Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH POWER SWITCHING TRANSISTOR 2SC Search Results

    HIGH POWER SWITCHING TRANSISTOR 2SC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER SWITCHING TRANSISTOR 2SC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4551

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4551 2SC4551

    2SC4550

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4550 2SC4550

    NEC 2sc4552

    Abstract: 2SC4552
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4552 2SC4552 NEC 2sc4552

    2SC2334

    Abstract: nec 2Sa1010 Contact Electronics electronics data book 2SA1010 nec transistor
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.


    Original     		PDF 2SC2334 2SC2334 O-220AB O-220AB) 2SA1010 nec 2Sa1010 Contact Electronics electronics data book 2SA1010 nec transistor

    D1490

    Abstract: 2SC2334 2SA1010
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2334 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching


    Original     		PDF 2SC2334 2SC2334 O-220AB O-220AB) 2SA1010 D1490 2SA1010

    2SC3569

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as


    Original     		PDF 2SC3569 2SC3569

    2SC3570

    Abstract: D1618
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as


    Original     		PDF 2SC3570 2SC3570 D1618

    2Sc2335

    Abstract: transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such


    Original     		PDF 2SC2335 2SC2335 O-220AB O-220AB) transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor

    2SC4815

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SC4815 2SC4815

    2SC4813

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SC4813 2SC4813

    d1708

    Abstract: 2SC4346 2SC4346-Z
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3


    Original     		PDF 2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 d1708 2SC4346-Z

    d1708

    Abstract: 2SC4346 2SC4346-Z NEC PART NUMBER MARKING
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3


    Original     		PDF 2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 d1708 2SC4346-Z NEC PART NUMBER MARKING

    2sc4346

    Abstract: 2SC4346-Z
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3


    Original     		PDF 2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 2SC4346-Z

    2SC4336

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4336 is a mold power transistor developed for high- 10.5 MAX. speed switching and features a very low collector-to-emitter


    Original     		PDF 2SC4336 2SC4336

    2sa1008 nec

    Abstract: 2SA1008 2SC2331
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.


    Original     		PDF 2SA1008 2SA1008 O-220AB O-220AB) 2SC2331 2sa1008 nec 2SC2331

    Untitled

    Abstract: No abstract text available
    Text: 2SC2768 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers


    Original     		PDF 2SC2768 O-220AB O-220AB SC-46

    transistor Ic 1A

    Abstract: No abstract text available
    Text: 2SC2768 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers


    Original     		PDF 2SC2768 O-220AB SC-46 transistor Ic 1A

    2SC3030

    Abstract: high speed inverters High Current Switching Applications transistor SC-65 UItraSO
    Text: 2SC3030 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Uitrasonic generators High frequency inverters


    Original     		PDF 2SC3030 SC-65 2SC3030 high speed inverters High Current Switching Applications transistor SC-65 UItraSO

    2sc3030

    Abstract: TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH HIGH CURRENT HIGH SPEED SWITCHING TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED
    Text: 2SC3030 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Uitrasonic generators High frequency inverters


    Original     		PDF 2SC3030 SC-65 2sc3030 TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH HIGH CURRENT HIGH SPEED SWITCHING TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED

    D1486

    Abstract: 2SC4342
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		PDF 2SC4342 2SC4342 O-126 D1486

    2SA1010

    Abstract: nec 2sa1010 2SC2334
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use as a driver in


    Original     		PDF 2SA1010 2SA1010 2SC2334 nec 2sa1010 2SC2334

    2SC4553

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a


    Original     		PDF 2SC4553 2SC4553

    D1714

    Abstract: marking ok 2SA1460 2SC3736
    Text: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC3736 is designed for power amplifier and high speed 4.5 ±0.1 switching applications. 1.6 ±0.2 1.5 ±0.1


    Original     		PDF 2SC3736 2SC3736 2SA1460 D1714 marking ok

    2SC3736

    Abstract: 2SA1460 IEI-1213 MEI-1202 MF-1134 nec marking power amplifier marking HFF
    Text: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3736 is designed for power amplifier and high speed switching applications. in millim eters FEATURES • High speed, high voltage switching.


    OCR Scan     		PDF