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    MATERIAL CONTROL PROCEDURE

    Abstract: DOS-1204-W SICK distance sensor sick mounting bracket DOL-1204-G05M Sensick Sensick KT Sensick P DOL-1204-W05M 3w led spot
    Text: switching threshold adjustment for very shiny scanning material or the static two point Teach-in on the mark and background make the KT 3 user-friendly both in operation startup and in everyday use. And thanks to the miniature design, the KT 3 is especially well


    Original     		PDF 000/s, 110th MATERIAL CONTROL PROCEDURE DOS-1204-W SICK distance sensor sick mounting bracket DOL-1204-G05M Sensick Sensick KT Sensick P DOL-1204-W05M 3w led spot

    SICK wt

    Abstract: SICK WT 4-2 on B540 B530 B510 B540 B550 SICK WT 24 EN 60825-1
    Text: N F O R M A T I O N Dimension illustration 1 6 T 5 16.5 ø4.2 E C H N I C A L 5.6 2 3 5 31 7.3 49 I 22.6 2 16 Photoelectric Proximity Switch 4 41.5 15 WT 12L-2 10 M4 24 Setting options WT 12L-2 B510 * 1 LED signal strength indicator yellow/green 2 Axis of the receiver optics


    Original     		PDF 12L-2 12L-2 SICK wt SICK WT 4-2 on B540 B530 B510 B540 B550 SICK WT 24 EN 60825-1

    n channel to252 30v 45A

    Abstract: STD45NF03L
    Text: STD45NF03L  N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS o n ID STD45NF03L 30 V < 0.013 Ω 45 A • ■ ■ TYPICAL RDS(on) = 0.011 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL


    Original     		PDF STD45NF03L n channel to252 30v 45A STD45NF03L

    STD38NF03L

    Abstract: No abstract text available
    Text: STD38NF03L  N - CHANNEL 30V - 0.013 Ω - 38A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS o n ID STD38NF03L 30 V < 0.0160 Ω 38 A • ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE


    Original     		PDF STD38NF03L O-252 STD38NF03L

    STD38NF03L

    Abstract: No abstract text available
    Text: STD38NF03L  N - CHANNEL 30V - 0.013 Ω - 38A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS o n ID STD38NF03L 30 V < 0.019 Ω 38 A • ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE


    Original     		PDF STD38NF03L O-252 STD38NF03L

    STD16NE10L

    Abstract: No abstract text available
    Text: STD16NE10L  N - CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS o n ID STD16NE10L 100 V < 0.10 Ω 16 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STD16NE10L STD16NE10L

    STD40NE03L

    Abstract: No abstract text available
    Text: STD40NE03L  N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD40NE03L 30 V < 0.016 Ω 40 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.012 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF STD40NE03L O-252 STD40NE03L

    Untitled

    Abstract: No abstract text available
    Text: STD40NE03L  N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD40NE03L 30 V < 0.016 Ω 40 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.012 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF STD40NE03L O-252

    TO-252 MOSFET p channel

    Abstract: No abstract text available
    Text: STD30NE06L  N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC


    Original     		PDF STD30NE06L O-252 100oC TO-252 MOSFET p channel

    BC 170 transistor

    Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
    Text: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W


    OCR Scan     		PDF BC807W, BC808W 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 BC 170 transistor bc 471 transistor bc 470 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors BSP 50 . BSP 52 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP Type Marking Ordering Code (tape and reel) Piti Coni ¡gura ion 1 2 3 4 Package1)


    OCR Scan     		PDF Q62702-P1163 Q62702-P1164 Q62702-P1165 OT-223 EHP0094J 0235bD5 B235b05

    3cs transistor

    Abstract: marking 3cs 6c2 transistor PS056
    Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package


    OCR Scan     		PDF PS05604 Q62702-C2373 OT-363 Mav-12-1998 3cs transistor marking 3cs 6c2 transistor PS056

    5Cs transistor

    Abstract: transistor 5bs 5BS transistor
    Text: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BC817W, BC818W 07-16W 07-25W 07-40W 08-16W 08-25W 08-40W Q62702-C2325 Q62702-C2326 5Cs transistor transistor 5bs 5BS transistor

    asssb

    Abstract: No abstract text available
    Text: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description


    OCR Scan     		PDF 23SbOS Q0147G2 C67078-A1016-A2 fl23SbOS 00147Db BUZ63 asssb

    300-06DA

    Abstract: 0143f
    Text: MEA 300-06DA MEE 300-06DA MEK 300-06DA Fast Recovery Epitaxial Diode FRED Module RRM FAVM rr 600 V 304 A 250 ns Preliminary data V„ V,R RM 600 600 V Type MEA300-06DA 1 'ÎI 1 MEK300-06DA MEE300-06DA 2 2 3 1 1",1“! f f1rî 2 M 1 N I ¡11 W * N 1 ! ! Î


    OCR Scan     		PDF 300-06DA 300-06DA MEA300-06DA MEE300-06DA MEK300-06DA 0143f

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP 2=C II 1 =B LU II CO O BDP 949 Q62702-D1337


    OCR Scan     		PDF BDP948, BDP950 Q62702-D1337 OT-223 Q62702-D1335 0235b05 fl23Sb05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For A F input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated N P N /PN P Transistors in one package Tape loading orientation


    OCR Scan     		PDF 847PN Q62702-C2374 OT-363 flE35fc fl235bD5 01SQ5Ã

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts — t CE = 35 ns • Low Power Consumption • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS57C256F WS57C256F stand28 MIL-STD-883C WS57C256F-70J WS57C256F-70JI WS57C256F-70T 57C256FB

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance


    OCR Scan     		PDF 23b3S0 QQ17177 BSS192 -240V Q62702-S602 23b320 T-37-25 80f/a;

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IGBT Module Half-Bridge Configuration VII100-12G4 ^C DC = 100 A V CES = 1200 V V CE (sat) = 2.6 V High Short Circuit SOA Capability Symbol Test C onditions V CES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; RGE = 1 MQ V GES v GEM Continuous Transient


    OCR Scan     		PDF VII100-12G4 Mbflb22b VII100-1264 GD027Ã

    BUZ100

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A


    OCR Scan     		PDF O-220 BUZ100L C67078-S1354-A2 BUZ100

    BUK445-500B

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK445-500B PINNING-SOT186 BUK445-500B

    Untitled

    Abstract: No abstract text available
    Text: BEBStiDS 00ûlb27 2Ô4 SIEMENS BSP 350 MiniSmart • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load


    OCR Scan     		PDF Q67000-S227

    hilton capacitors

    Abstract: No abstract text available
    Text: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information


    OCR Scan     		PDF