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    Untitled

    Abstract: No abstract text available
    Text: HY4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original     		PDF HY4N60D HY4N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY4N60D 4N60D

    Untitled

    Abstract: No abstract text available
    Text: HY4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original     		PDF HY4N60D HY4N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY4N60D 4N60D