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    Abstract: No abstract text available
    Text: HY4N60T / HY4N60FT 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original     		PDF HY4N60T HY4N60FT 2002/95/EC ITO-220AB O-220AB O-220AB ITO-220AB MIL-STD-750 HY4N60T 4N60T