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    HIGH VOLTAGE PNP DARLINGTON Search Results

    HIGH VOLTAGE PNP DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE PNP DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCX705

    Abstract: FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


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    PDF FCX705 OT223 FCX705 FCX705TA

    marking 705

    Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


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    PDF FCX705 OT223 marking 705 Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA

    Untitled

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


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    PDF FCX705 OT223

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington


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    PDF UP1496 UP1496 100mA. OT-23 UP1496G-AE3-R QW-R206-095

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington


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    PDF UP1496 UP1496 100mA. OT-23 UP1496L UP1496G UP1496-AE3-R UP1496L-AE3-R UP1496G-AE3-R

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    MJE4353 equivalent

    Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —


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    PDF MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    Untitled

    Abstract: No abstract text available
    Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE


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    PDF TIP110A TIP110A O-220 100mA QW-R203-004

    high gain low voltage PNP transistor

    Abstract: TIP110A
    Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE


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    PDF TIP110A TIP110A O-220 100ms QW-R203-004 high gain low voltage PNP transistor

    Zetex T 705

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


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    PDF FCX705 OT223 Zetex T 705

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


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    PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage


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    PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A

    229 transistor npn

    Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
    Text: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)


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    PDF OT223 750mA) 229 transistor npn PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST

    BC450

    Abstract: No abstract text available
    Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


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    PDF BC450 BC450 300mA 625mW 300/iS, 100mA Nov-97

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


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    PDF

    MPSA92

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE2-MARCH 94_ FEATURES * High voltage APPLICATIONS * Telephone dialler circuits ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT VCBO -300 V Collector-Emitter Voltage


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    PDF -100nA, -10MA, 300jis. MPSA92

    NSG2556

    Abstract: No abstract text available
    Text: NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors MAXIMUM RATINGS Rating Collector-Emitter Voltage


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    PDF NSG2556

    ge133

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector B ase Voltage VcBO -6 0 V Collector Emitter Voltage


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    PDF KSB1022 KSD1417 ge133

    spark killer

    Abstract: No abstract text available
    Text: O rdering num ber: EN 1831B LB 1205 N0.1831B Monolithic Digital IÇ High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes


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    PDF 1831B 7097KI 6265KI D203KI LB1205 spark killer

    Untitled

    Abstract: No abstract text available
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION


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    PDF TIP142T TIP147T TIP142T O-220 TIP147T.

    Untitled

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol


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    PDF KSB1022 KSD1417

    6265K

    Abstract: DIP16F LB1205
    Text: Ordering num ber: EN 1 8 3 1 C Monolithic Digital 1C LB 1205 N0.1831C High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes


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    PDF 1831C LB1205 6265K DIP16F LB1205

    Untitled

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Sym bol


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    PDF KSB1022 KSD1417