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    Abstract: No abstract text available
    Text: » « H Y U N D A I ín g H Y 5 1 V 4 4 6 0 B _S g n g s 256K X 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY51V4460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve


    OCR Scan     		PDF 16-bit HY51V4460B 400mil 40pin 40/44pin 1AC28-00-MA HY51V446B HY514370BJC

    4460B

    Abstract: No abstract text available
    Text: .« v u N d a i HY51 V4460B_Series 256K X 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY51V4460B is the new generation and fast dynam ic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve


    OCR Scan     		PDF 16-bit HY51V4460B 40pin 40/44pin 1AC28-00-MAY94 HY51V446B HY514370BJC HY514370BUC 4460B