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    HJC 22 Search Results

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    HJC 22 Price and Stock

    Kyocera AVX Components THJC225K035RJN

    CAP TANT 2.2UF 10% 35V 2312
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    DigiKey THJC225K035RJN Digi-Reel 11,860 1
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    THJC225K035RJN Cut Tape 11,860 1
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    Kyocera AVX Components THJC226K016RJN

    CAP TANT 22UF 10% 16V 2312
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    DigiKey THJC226K016RJN Cut Tape 4,753 1
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    THJC226K016RJN Digi-Reel 4,753 1
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    THJC226K016RJN Reel 4,500 500
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    Mouser Electronics THJC226K016RJN 2,490
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    Newark THJC226K016RJN Cut Tape 9,000
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    Kyocera AVX Components THJC226K016SJN

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    Kyocera AVX Components THJC226K016AJN

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    Kyocera AVX Components THJC226M016SJN

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    HJC 22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r-12kn

    Abstract: CZ-200 cz300r
    Text: EUPEC Power transistor modules Type VcEXi VcBO V VsEO V ebo lc IcRM ton R,hjc t, ts RthCK tv, max O utline DC tp = 1 ms V V B 34032=17 0001347 ITO «U P E C b lE D 25 °C 125-C 25 °C 125°C 25 °C 125°C 25 °C 125°C typ. min. typ. max. typ. max. typ. max.


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    PDF 125-C r-12kn CZ-200 cz300r

    thyristor tt 18 N 1100

    Abstract: thyristor tt 18 f 1000 EUPEC tt 93 n EUPEC tt 93 n 14 thyristor tt 45 f 1100 thyristor tt 18 n 800 TD 42 F thyristor TD 42 F EUPEC TD 25 eupec tt 92 n 12
    Text: Fast thyristor modules Type V drm iH E EUPEC It r m s m I tsm /¡2dt I tavm ^ c V TO> •t '»,= tvj max tv, = 34D35T7 DOGOllt. Ö7fl D (di/dt cr (dv/dt)cr R,hjc DIN IEC 747-6 DIN IEC 747-6 sin. V rrm 10 ms, 180 °el tvj max sin. A A V 10 ms, tvj max A/°C


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    PDF 34D3H17 thyristor tt 18 N 1100 thyristor tt 18 f 1000 EUPEC tt 93 n EUPEC tt 93 n 14 thyristor tt 45 f 1100 thyristor tt 18 n 800 TD 42 F thyristor TD 42 F EUPEC TD 25 eupec tt 92 n 12

    kn transistor

    Abstract: r-12kn CC 50 R 06
    Text: EUPEC Power transistor modules Type VcEXi VsEO V ebo lc IcRM B blE » ton • 3 H D 3 2 CJ7 000131}? 1T0 « U P E C t, ts R,hjc RthCK tv, max Outline DC VcBO tp = 1 ms 25 °C typ. 125°C 25 °C 125°C 25 °C 125°C 25 °C 125°C min. typ. max. typ. max. typ.


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    PDF 125-C kn transistor r-12kn CC 50 R 06

    Untitled

    Abstract: No abstract text available
    Text: Type V drm V rrm Itr m sm Itsm 4TE D EU PEC Fast asymmetric thyristor modules /¡2dt ^TAVM^C V TO It (di/dt)cr (dv/dt)cr V) R ,hjc (V r r m (C) V V A UPEC T-3.3'0/ ^ th C K J tv j m a x 10 ms, 10 ms, tv, D IN D IN tyi max 180 °el Sin. t„ = ^vj max tv, max


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    PDF 34032T7 DD0117

    DIODE B-10

    Abstract: AD96S AD95S AD220S 95.85.1 AD60F asymmetric thyristor D15C
    Text: Fast asymmetric thyristor modules Type V drm V rrm It r m s m Itsm EUPEC / i 2dt mte d It a v m / * c V TO It (di/dt)cr • 34032 T 7 D e m o n ? ?om ■ V) (dv/dt)cr R,hjc ( V r r m (C) V V A T-^yoi UPEC | J ^thCK ^vj m ax OlJtfin 10 ms, 10 ms, 180 °el


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    PDF 3403et7 DIODE B-10 AD96S AD95S AD220S 95.85.1 AD60F asymmetric thyristor D15C

    20-561

    Abstract: axp smd
    Text: PD-20561 05/98 International IOR Rectifier 8TQ.S SERIES SCHOTTKY RECTIFIER 8 Amp D2Pak SMD-220 Major Ratings and Characteristics Description/Features Characteristics 8TQ.S Units lF(AVj Rectangular 8 A 80 to 100 V waveform V R RM r a n 9 e T h e 8 T Q .S S chottky rectifier series has been optim ized for


