD VSS CS 1 NC/RFU WE DQM NC/A13 CAS CLK RAS CKE CS 0


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    PDF 97SD10004RP NC/A13 NC/A12 A10/AP 99Rev0 F5401 io 1207 100MHZ 54-PIN F5402

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


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    PDF 256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A

    K4S28323LF

    Abstract: K4S28323LF-F
    Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,


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    PDF K4S28323LF 32Bit 90FBGA K4S28323LF-F

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


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    PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    TM4SN64EPN10

    Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
    Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •


    OCR Scan
    PDF TM2SN64EPN 64-BIT TM4SN64EPN SMMS696 TM2SN64EPN. TM4SN64EPN 66-MHz 168-Pin TM4SN64EPN10 TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812