Untitled
Abstract: No abstract text available
Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000C
HY531000A
HYM591000CM/CLM
1BB08-10-MAY93
1BB08-10-MAYM
1BB08-10-MAVM
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HYM591000AM
Abstract: bb04 HY531000
Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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OCR Scan
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HYM591000A
HY514400
HY531000
HYM591000AM
tWCHf31)
BB04-20-M
04-20-M
bb04
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HYM591000
Abstract: HY531000 HYM591000M AV93
Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000
HY531000
HYM591000M
1BB02-12-MAYM
1BB02-12-MAY93
AV93
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000C
HY531000A
22/iF
HYM591OOOCM/CLM
1BB08-10-MAYW
4b750Ã
07IV7B1
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PDF
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HYM591000
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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OCR Scan
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HYM591000A
HY514400
HY531000
HYM591000AM
0177G
1BB04-20-M
0QG1771
HYM591000
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HYM591000M
Abstract: No abstract text available
Text: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine
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OCR Scan
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75Gfifi
HYM591000
591000M
HYM591000M
HY531000J
HYM591000
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HYM591
Abstract: HY531000J
Text: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin
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OCR Scan
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M431201A-APR91
HYM591000
HY531000J
22jiF
HYM591000M
HYM591000P
HYM591000M/P-60
HYM591000M/P-70
HYM591000M/P-80
HYM591000M/P-10
HYM591
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PDF
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HYM591000B
Abstract: No abstract text available
Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is
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OCR Scan
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HYM591000B
HY514400A
HY531000A
HYM591000BM/BLM
BB06-00-M
1BB06-00-M
1BB06-00-MAY93
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM591000B M-Series 1M x9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is
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OCR Scan
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HYM591000B
HY514400A
HY531000A
22/uF
HYM591000BM/BLM
HYM591610M/LM
031MIN.
HYM591610TM/LTM
08ffi
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PDF
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Untitled
Abstract: No abstract text available
Text: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin
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OCR Scan
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HYM591000
M431201A-APR91
HYM591000
HY531000J
HYM591000M
HYM591000P
HYM591000M/P-60
HYM591000M/P-70
HYM591000M/P-80
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PDF
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HYM591000
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000
HY531000
HYM591000M
40nsffl
1BB02-12-MAY93
000175b
4b750flfl
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is
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OCR Scan
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HYM591000B
HY514400A
HY531000A
HYM591000BM/BLM
BB06-00-M
1-274/-0-0ai
29MAX.
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