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    PDF PD-20561 SMD-220) D-220 20-561 axp smd

    Untitled

    Abstract: No abstract text available
    Text: EUPEC S5E ]> 34032^7 ÜÜÜQSSa ^SQ M U P E C A 518 S - T ^ Z S - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V V 15 V 50 Vdrm Vrrm Vrrm C


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127095 rev. A 08/97 International IÖ R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery lim e characteristics ■ Electrically isolated base plate I Industrial standard package ■ S im plitied m echanical designs, rapid assem bly


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    PDF I27095

    m073

    Abstract: NZT6728 TN6728A b41 sot223
    Text: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.


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    PDF TN6728A O-226 NZT6728 OT-223 bS0113D 4D73fl b501130 M073ci m073 NZT6728 TN6728A b41 sot223

    Untitled

    Abstract: No abstract text available
    Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS


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    PDF

    D476

    Abstract: D-476 32ctq030 D161
    Text: PD-2.267 International |k ?r ]Rectifier 32CTQ030 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 32CTQ030 Units Characteristics The 32CTQ030 center tap Schottky rectifier has been opti­ mized for very low forward voltage drop, with moderate


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    PDF 32CTQ030 32CTQ030 T0-220 D-161 D-162 D476 D-476 D161

    EUPEC TT 105 N 12

    Abstract: EUPEC TT 105 N 14 EUPEC tt 105 N 16 T698F t510s T760S EUPEC TT 56 n 16 A358S A618 T128F
    Text: EUPEC 52E D A 618 S 34032*17 ÜDGGSbE 3 fll «U PEC " F 2 5 - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm V r r m C


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    PDF T-91-20 EUPEC TT 105 N 12 EUPEC TT 105 N 14 EUPEC tt 105 N 16 T698F t510s T760S EUPEC TT 56 n 16 A358S A618 T128F

    Untitled

    Abstract: No abstract text available
    Text: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.


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    PDF MPSA56 MMBTA56 PZTA56 MPSA56 MMBTA56 OT-23 OT-223 bSD1130 PSA56

    25Q256

    Abstract: No abstract text available
    Text: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C


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    PDF PD-20478 20CJQ045 OT-223 25Q256

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C


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    PDF O-220 C67078-S1305-A4

    10-32-UNF-2A

    Abstract: No abstract text available
    Text: Bulletin 120204 10/96 Inte rn ation al IÖ R Rectifier 16F R SERIES STANDARD RECOVERY DIODES Stud Version Features 16 A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM


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    PDF I20204 10-32-UNF-2A

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12021/A International [^Rectifier 3oohf R s e r i e s STANDARD RECOVERY DIODES Stud Version 300A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 200V V RRM ■ S tu d c a th o d e and s tu d a n o d e v e rs io n


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    PDF 12021/A 300HF 4AS5452

    EUPEC powerblock

    Abstract: 082c
    Text: bl E D EUPEC 34032T7 000127G bTS « U P E C DD 175 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 2800,3000 3200 3400 V V V 100 V I frmsm 350 A I favm 175 223 A A Periodische Spitzensperrspannung repetitive peak reverse


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    PDF 34032T7 D127G -40oC. EUPEC powerblock 082c

    BUZ36

    Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
    Text: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C


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    PDF BUZ36 O-204 C67078-S1018-A2 235b05 00b7fl34 GL763S transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS lD = 200 V = 1 3 .5 A ^ D S o n = • 0 -2 BUZ 31 TO -220 AB Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 31 C67078-S1304-A2 G Maximum Ratings Parameter Symbol


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    PDF O-220 C67078-S1304-A2

    DIODE BUZ 94

    Abstract: No abstract text available
    Text: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1406-A2 40-------V DIODE BUZ 94

    BUZ20

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics


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    PDF MOSFETs-BUZ20 O-220AB 92GS-441 BUZ20

    GP 809 DIODE

    Abstract: BUZ,271
    Text: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


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    PDF O-220 C67078-S1453-A2 GP 809 DIODE BUZ,271

    tt218

    Abstract: MTH40N06
    Text: MTH40N06 MTH40N06FI /= T SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTH40N06 MTH40N06FI VDss 60 V 60 V ^DS on 0.028 « 0.028 n •d 40 A 26 A • VERY LOW ON-LOSSES • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ • LOW DRIVE ENERGY FOR EASY DRIVE


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    PDF MTH40N06 MTH40N06FI MTH40N06FI 500ms tt218