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    HL7801 Search Results

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    HL7801 Price and Stock

    Hitachi Ltd HL7801E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HL7801E 1
    • 1 $46.3844
    • 10 $46.3844
    • 100 $46.3844
    • 1000 $46.3844
    • 10000 $46.3844
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    HL7801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HL7801

    Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
    Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838


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    PDF HL671IG HL671I HL7801 HL7802 HL7806 HL7831 HL7832 HL7836 HL7838 HL83H HE8807CL HL7801E HL1324MF HL83M HE8812 hitachi he1301

    HL7801G

    Abstract: HL7801 7801G
    Text: HITACHI/ OP TOEL ECTRON ICS 1ÖE D • MMibEOS GOlDflñ? a ■ HL7801G GaAIAs LD D escription H L 7801G is a 0.78 /nm G aA IA s laser diode w ith d o u b le h etero ju n ctio n stru ctu re. It is su itab le as a light so u rce in laser beam prin­ te rs, laser lev elers an d various o th e r types o f optical


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    PDF HL7801G 7801G HL7801G HL7801

    HL7801E

    Abstract: HL7801
    Text: HITACHI/ OPTOE LEC TRONIC S S4E D • MMTbiGS 0012D11 ^14 ■ H I T H HL7801E_ GaAIAs LD T-m-o5 Description The HL7801E is a 0.78 |im band GaAIAs laser diode with a double heterojunction structure. It is suitable as the light source in a variety of optical application devices, such as laser beam printers and laser levelers.


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    PDF 0012D11 HL7801E_ HL7801E HL7801E HL7801

    HL7801E

    Abstract: HL7801 7801E
    Text: HL7801E Laser Diode Description H L 7801E is a 0.78 /¿m G aA IA s laser diode with d o u b le h elero ju n ctio n stru ctu re. It is suitab le as a light so u rce in laser beam p rin ­ te rs, laser lev elers and various o th er types o f optical eq u ip m en t.


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    PDF HL7801E 7801E HL7801E HL7801

    HL7801

    Abstract: HL7806
    Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).


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    free transistor equivalent book 2sc

    Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
    Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com­


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    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


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    PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P