ED-4701
Abstract: FLL21E045IY
Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,
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FLL21E045IY
40dBm
2170MHz
FLL21E045IY
ED-4701
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fet 547
Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm
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FA01219A
FA01219A
925MHz
fet 547
MA644
90 HYBRID 70 mhz rf power
acp 100k
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Untitled
Abstract: No abstract text available
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
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cly10
Abstract: CLY 10
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
CLY 10
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High Power GaAs FET
Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
Text: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for
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FLC317MG-4
FLC317MG-4
17Network
High Power GaAs FET
Fujitsu GaAs FET application note
C-111A
EIAJ ED-4701 111A
RM1101
fujitsu gaas fet
ED-4701
High voltage GaAs FET
FLC31
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41315
Abstract: 30424 45560
Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its
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Untitled
Abstract: No abstract text available
Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its
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45560
Abstract: No abstract text available
Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its
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MARKING CODE 8042
Abstract: MARKING 8042
Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its
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2 Watt S-Band Power Amplifier
Abstract: DC bias of gaas FET 300 watts amplifier s-band s-band 50 Watt power amplifier S-band mmic MMIC s-band 5 Watt S-Band Power Amplifier MIS us army MMIC s-band amplifier MMIC s-band attenuator
Text: HIGH VOLTAGE, LOW COST FETS FOR HPA MMIC APPLICATIONS M /A-COM is a longtime supplier to the military, Navy, Army and Air Force of GaAs MMICs, employed in active phased array radars. To date, the company’s GaAs process of choice has been its Multifunction Self-aligned Gate MSAG
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KGF1531
Abstract: 0948
Text: ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain,
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KGF1531
KGF1531
0948
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SHF-0289 App Note AN-032
Abstract: SHF-0289 an032 HFET
Text: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
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SHF-0289
31dBm
250mA.
SHF-0289
SHF-0x89
EDS-101241
SHF-0289 App Note AN-032
an032
HFET
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DC-12
Abstract: SHF-0198
Text: Product Description SHF-0198 Stanford Microdevices’ SHF-0198 series is a high performance AlGaAs/GaAs Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and
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SHF-0198
SHF-0198
DC-12
27dBm
150mA.
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PS7341C-1A
Abstract: PS7341CL-1A PS7341CL-1A-E3 PS7341CL-1A-E4
Text: DATA SHEET Solid State Relay OCMOS FET PS7341C-1A,PS7341CL-1A CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7341C-1A and PS7341CL-1A are solid state relays containing GaAs LEDs on the light emitting side input
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PS7341C-1A
PS7341CL-1A
PS7341CL-1A
PS7341CL-1A-E3
PS7341CL-1A-E4
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Untitled
Abstract: No abstract text available
Text: Preliminary GaAs IC 25 dB Voltage Variable Attenuator Single Positive Control 0.5–2.5 GHz AV104-12 Features SOIC-8 • Single Positive +5 V Control Voltage PIN 8 0.050 1.27 mm BSC ■ 25 dB Attenuation Range @ 0.9 GHz ■ High IP3 (20 dBm @ 0.9 GHz) 0.244 (6.20 mm)
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AV104-12
AV104-12
3/99A
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po111
Abstract: KGF1522 CB 0925
Text: ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The
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KGF1522
KGF1522
po111
CB 0925
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AS199-61
Abstract: No abstract text available
Text: Preliminary GaAs IC SP4T Non-Reflective Switch With Driver DC–2 GHz AS199-61 Features • Integrated Driver +5 V Supply Voltage LQFP-32 ■ High Isolation 50 dB @ 0.9 GHz 0.364 (9.25 mm) 0.344 (8.74 mm) SQ. ■ Low Insertion Loss (0.7 dB @ 0.9 GHz) 32
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AS199-61
LQFP-32
LQFP-32
AS199-61
11/01A
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PS7341-1B
Abstract: PS7341B-1B PS7341BL-1B PS7341L-1B
Text: PRELIMINARY DATA SHEET 6 PIN DIP LOW OUTPUT PS7341B-1B CAPACITANCE, LOW ON-STATE PS7341BL-1B RESISTANCE, SOLID STATE RELAY FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV = 3,750 Vr.m.s. The PS7341B-1B and PS7341BL-1B are solid state relays containing a GaAs LED on the light emitting side input side
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PS7341B-1B
PS7341BL-1B
PS7341B-1B
PS7341BL-1B
24-Hour
PS7341-1B
PS7341L-1B
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Untitled
Abstract: No abstract text available
Text: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V
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CMH0819
VQFN-24
142-j
CMH0819
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DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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Untitled
Abstract: No abstract text available
Text: NEC DATA SHEET PHOTOCOUPLER PS2621, PS2622, PS2621L, PS2622L HIGH ISOLATION VOLTAGE LARGE FORWARD INPUT TYPE 6 PIN PHOTOCOUPLER — NEPOC Series — DESCRIPTION P S2621, PS2622 and PS2621 L, PS2622L are optically coupled isolators containing a GaAs light em itting diode
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PS2621,
PS2622,
PS2621L,
PS2622L
S2621,
PS2622
PS2621
PS2622L
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nec fo 134
Abstract: B102F
Text: DATA SHEET PHOTOCOUPLERS PS2651, PS2652, PS2651L2, PS2652L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION P S2651, PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon photo transistor in a plastic DIP Dual In-line Package .
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PS2651,
PS2652,
PS2651L2,
PS2652L2
S2651,
PS2652
PS2651
PS2652L2
nec fo 134
B102F
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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Untitled
Abstract: No abstract text available
Text: i 2 S K 1236 N-Channei GaAs MES FET 12G H z-B and Local 0 sei 11a to r , A m pl i f |4 / c a tio n s _ J SAW O F No.3165 J p F e a tu re s •Ceramic package * Adoption of high reliable protection film A b so lu te M axim um R a tin g s a tT a = 25°C Drain to Source Voltage
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2SK1236
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