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    HIGH SPEED TRANSISTOR Search Results

    HIGH SPEED TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy

    HIGH SPEED TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPCA 8005

    Abstract: TOSHIBA 8005 transistor data transistor tpca 8005-h tpca-8005 TPCA8005-H
    Text: TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8005-H TENTATIVE High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching •


    Original     		PDF TPCA8005-H TPCA 8005 TOSHIBA 8005 transistor data transistor tpca 8005-h tpca-8005 TPCA8005-H

    PW-Mold

    Abstract: No abstract text available
    Text: TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A)


    Original     		PDF TTC012 PW-Mold

    44P0K

    Abstract: R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR
    Text: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0416D 256-kword 16-bit) REJ03C0107-0100Z 16-bit. R1RW0416D 400-mil 44-pin 44P0K R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR

    REJ03C0107-0200

    Abstract: R1RW0416DSB-2SR R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-0PR R1RW0416DSB-2LR R1RW0416DSB-2PR
    Text: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0200 Rev. 2.00 Dec.12.2008 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0416D 256-kword 16-bit) REJ03C0107-0200 16-bit. 400-mil 44-pin REJ03C0107-0200 R1RW0416DSB-2SR R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-0PR R1RW0416DSB-2LR R1RW0416DSB-2PR

    R1RW0408D

    Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
    Text: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0408D 512-kword REJ03C0111-0100Z R1RW0408D 400-mil 36-pin R1RW0408DGE-2LR R1RW0408DGE-2PR

    R1RW0408D

    Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
    Text: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0408D 512-kword REJ03C0111-0200 400-mil 36-pin R1RW0408DGE-2LR R1RW0408DGE-2PR

    32P0K

    Abstract: R1RW0404D R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge
    Text: R1RW0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0404D REJ03C0115-0100Z 400-mil 32-pin 32P0K R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge

    R1RP0408DGE-2PR

    Abstract: R1RP0408D R1RP0408DGE-2LR
    Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RP0408D 512-kword REJ03C0112-0100Z 512-k 400-mil 36-pin R1RP0408DGE-2PR R1RP0408DGE-2LR

    R1RP0408D

    Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR
    Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RP0408D 512-kword REJ03C0112-0200 512-k 400-mil 36-pin R1RP0408DGE-2LR R1RP0408DGE-2PR

    32P0K

    Abstract: R1RP0404D R1RP0404DGE-2LR R1RP0404DGE-2PR
    Text: R1RP0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF R1RP0404D REJ03C0116-0100Z 400-mil 32-pin 32P0K R1RP0404DGE-2LR R1RP0404DGE-2PR

    BR 8014

    Abstract: TPCA8014-H diode marking code YF
    Text: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TENTATIVE TPCA8014-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching Small gate charge: Qsw = 7.4 nC (typ.)


    Original     		PDF TPCA8014-H BR 8014 TPCA8014-H diode marking code YF

    R1RP0416DSB-2LR

    Abstract: R1RP0416DGE-2LR 44P0K R1RP0416D R1RP0416DGE-2PR R1RP0416DSB-2PR
    Text: R1RP0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0108-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RP0416D 256-kword 16-bit) REJ03C0108-0100Z 256-k 16-bit. 400-mil 44-pin R1RP0416DSB-2LR R1RP0416DGE-2LR 44P0K R1RP0416DGE-2PR R1RP0416DSB-2PR

    Untitled

    Abstract: No abstract text available
    Text: TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8004-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching


    Original     		PDF TPCA8004-H

    TPCA8003-H

    Abstract: No abstract text available
    Text: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 25 nC (typ.)


    Original     		PDF TPCA8003-H TPCA8003-H

    TPCM8001-H

    Abstract: No abstract text available
    Text: TENTATIVE + TPCM8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCM8001-H High Speed and High Efficiency DC-DC Converters Unit: mm 0.5 Notebook PC Applications Portable Equipment Applications 0.8 5 • High speed switching


    Original     		PDF TPCM8001-H TPCM8001-H

    HM621400HC

    Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199 400-mil 32-pin HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358

    HM62W8511HI

    Abstract: HM62W8511HJPI HM62W8511HJPI-15 512KWORD Hitachi DSA0044
    Text: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W8511HI 512-kword ADE-203-1036A 400mil 36-pin HM62W8511HJPI HM62W8511HJPI-15 512KWORD Hitachi DSA0044

    HM62W16255HI

    Abstract: HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044
    Text: HM62W16255HI Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1038A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    Original     		PDF HM62W16255HI 256-kword 16-bit) ADE-203-1038A 16-bit. 400mil 44-pin 400-mil HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044

    HM624100HC

    Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
    Text: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM624100HC ADE-203-1198B 400-mil 32-pin D-85622 D-85619 HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316

    HM62W8511H

    Abstract: HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00200
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-750D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W8511H 512-kword ADE-203-750D 400-mil 36-pin HM62W8511H-10 HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00200

    HM621400H

    Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit


    Original     		PDF HM621400H ADE-203-787D 400-mil 32-pin HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197

    HM62W4100H

    Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W4100H ADE-203-774D 400-mil 32-pin HM62W4100H-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200

    NTE2382

    Abstract: No abstract text available
    Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL


    OCR Scan     		PDF T0220 150ns, 350ns, 110ns, 160ns NTE2382

    2SC3736

    Abstract: 2SA1460 IEI-1213 MEI-1202 MF-1134 nec marking power amplifier marking HFF
    Text: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3736 is designed for power amplifier and high speed switching applications. in millim eters FEATURES • High speed, high voltage switching.


    OCR Scan     		PDF