Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer
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UF640-P
18OHM,
UF640-P
O-220
QW-R502-A17
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
18OHM,
UF640
QW-R502-066
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uf640
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
18OHM,
UF640
QW-R502-066
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640V
18OHM,
UF640V
QW-R502-916,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
18OHM,
UF640
QW-R502-066
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N05 Power MOSFET 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT30N05
UTT30N05
UTT30N05L-TN3-R
UTT30N05G-TN3-R
QW-R502-660
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT36N05
UTT36N05
UTT36N05L-TA3-T
UTT36N05G-TA3-T
QW-R502-654
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N05 Power MOSFET 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N05
UTT60N05
UTT60N05L-TA3-T
UTT60N05G-TA3-T
QW-R502-662
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N10
UTT60N10
UTT60N10L-TA3-T
UTT60N10G-TA3-T
QW-R502-664
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N10
UTT60N10
UTT60N10L-TA3-T
UTT60N10G-TA3-T
UTT60N10L-TN3-T
QW-R502-664
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50N05 Power MOSFET 50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT50N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT50N05
UTT50N05
UTT50N05L-TN3-R
UTT50N05G-TN3-R
QW-R502-663
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
O-252
O-263
UF640
O-220
O-220F
O-220F2
QW-R502-066
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power window motor 12v
Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Text: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping
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STB50NE10
STGD3NB60SD
STB9NB50
O-220
STP80NE03L-06
STB80o
STB80NF55L-06
OT-223
PowerSO-10TM
O-220
power window motor 12v
wiper motor 12v dc
PWM generator for IGBT
12v dc driver motor control mosfet
ELECTRONIC BALLAST 12v
window lift motor
rain sensor
"rain sensor"
12v dc motor igbt control
motor power window hall sensor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET High Power Gain Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512
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IDM30512CW100
IDM30512CW100
30-512MHz
400MHz.
2x100mA
IDM30512CW100-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW120 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW120 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW120
IDM500CW120
2x100mA
200mA
1ms-10%
D3913-6-10
IDM500CW120-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW300
IDM500CW300
2x100mA
IDM500CW300-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW200
IDM500CW200
2x100mA
IDM500CW200-REV-NC-DS-REV-C
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REG IC 48V IN 12V 10A OUT
Abstract: 48vdc smps circuit diagram 48V SMPS smps 48v 12v circuit diagram of mosfet based smps power supply 48V SMPS circuit REG IC 48V 40A 48V 10A SMPS circuit diagram REG IC 48V 5V 18V 10A OUT REG IC 48V IN 12V 10A OUT ic
Text: ISL6144 Data Sheet February 2004 FN9131 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
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ISL6144
FN9131
ISL6144
REG IC 48V IN 12V 10A OUT
48vdc smps circuit diagram
48V SMPS
smps 48v 12v
circuit diagram of mosfet based smps power supply
48V SMPS circuit
REG IC 48V 40A
48V 10A SMPS circuit diagram
REG IC 48V 5V 18V 10A OUT
REG IC 48V IN 12V 10A OUT ic
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48V SMPS
Abstract: smps 10w 5V ISL6144 ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ
Text: ISL6144 Data Sheet March 23, 2006 FN9131.1 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
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ISL6144
FN9131
ISL6144
48V SMPS
smps 10w 5V
ISL6144IR
ISL6144IV
ISL6144IVZA
MO-220
48vdc smps circuit diagram
48v smps led driver
ISL6144IVZ
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TL494
Abstract: TC429
Text: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output
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TC429
75nsec
35nsec
2500pF
TL494
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circuit diagram of 24V 20A SMPS
Abstract: Charge Pumps
Text: ISL6144 Data Sheet December 15, 2006 FN9131.2 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
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ISL6144
FN9131
ISL6144
circuit diagram of 24V 20A SMPS
Charge Pumps
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PN channel MOSFET 10A
Abstract: UK2996L-TA3-T C5520 UK2996 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay
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UK2996
O-220
UK2996
O-220F
UK2996L
UK2996-TA3-T
UK2996L-TA3-T
UK2996-TF3-T
UK2996L-TF3-T
QW-R502-063
PN channel MOSFET 10A
UK2996L-TA3-T
C5520
UK2996-TA3-T
UK2996-TF3-T
n-CHANNEL POWER MOSFET 600v
MOSFET 25A 600V
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TQ2 rohs
Abstract: UF640 UF640L TO-220 UF640L-TA3-T UF640-TA3-T UF640-TF3-T UF640L UF640G P-n diode to 263
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
UF640
UF640L
UF640G
QW-R502-066
TQ2 rohs
UF640L TO-220
UF640L-TA3-T
UF640-TA3-T
UF640-TF3-T
UF640L
UF640G
P-n diode to 263
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device
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MRF185
MRF185
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