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    SP5630

    Abstract: No abstract text available
    Text: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		PDF I8L24512V 512KX24 I8L24512V 5630x ca-40 EDI8L24512V15AC EDI8L24512V17AC EDI8L24512V20AI SP5630

    5630x

    Abstract: 512Kx2
    Text: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		PDF 512Kx24 5630x M0-47AE EDI8L24512V EDI8L24512V -40Cto EDI8L24512V12AC EDI8L24512V15AC 5630x 512Kx2

    JEDECMO-47AE

    Abstract: No abstract text available
    Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,


    OCR Scan     		PDF I8L32512V 512Kx32 ADSP-21062L I8L32512V ADSP-21060L TMS320LC31 MPC860 S320LC EDI8L32512V JEDECMO-47AE