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    IC EB 5 Search Results

    IC EB 5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC EB 5 Price and Stock

    Microchip Technology Inc PIC18F14Q20T-I/REB

    8-bit Microcontrollers - MCU 16KB Flash, 1K RAM, 256 EEPROM, I3C, MVIO 10b ADCC, 8b DAC, DMA, 16-bit PWM, PPS, UART, SPI/I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC18F14Q20T-I/REB 3,300
    • 1 $0.96
    • 10 $0.96
    • 100 $0.88
    • 1000 $0.84
    • 10000 $0.84
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    Microchip Technology Inc PIC18F15Q20T-I/REB

    8-bit Microcontrollers - MCU 32KB Flash, 2K RAM, 256 EEPROM, I3C, MVIO 10b ADCC, 8b DAC, DMA, 16-bit PWM, PPS, UART, SPI/I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC18F15Q20T-I/REB 3,299
    • 1 $1.04
    • 10 $1.04
    • 100 $0.95
    • 1000 $0.93
    • 10000 $0.93
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    Microchip Technology Inc PIC18F15Q41T-E/REB

    8-bit Microcontrollers - MCU Op Amp, 32KB Flash, 2K RAM, 512 EEPROM, 12b ADCC, 8b DAC, DMA, 16-bit PWM, PPS, UART, SPI/I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC18F15Q41T-E/REB 3,290
    • 1 $1.35
    • 10 $1.35
    • 100 $1.24
    • 1000 $1.2
    • 10000 $1.2
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    Microchip Technology Inc PIC18F15Q40-I/REB

    8-bit Microcontrollers - MCU 32KB Flash, 2K RAM, 512 EEPROM, 12b ADCC, 8b DAC, DMA, 16-bit PWM, PPS, UART, SPI/I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC18F15Q40-I/REB 3,257
    • 1 $1.14
    • 10 $1.14
    • 100 $1.04
    • 1000 $0.99
    • 10000 $0.99
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    Microchip Technology Inc PIC18F16Q20T-I/REB

    8-bit Microcontrollers - MCU 64KB Flash, 4K RAM, 256 EEPROM, I3C, MVIO 10b ADCC, 8b DAC, DMA, 16-bit PWM, PPS, UART, SPI/I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC18F16Q20T-I/REB 2,877
    • 1 $1.18
    • 10 $1.18
    • 100 $1.08
    • 1000 $1.04
    • 10000 $1.04
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    IC EB 5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N TELEPHONE: 973 376-2922 (212) 227-0005 FAX-(973) 376-3980 5633 HIGH VOLTAGE-HIGH-POWER NPN SILICON TRANSISTORS "MAXIMUM RATINGS Riling Symbol 2MG633 Unit VCEO 120 Vdc VCB V EB ic 120 Vdc 7,0 Vdc Collector-emitter Voltage


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    PDF 2MG633

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET „ Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,


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    PDF NN30311A NN30311A

    Untitled

    Abstract: No abstract text available
    Text: pm ui sn hi ab tu ut rt eo n c is rwc i ut ic t h eb so a r d p r o d u c t s Series 034 – TO-5 Miniature PCB Mount actual size Features Electrical Characteristics • Circuit: SPST-NO momentary Life Expectancy: In excess of 1,000,000 actuations • Gold contacts


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    QM100TF-HB

    Abstract: QM20TD-H QM20TD-HB QM20KD-HB TX-IA QM30 QM30TB-24 QM30TB-2H QM30TB-2HB QM30TX-H
    Text: 264 - - h ^ i f a - ;U [N P N , a 'i -y v ] I c— 1 A, V eb — 2 V , ft VcBO £ V C EX SUS # ÉPÜVCEX m * V EBO Ic I FM I s (A ) (A ) V i. m ) (A ) (W ) CC) (A ) T .i, Ti (£ 3 ) rc> (V ) % V CE V EB (m A ) ft (V ) (V ) ft * V EB X (V ) (V ) ft /J'


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    PDF H-101 QM100TF-HB QM20TD-H QM20TD-HB QM20KD-HB TX-IA QM30 QM30TB-24 QM30TB-2H QM30TB-2HB QM30TX-H

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Emitter Voltage ^CEO 140 Collector-Base Voltage ^CBO 6 Emitter-Base Voltage ^EB 50 Collector Current - Continuous Ic 100 - Peak 20 Base Current Ib Total Device Dissipation


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    PDF 300ns,

    STP5508

    Abstract: No abstract text available
    Text: STP5508 HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Em itter Voltage ^CEO 140 Collector-Base Voltage VcBO 6 Emitter-Base Voltage ^EB 50 Collector C u rren t - Continuous Ic 100 - Peak 20 Base C urrent Ib Total Device Dissipation


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    PDF STP5508 300ns, STP5508

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.


