Untitled
Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION HiPerFET Power MOSFETs TM VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V ID cont RDS(on) trr 44 A 48 A 0.12 Ω 0.10 Ω 35 ns 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 4 1 HiPerFET MOSFET
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IXFN44N50U2
IXFN44N50U3
IXFN48N50U2
IXFN48N50U3
44N50
48N50
IXFN44N50U2
IXFN44N50U3
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1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
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000-1200V
IXFB30N120P
IXFL30N120P
IXFN30N120P
IXFL32N120P
IXFN32N120P
PluS220
IXFV110N10PS
1200 volt mosfet
1000 volt mosfet
mosfet 300 volt
HiperFET
IXFN38N100
sot 227b diode fast
transistor polar
2R4N120P
IXFN44N100P
IXFB44N100P
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS
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140N10P
O-247
065B1
728B1
123B1
728B1
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IXFN64N50PD2
Abstract: IXFN64N50PD3
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A 85m 200ns
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IXFN64N50PD2
IXFN64N50PD3
E153432
200ns
IXFN64N50PD2
IXFN64N50PD3
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Untitled
Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXFR24N90Q Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Power MOSFETs with Fast Intrinsic Diode HiPerFET > (100V to 1000V) Q-Class HiPerFETs Configuration: Single Package Style: ISOPLUS247™ Status: Not for New Designs: Contact the factory for lead times (part is still available for purchase).
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IXFR24N90Q
ISOPLUS247â
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44n50
Abstract: 48N50
Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30
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SMOS44/48N50D2,
SMOS44/48N50D3
OT-227
5ID25
300us,
00A/us;
80A/us;
44n50
48N50
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48N50
Abstract: 44N50
Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30
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SMOS44/48N50D2,
SMOS44/48N50D3
OT-227
5ID25
300us,
00A/us;
80A/us;
48N50
44N50
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS
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26N50P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC14N60P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC14N60P
200ns
220TM
E153432
14N60P
12-22-08-G
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IXFC14N60P
Abstract: 14n60 T14n
Text: IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC14N60P
200ns
220TM
E153432
14N60P
12-22-08-G
IXFC14N60P
14n60
T14n
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Untitled
Abstract: No abstract text available
Text: HiferFET F-Series HiPerFET™ Power MOSFETs with Fast Intrinsic Diode
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OCR Scan
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VUM 24-05N
Abstract: No abstract text available
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode Standard and MegaMOS FETs HDMOS II Eliminates Tradeoffs HiPerFET™ Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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OCR Scan
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24-05N
33-05N
VUM 24-05N
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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OCR Scan
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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depletion mode mosfet
Abstract: No abstract text available
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a
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OCR Scan
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ISOPLUS220TM
ISOPLUS220
depletion mode mosfet
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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OCR Scan
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 58N20Q ISOPLUS247™ Q Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr <200 ns Maximum Ratings Symbol Test Conditions
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OCR Scan
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58N20Q
ISOPLUS247TM
Cto150
247TM
00A/ns
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TL 650 ht
Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching
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4bfid22b
O-204
O-284
TL 650 ht
mbab
diode sy 166
ditti
IXFH26N50
MKL series
IXFN15N100
IXFMS0N20
IXFH12N100
IXFH5N100
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TO-238
Abstract: vdo 007 dss100v IXFN100N10 HiperFET 013Q
Text: X X 1ÖE D Y S CORP 4fc>öb22fc. G O G G b a S S □IXYS ADVANCE TECHNICAL DATA SHEET* December 1988 DATA SHEET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, HDMOS™ Family FEATURES:_ 100A
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b22fc.
1300C
O-238
-40to
IXFN100N10
O-238
TO-238
vdo 007
dss100v
IXFN100N10
HiperFET
013Q
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J9100
Abstract: J 9100 D 819
Text: □ IXYS HHifl JL æ * X HiPerFET Power MOSFETs IXFR 180N085 ISOPLUS247™ Electrically Isolated Back Surface V DSS = 85 V 180 A ^D25 RDS(on) = 7 mQ ” trr < 250 ns Single MOSFET Die Preliminary data sheet Symbol TestConditions Maximum Ratings V DSS
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OCR Scan
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180N085
ISOPLUS247â
T0-247AD
J9100
J 9100
D 819
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Untitled
Abstract: No abstract text available
Text: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions
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OCR Scan
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75N10Q
200ns
-247A
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR120N20 ISOPLUS247™ VDSS = 200 Electrically Isolated Back Surface Ro^on)= U V = 105 A 17 mQ trr < 250 ns Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V T, = 25°C to 150°C
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OCR Scan
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IXFR120N20
ISOPLUS247â
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR180N10 ISOPLUS247™ V,DSS = 100 V ^D25 = 165 A Electrically Isolated Back Surface R DS(on) = 8 mQ t rr < 250 n s Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V DSS v DGR
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OCR Scan
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IXFR180N10
ISOPLUS247â
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS
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OCR Scan
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4N100Q
-247A
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Untitled
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS 300 > vD0R Tj =25°Cto150°C T.J =25°Cto150°C; RrGS =1 M ft 300 > Vos
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IXFN130N30
Cto150
OT-227
E153432
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