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Catalog Datasheet	MFG & Type	PDF	Document Tags
HP4432B Abstract: UPF21010 Text: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	PDF	UPF21010 Volt55 HP4432B UPF21010

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HP4432B

Abstract: UPF21010
Text: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

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UPF21010 Volt55 HP4432B UPF21010