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    PDF 2N3906U -50mA, 2N3904U. 300ns 1N916 20/xs 300//S,

    Untitled

    Abstract: No abstract text available
    Text: HIP6021 S em iconductor F eb ru ary 1999 D ata S h eet Advanced PWM and Triple Linear Power Controller The HIP6021 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC


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    PDF HIP6021 HIP6021 28-pin 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: SSE D • 7=^0741 OODO'IDT DÜ7 Silicon PN P Epitaxial Planar H S AK J ■ ^3 2SA1294 Application Example : Unit V -5 V Ic -1 5 Ib -4 Ie b o V eb= -5 V — lOOmax „A V BR CEO Ic —230min V hFE A = -2 5 m A = —5 A , 40min VcE(sat) lo fT V c e = - 1 2 V , Ie = 2 A


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    PDF 2SA1294 40min 230min 100tnax 35typ T0220)

    b883

    Abstract: No abstract text available
    Text: Tem ic HM 65797 S e m i c o n d u c t o r s 256 K x 1 High Speed CMOS SRAM Short description. P lease refer to the full datasheet available on T EM IC w eb for detailed technical inform ation. Introduction T he H M 65797 is a high speed CM O S static RA M


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    PDF SMD5962-88725) b883

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    tic 1060

    Abstract: No abstract text available
    Text: Panasonic Aluminum Electrolytic Capacitors/EB Aluminum Electrolytic Capacitors Radial Lead Type M in ia tu riz a tb n ForE ictonfc Ba]fest (Hgh Volage) C ic u it fcr contro] (Low V olage) F e a tm ss Life tm e : 105 CC 5000 - lOOOOh JncJude Low Profite p ro d u c ts


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    PDF 5000h tic 1060

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.


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    PDF KTN2222U/AU x-10nA KTN2907U/2907AU. KTN2222U KTN2222AU

    Untitled

    Abstract: No abstract text available
    Text: Tem ic HM 65799 Semi co nd u ct o rs 64 K X 4 with OE High Speed CMOS SRAM Short description. Please refer to the full datasheet available on T EM IC w eb for detailed technical inform ation. Description The HM 65799 is a high speed C M O S static RA M organized as 65,536 x 4 bit. It is m anufactured using


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    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LT» 2 D000S3Ô 3 ^ S A K J 3SE D POWER TRANSISTORS Note I2SA TYPE Pc VcBO VCEO V eb o 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 1386A 2SA1488 1488A ( T a = 2 S 'C ) Ic Ib Tj (V) (A) (A) CC) -5 -10 -2 150 150 -160 -160 - 5


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    PDF D000S3Ã 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488

    Untitled

    Abstract: No abstract text available
    Text: GaAs 1C 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.5-2.5 GHz EB Alpha AV106-12 Features SOIC-8 • Single Positive +3 V Control Voltage ■ 35 dB Attenuation Range @ 0.9 GHz ■ Excellent Linearity Performance Description The AV106-12 GaAs IC FET voltage variable attenuator


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    PDF AV106-12 AV106-12 10/98A

    BFY50 equivalent

    Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
    Text: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments


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    PDF CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 BFY50 equivalent 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti

    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


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    PDF SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467

    MPS6563

    Abstract: MPS6561 PS6563
    Text: MPS6561, MPS6563 continued E L E C T R IC A L C H A R A C T E R IS T IC S ( T / k = 2 5 ° C u n le ss o th e rw is e n o te d .) C h a r a c t e r is t ic M ax Sym b o l M in U n it V cE O (su s) 20 - Vdc B V CßO 20 - Vdc b v eb o 5 .0 - Vdc lCEO - 100


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    PDF MPS6561, MPS6563 100MAdc, MPS6561 PS6563 MPS6563

    SP3725QDB

    Abstract: 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts


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    PDF SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 BSY51 2N2218 BSY52 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252

    2N5146

    Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts


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    PDF SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 VC2N3737 2N3762 2N3763 2N5146 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468

    569380

    Abstract: No abstract text available
    Text: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST AA 22 LTR DESCRIPTION DATE REV PER EC 0S11-0188-03 A A A [ .0 3 5 ] T Y P IC A L APVD EB BK MATERIAL: H OUSING - PCT PO LYE STER , BLACK, U L 9 4 V - 0 .


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    PDF 0S11-0188-03 12MAR2004 27jum 31MAR2000 569380

    6dl3

    Abstract: Scans-001759 rs tube
    Text: 6DL3 Half-Wave Vacuum Rectifier NO VA R TYPE Top Cap Cathode Connection • Pressure-Welded Cathode Coating ■ RCA Dark Heater ■ Voltage Drop: Eb = 25V for l|j - 800 mA E LE C TR IC A L CHAR AC TER ISTIC S - Bogey Values Heater Voltage, ac or d c .


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    PDF CI-33 E9-89 92CS-1 6dl3 Scans-001759 rs tube

    SCK 164

    Abstract: MSM7622GS-BK QFP100-P-1420-0 6965f isdn echo cancellation ic
    Text: Oki Semiconductor MSM7622 IraforragiiScairo Quad EchoBuster D ES C R IP TIO N The M SM 7622, referred to as the "Q uad EchoBuster™ Q EB ," is a cost-effective CM OS IC device that integrates four stand-alone echo cancellers onto one chip. The Quad EchoBuster™ is designed for tele­


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    PDF MSM7622 MSM7622, 220-m SCK 164 MSM7622GS-BK QFP100-P-1420-0 6965f isdn echo cancellation ic