BYX13
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high
|
Original
|
PDF
|
M3D354
BYX133GL
BYX133GL
OD119AB
MAM420
SCA60
135106/00/01/pp4
BYX13
|
Electronic car ignition circuit
Abstract: car electronic ignition automotive ignition CAR IGNITION sod125 HIGH ENERGY IGNITION CIRCUIT ignition system BYX133GPL SCA73
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D473
BYX133GPL
SCA73
613510/02/pp8
Electronic car ignition circuit
car electronic ignition
automotive ignition
CAR IGNITION
sod125
HIGH ENERGY IGNITION CIRCUIT
ignition system
BYX133GPL
SCA73
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX134GPS High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPS FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D350
BYX134GPS
OD118A
SCA73
613510/02/pp8
|
automotive ignition
Abstract: CAR IGNITION Electronic car ignition circuit
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D473
BYX135GPL
SCA73
613510/02/pp8
automotive ignition
CAR IGNITION
Electronic car ignition circuit
|
Electronic car ignition circuit
Abstract: automotive ignition CAR IGNITION
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX132GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPL FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D473
BYX132GPL
SCA73
613510/02/pp8
Electronic car ignition circuit
automotive ignition
CAR IGNITION
|
diode Cathode indicated by blue band
Abstract: automotive ignition Electronic car ignition circuit
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D473
BYX134GPL
SCA73
613510/02/pp8
diode Cathode indicated by blue band
automotive ignition
Electronic car ignition circuit
|
BP317
Abstract: BYX133GPL MBL155
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
|
Original
|
PDF
|
M3D473
BYX133GPL
613510/01/pp8
BP317
BYX133GPL
MBL155
|
BP317
Abstract: BYX132GPL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX132GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
|
Original
|
PDF
|
M3D473
BYX132GPL
613510/01/pp8
BP317
BYX132GPL
|
BP317
Abstract: BYX134GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D458 BYX134GL High-voltage car ignition diode Product specification 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D458
BYX134GL
OD119AC
603502/01/pp4
BP317
BYX134GL
|
BP317
Abstract: BYX132GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D354
BYX132GL
OD119AB
135002/01/pp4
BP317
BYX132GL
|
BP317
Abstract: BYX134GPS 135-002
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX134GPS High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D350
BYX134GPS
OD118A
135002/01/pp8
BP317
BYX134GPS
135-002
|
BP317
Abstract: BYX134GPL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
|
Original
|
PDF
|
M3D473
BYX134GPL
613510/01/pp8
BP317
BYX134GPL
|
BYX133GPS
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX133GPS High-voltage car ignition diode Product specification 2002 Jan 24 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D350
BYX133GPS
OD118A
SCA74
613510/01/pp8
BYX133GPS
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D459 BYX135GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D459
BYX135GL
OD119AD
135002/01/pp4
|
|
|
BP317
Abstract: BYX135GPL SOD125
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
|
Original
|
PDF
|
M3D473
BYX135GPL
613510/01/pp8
BP317
BYX135GPL
SOD125
|
BYX135GPS
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX135GPS High-voltage car ignition diode Product specification 2002 Jan 24 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
|
Original
|
PDF
|
M3D350
BYX135GPS
OD118A
SCA74
613510/01/pp8
BYX135GPS
|
esjc
Abstract: diode SM N6040 esjc03-09
Text: E S J C 0 3 9 kv S ± 'J M fl^tSSs : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC 03», ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.
|
OCR Scan
|
PDF
|
ESJC03
ESJC03-09
esjc
diode SM
N6040
esjc03-09
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
|
OCR Scan
|
PDF
|
TVR30
UL94V
|
horizontal deflection system of crt
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 1 !> This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
|
OCR Scan
|
PDF
|
2500pF
horizontal deflection system of crt
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
|
OCR Scan
|
PDF
|
TVR-20
2500pF
UL94V
|
HP-214A
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
|
OCR Scan
|
PDF
|
TVR30
UL94V
HP-214A
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR 30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
|
OCR Scan
|
PDF
|
UL94V
|
ESJC01-12B
Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Text: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size
|
OCR Scan
|
PDF
|
ESJC01
ESJC01-09B
ESJC01-12B
ESJC01
ESJC0I-09B
ESX0I-09B
ESJC0I-098
IR 9515
a1t diode
|
b49 diode
Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Text: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size
|
OCR Scan
|
PDF
|
ESJC04
EaTS30S3
I95t/R89
Shl50
b49 diode
ESJC04-05
F151
T760
micro wave oven
esjc0405
|
