HY51V17404B
Abstract: No abstract text available
Text: “H Y U N D A I HY51V17404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V17404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17404B
HY51V17404B
1AD52-10-MAY95
HY51V17404BJ
HY51V17404BSLT
HY51V17404BT
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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WAOQ
Abstract: HY51V174 HY51V17404BJ
Text: HY51V17404B Series •HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 V 1 7 4 0 4 B is the n ew g e n e ra tio n a nd fa s t d y n a m ic R A M org a n ize d 4 ,1 9 4 ,3 0 4 x 4-bit. T h e H Y 5 1 V 1 7 4 0 4 B utiliz e s H y u n d a i's C M O S s ilicon g a te p ro ce ss te c h n o lo g y as w e ll a s a d va n ce d circu it te c h n iq u e s to p rovide w ide
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HY51V17404B
D52-10-M
HY51V17404BJ
HY51V17404BSLT
HY51V174
HY51V17404BR
HY51V17404BSLR
1AD52-10-M
WAOQ
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