880nm
Abstract: OD-880-C
Text: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING
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OD-880-C
880nm
100mA
100mA
190mW
OD-880-C
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OD-880-C
Abstract: 880nm
Text: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING
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OD-880-C
880nm
100mA
190mW
OD-880-C
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OD-148-C
Abstract: OD-24X24-C OD-880-C ir-led
Text: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING
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OD-880-C
880nm
100mA
400mW
200mA
OD-148-C
OD-24X24-C
OD-880-C
ir-led
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Untitled
Abstract: No abstract text available
Text: 2014-02-05 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity
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D-93055
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING
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OD-880-C
880nm
100mA
190mW
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Untitled
Abstract: No abstract text available
Text: 2014-01-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4341 Features: • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 11° High radiant intensity
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OS-PCN-2009-021-A2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2012-03-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 acc. to OS-PCN-2009-021-A2 SFH 4341 Features: • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 11° High radiant intensity
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-01-16 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity
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OS-PCN-2009-021-A2
D-93055
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MA103
Abstract: IR LED 800 nm
Text: 2012-12-03 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 acc. to OS-PCN-2009-021-A2 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
D-93055
MA103
IR LED 800 nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 20mW typical of power and 13mW/sr of radiant intensity.
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SMT940D
SMT940D
13mW/sr
940nm.
350um
940nm
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Untitled
Abstract: No abstract text available
Text: 2014-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / gemäß: OS-PCN-2009-021-A2 SFH 4350 Features: • • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 13° Very high radiant intensity
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OS-PCN-2009-021-A2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2012-05-21 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 / gemäß: OS-PCN-2009-021-A2 SFH 4350 Features: • • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 13° Very high radiant intensity
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
D-93055
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED TOP IR LED SMTQ810N Lead Pb Free Product – RoHS Compliant SMTQ810N High Performance Infrared TOP IR LED SMTQ810N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power and 20mW/sr of radiant Intensity.
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SMTQ810N
SMTQ810N
20mW/sr
810nm.
810nm
72-hour-
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SMT810N
Abstract: 810nm
Text: epitex Opto-Device & Custom LED TOP IR LED SMT810N Lead Pb Free Product – RoHS Compliant SMT810N High Performance Infrared TOP IR LED SMT810N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power and 20mW/sr of radiant Intensity.
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SMT810N
SMT810N
20mW/sr
810nm.
810nm
72-hour-
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 20mW typical of power and 13mW/sr of radiant intensity.
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PDF
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SMT940D
SMT940D
13mW/sr
940nm.
350um
940nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 20mW typical of power and 13mW/sr of radiant intensity.
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SMT940D
SMT940D
13mW/sr
940nm.
350um
940nm
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SMT850D-23
Abstract: 850nm
Text: epitex Opto-Device & Custom LED SMT850D-23 TOP IR LED SMT850D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT850D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.
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SMT850D-23
SMT850D-23
60mW/sr
850nm.
350um
850nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED SMT940D-23 TOP IR LED SMT940D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT940D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.
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Original
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PDF
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SMT940D-23
SMT940D-23
60mW/sr
940nm.
350um
940nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED SMT940D-23 TOP IR LED SMT940D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT940D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.
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SMT940D-23
SMT940D-23
60mW/sr
940nm.
350um
940nm
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Untitled
Abstract: No abstract text available
Text: OD-11X11-C HIGH-POWER GaAIAs IR EMITTER CHIPS FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission • Good ohmic contacts gold alloys • Provides power output below 1mA
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OCR Scan
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OD-11X11-C
880nm
OD-11X11-C
88O-C.
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Untitled
Abstract: No abstract text available
Text: OD-88O-C HIGH-POWER GaAIAs IR EMITTER CHIPS FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014 • 880nm peak emission • Good ohmic contacts gold alloys EMITTING SURFACE • Custom chips available
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880nm
OD-88O-C
OD-88O-C
OD-880-C
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OD-11X11-C
Abstract: Opto Diode 11X11
Text: 5 SE t> OPTO DIODE CORP m bflom a ooooiai 120 mopi> T - n t - 13 HIGH-POWER GaAIAs IR EMITTER CHIPS .011 OD-11X11-C FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .011 • 880nm peak emission
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OD-11X11-C
880nm
OD-11X11
OD-88O-C.
100Hz
OD-11X11-C
Opto Diode
11X11
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAIAs IR EMITTER CHIPS OD-880-C FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission • Good ohmic contacts gold alloys • Good bondability All dimensions are nominal values in inches unless
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OD-880-C
880nm
100mA
190mW
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Untitled
Abstract: No abstract text available
Text: OPTO D I OD E CORP SSE D • böG m ä GODOIMI fifib H O P D T ^ v l - OD-88O-C HIGH-POWER GaAIAs IR EMITTER CHIPS -.0 1 4 - FEATURES o EMITTING • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014
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OD-88O-C
880nm
OD-88O-C
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