IL062
Abstract: IL062N TL062C IL062D il0621
Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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IL062
IL062
012AA)
IL062N
TL062C
IL062D
il0621
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il0621
Abstract: IL062 TL062C IL062N IL062D
Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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IL062
IL062
012AA)
il0621
TL062C
IL062N
IL062D
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transistor c237
Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
transistor c237
capacitor 471
c221 capacitor
TRANSISTOR c104
C103 c104
c804
TL227
c221 TRANSISTOR
C11256
B0828
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PTFB210801
Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz
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PTFB210801FA
PTFB210801FA
H-37265-2
PTFB210801
NFM18PS105R0J3D
TRANSISTOR tl131
tl117
C210
TL127
490-4393-2-ND
tl-101-2
800A150GT
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Untitled
Abstract: No abstract text available
Text: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz
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PTFA181001GL
PTFA181001GL
100-watt
PG-63248-2
PTFA181001HL
PG-64248-2
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TL235
Abstract: ATC100B301JW200X
Text: PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
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PTVA030121EA
PTVA030121EA
H-36265-2
90ances.
TL235
ATC100B301JW200X
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transistor TL131
Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
H-34288G-4/2
transistor TL131
TL231
tl127
TL130
tl131
transistor tl120
8C802
tl-130
LM78L05ACMND
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TL235
Abstract: No abstract text available
Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency
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PTVA030121EA
PTVA030121EA
H-36265-2
TL235
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LM7805ACH-ND
Abstract: TL174 tl173 PTVA035002EV V1
Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features
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PTVA035002EV
PTVA035002EV
H-36275-4
a035002
50stances.
LM7805ACH-ND
TL174
tl173
PTVA035002EV V1
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C109 ceramic capacitor
Abstract: TL235
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
H-34275G-6/2
C109 ceramic capacitor
TL235
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PTFB212507SH
Abstract: No abstract text available
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
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ATC100B6R2CT500X
Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
PTFB213208FV
H-34275G-6/2
ATC100B6R2CT500X
TL230
TL235
TL156
TL247
C20210
ATC100B100FW500X
TL140
TL251
TL126
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TL235
Abstract: tl241 TL234 TL240 PTVA030121EA bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807
Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency
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PTVA030121EA
PTVA030121EA
H-36265-2
TL235
tl241
TL234
TL240
bd 302 transistor
TL205
TL2082
ATC100B9R1BW500XB
R807
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TL061
Abstract: TL061I TL061C TL061IN TL061M TL061A TL061B
Text: TL061 TL061A - TL061B LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW POWER CONSUMPTION : 200µA WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT
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TL061
TL061A
TL061B
TL061,
TL061B
TL061
TL061I
TL061C
TL061IN
TL061M
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2SK1814
Abstract: 86J Amplifier suis
Text: 2SK1814 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-III SERIES I Features Outline Drawings High current _ow no-resistance Mo secondary breakdown _ow driving power High forward Transconductance I Applications Vlotor controllers 3enaral purpose power amplifier
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2SK1814
O-22QAB
SC-46
eSTS30
2SK1814
86J Amplifier
suis
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cree MOS
Abstract: 2SK1387-MR T151 a2197
Text: 2SK1387-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES Outline Drawings I Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier
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2SK1387-MR
SC-67
Tc-25Â
cree MOS
T151
a2197
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A2140
Abstract: SK1089 ha 7681 T151
Text: 2SK1089 FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET F-III SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier
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SK1089
SC-67
A2140
SK1089
ha 7681
T151
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2SK1506
Abstract: SC-65 A2216 2SK1506 equivalent
Text: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier
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2SK1506
SC-65
VOS-10V
A2-216
2SK1506
SC-65
A2216
2SK1506 equivalent
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2SK1086-MR
Abstract: T151
Text: ÏSK1086-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III S E R IE S Outline Drawings I Features High current Low on-resistance I Jo secondary breakdown l ow driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier
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SK1086-MR
SC-67
2SK1086-MR
T151
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pj 899 diode
Abstract: 2SK899 pj 899 SC-65 T151
Text: 2SK899 FUJI POW ER MOS^FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings I Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage •Applications Switching regulators U PS 1DC-DC converters 'General purpose power amplifier
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2SK899
SC-65
Tc-25
pj 899 diode
2SK899
pj 899
SC-65
T151
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C 5388
Abstract: TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S
Text: 2SK1506 FUJI POWER MOS-FET U-CHANNEL SILICON POWER MOS-FET F-III SERIES • Features Outline Drawings "»High current <i*Low no-resistance «»Low driving power #High forward Transconductance III Applications •>Motor controllers ■«»Genaral purpose power amplifier
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2SK1506
SC-65
C 5388
TFK U 216 B
2SK1506
TFK 03 Diode
SC-65
diode s .* tfk
TFK S
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OAAI
Abstract: A2140
Text: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier
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2SK1089
OAAI
A2140
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A2265
Abstract: 2SK1881-L A2-265 a/A2265-12/12
Text: 2SK1881-L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III I Features S E R I E S O utline D raw ings High current Low on-resistance No secondary breakdown Low driving power High forw ard Transconductance I Applications M otor controllers General purpose power amplifier
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2SK1881-L.
A2265
2SK1881-L
A2-265
a/A2265-12/12
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A2248
Abstract: 2SK1817-MR
Text: »SK1817-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES I Featu res Outline Drawings H ig h current I I ow no-resistance 1rJo secondary breakdown Low driving power High forw ard Transconductance I Applications Motor controllers îenaral purpose power amplifier
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2SK1817-MR
SC-67
A2248
2SK1817-MR
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