FCX705
Abstract: FCX705TA
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
FCX705
FCX705TA
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marking 705
Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
marking 705
Zetex T 705
TRANSISTOR MARKING 705
FCX705
FCX705TA
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Untitled
Abstract: No abstract text available
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington
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UP1496
UP1496
100mA.
OT-23
UP1496G-AE3-R
QW-R206-095
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington
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UP1496
UP1496
100mA.
OT-23
UP1496L
UP1496G
UP1496-AE3-R
UP1496L-AE3-R
UP1496G-AE3-R
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transistor 3569
Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —
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Bandwi32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
transistor 3569
t4 3570 dpak
BU 508 transistor
BU108
BDW93C
ST T4 3580
transistor t4 3570
BU326
BU100
MJ*15033
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MJE4353 equivalent
Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —
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MJE4342
MJE4352
MJE4343
MJE4353
TIP73B
TIP74
MJE4353 equivalent
equivalent transistor K 3634
to220 amps 1200 v
BU108
SDT9207 "cross reference"
BU100
D45H11 cross reference
cross reference bd830
2SD1815 "cross reference"
2sd1815 cross reference
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2N5630,
2N6030
2N5631,
2N6031
2N5630
2N5631
2N5631 equivalent
2N5630 "cross-reference"
Chomerics
BU108
2SA1046
tip122 tip127 audio amp
BU326
BU100
2sd313 equivalent
NPN/TIP42C as regulator
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Untitled
Abstract: No abstract text available
Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE
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TIP110A
TIP110A
O-220
100mA
QW-R203-004
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high gain low voltage PNP transistor
Abstract: TIP110A
Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE
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TIP110A
TIP110A
O-220
100ms
QW-R203-004
high gain low voltage PNP transistor
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Zetex T 705
Abstract: No abstract text available
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
Zetex T 705
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BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDX66
BDX66A
BDX66B
BDX66C
BDX66C
BDX66B BDX66A BDX66
BDX66
BDX66B
C22B
BDX66A
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BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage
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BDX66
BDX66A
BDX66B
BDX66C
BDX66C
BDX66B BDX66A BDX66
BDX66B
BDX66
BDX66A
BDX 66 A
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229 transistor npn
Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
Text: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)
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OT223
750mA)
229 transistor npn
PNP avalanche transistor
high gain PNP RF TRANSISTOR
"dual TRANSISTORs" pnp npn
SM-8 BIPOLAR TRANSISTOR
darlington sot23 npn
transistor pnp 1a
high gain low voltage NPN transistor sot23
17 sot23
NPN TRANSISTORS LIST
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BC450
Abstract: No abstract text available
Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage
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BC450
BC450
300mA
625mW
300/iS,
100mA
Nov-97
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BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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MPSA92
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE2-MARCH 94_ FEATURES * High voltage APPLICATIONS * Telephone dialler circuits ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT VCBO -300 V Collector-Emitter Voltage
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-100nA,
-10MA,
300jis.
MPSA92
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NSG2556
Abstract: No abstract text available
Text: NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors MAXIMUM RATINGS Rating Collector-Emitter Voltage
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NSG2556
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ge133
Abstract: No abstract text available
Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector B ase Voltage VcBO -6 0 V Collector Emitter Voltage
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KSB1022
KSD1417
ge133
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spark killer
Abstract: No abstract text available
Text: O rdering num ber: EN 1831B LB 1205 N0.1831B Monolithic Digital IÇ High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes
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1831B
7097KI
6265KI
D203KI
LB1205
spark killer
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Untitled
Abstract: No abstract text available
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
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Untitled
Abstract: No abstract text available
Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol
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KSB1022
KSD1417
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6265K
Abstract: DIP16F LB1205
Text: Ordering num ber: EN 1 8 3 1 C Monolithic Digital 1C LB 1205 N0.1831C High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes
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1831C
LB1205
6265K
DIP16F
LB1205
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Untitled
Abstract: No abstract text available
Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Sym bol
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KSB1022
KSD1417
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