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    IC D 2N60 Search Results

    IC D 2N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC D 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANTX 2N6340

    Abstract: JANTX 2N6341 2N6338A 2N6277A 2N6274A 2N6275 2N6276 2N6322 2N6323 2N6326
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 Ic/ V c E min/max @ A/V DEVICE TYPE V ceo (sus) VOLTS Ic (max) AMPS 2N6032A 90 50 10-50@50/2.6 2N6033A 120 40 2N6274A 100 2N6275 hjT E @ VcE(Mt) @ Ic^B (V @ A/A) p * r D f T WATTS (MHz)


    OCR Scan     		PDF 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 JANTX 2N6340 JANTX 2N6341 2N6338A

    2N5832

    Abstract: No abstract text available
    Text: 8 5 1 4 0 1 9 SPR A G U E. Û513Ô5Ü •=13 SP RA GU E/SEN IC OND GROUP OGOBSfl^ SEM IC O N D S/ IC S T 93D 0 3 5 8 9 D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain


    OCR Scan     		PDF TP5824 TP5825 2N5830 2N5831 2N5832 TP5961 2N5998 2N6008 2N6426 2N6427

    BC286

    Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
    Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l


    OCR Scan     		PDF 2S14096 2N1507 2N1566 2N1613 2NI711 2N1889 2N1890 2N1893 2N1973 2N1974 BC286 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901

    2N4355

    Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
    Text: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D


    OCR Scan     		PDF 50113G 003SMM3 30fiA, 2N4355 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 2N4354 T-12

    Fairchild 2N6488

    Abstract: MJ802 MJ4502 2n5301 2N5629 2N3771 2N6030 SE9407 2N3772 2N5630 2N5631
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BYlcmax, POLARITY AND ASCENDINGVcEO Item DEVICE NO. Polarity NPN PNP VCEO V Max @ ic v CE(sall) V A Max Min/Max hFE @ ic A *T MHz Mln(Typ) (Contd) l*D(Max) W TC=25°C Package No. ic = 15.0 A Max Continuous (Cont’d)


    OCR Scan     		PDF 2N6488 2N6491 O-220 2N6577* 2K/20K 2N5629 2N6029 2N5630 2N6030 2N5631 Fairchild 2N6488 MJ802 MJ4502 2n5301 2N5629 2N3771 SE9407 2N3772 2N5630 2N5631

    2N6657

    Abstract: 2N5629 2N6658 2N6030 2N6658 V MOS P FVP1 MJ4502 SE9308 2N3772 2N5630
    Text: FAIRCHILD TRANSISTORS POW ER POWER TRANSISTORS BYlcmax, POLARITY AND ASCENDINGVcEO Item ic = DEVICE NO. Polarity NPN PNP VCEO V Max @ ic v CE(sall) V A Max Min/Max hFE @ ic A *T MHz Mln(Typ) (Contd) l*D(Max) W TC=25°C Package No. 15.0 A Max Continuous (Cont’d)


    OCR Scan     		PDF 2N6488 2N6491 O-220 2N6577* 2K/20K 2N5629 2N6029 2N5630 2N6030 2N5631 2N6657 2N5629 2N6658 2N6658 V MOS P FVP1 MJ4502 SE9308 2N3772 2N5630

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


    OCR Scan     		PDF 0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266

    TO63 package

    Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


    OCR Scan     		PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


    OCR Scan     		PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440

    FT3055

    Abstract: 2N3055 TO220 SE9302 mj2955 TO-220 2N3440 2N5683 2N5684 2N5685 FT431 2NS840
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


    OCR Scan     		PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6S69 2N6057* 2N6050* 750/18K 2N5881 FT3055 2N3055 TO220 SE9302 mj2955 TO-220 2N3440 FT431 2NS840

    2N6049

    Abstract: 8002 Amplifier IC SM 8002 SM 8002 C 2443 MOTOROLA transistor 80417
    Text: MOTOROLA SC 6367254 DE I t.3t,7SS4 ODflDMl t 1 | - CXS TRS/ R F J M OTO RO LA MOTOROLA SC XSTRS/R F 96.D 8 0 4 1 6 B S E M IC O N D U C T O R 2N6049 T -3 3 -2 ! TECHNICAL DATA MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . designed for general-purpose switching and amplifier applications


    OCR Scan     		PDF 2N6049 8002 Amplifier IC SM 8002 SM 8002 C 2443 MOTOROLA transistor 80417

    Untitled

    Abstract: No abstract text available
    Text: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C


    OCR Scan     		PDF 2N6038 O-126 15OOO

    2N4211

    Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
    Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP


    OCR Scan     		PDF 0D0D130 T-33-13 mDDETMI\l515TDRCCLiniC. NPNTO-63 2N1936 2N1937 2N3265 2N3266 2N3597 2N6246 2N4211 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210

    RCA 40872

    Abstract: RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636
    Text: M O N O LITH IC D A R LIN G TO N T Y P E S H E R M E T IC lc • 8 A max. P j - 3 6 W max. TO-66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC lt z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. P y ■ 100 W max. (TO-3) lc •= - 1 0 A max.


    OCR Scan     		PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 RCA 40872 RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636

    diac SBS 14

    Abstract: DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application
    Text: MOTOROLA SEMICONDUCTOR r APPLICATION NOTE AN964 T rig g e r D esign Ideas for D iac Replacem ents INTRODUCTION T h e fam ily o f d e v ic e s d e sig n e d for controlling S C R s and triacs are called triggers. T h e m ore c o m m o n trigge rs are unijunction tra n sisto rs, p ro g ra m m a b le unijunction


    OCR Scan     		PDF AN964/D AN964/D diac SBS 14 DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a


    OCR Scan     		PDF 725GS33 2N6103 O-220 2N3055 FGT3055 2N3442 2N6101 T0-220 2N6099

    2N6575

    Abstract: 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276
    Text: NE li ENGLAND SEMICONDUCTOR STE D • b S b H li a OQQQQSb SO? « N E S 'T'-B&'O t NPN TO-3 2-50A V ceo sus) = 35*500V fT = 0.2-50 MHz lc ( M A X ) = VBE @ le/VCE (V @ A/V) PD @ TC = 25 °C VCEO le (SUS) (MAX) hFE @ IC/VCE VCE (SAT) @ IC/ IB (V) (A) (min-max @ A/V)


    OCR Scan     		PDF 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 5-500V 2N6575 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276

    BU102

    Abstract: 2N914 transistor bu102 BD663B BDX71 bsx30 BSX26 2N2475 2N915 BSV91
    Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors Metal Can TO IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X BU102 transistor bu102 BD663B BDX71 bsx30 2N2475 2N915 BSV91

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER & SIGNAL TECHNOLOGIES tm 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR B V ceo . . . 25 V Min hFE . . . 100 (Min) @ V c e = 10 V, I c = 10 m A l 2 B C ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature


    OCR Scan     		PDF 2N6076

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    2N5832

    Abstract: 2n6008
    Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 0SD433Ô TP5810 TP5812 TP5814 TP5816 TP5818 TP5820 TP5822 TP5824 TP5825 2N5832 2n6008

    245A-02

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per


    OCR Scan     		PDF h3b7254 MIL-S-19500/ O-116) 245A-02

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)


    OCR Scan     		PDF 2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 To-126 C1000SE3 O-105 O-106