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    HIGH POWER AMPLIFIER 100MHZ Search Results

    HIGH POWER AMPLIFIER 100MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER AMPLIFIER 100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sanyo audio amplifier

    Abstract: a671hn DIP28H LA4919N Sanyo pre amplifier sanyo capacitor 1000uf 6.3V BTL POWER AMPLIFIER 2-channel block diagram headphone
    Text: Ordering number : ENA0323 Monolithic Linear IC LA4919N Two-Channel 10W BTL High-Efficiency TV Audio Output Power Amplifier Overview The LA4919N is a 2-channel 10W BTL high-efficiency power amplifier. By using a signal following switching system for the power supply to the amplifier output stage and by including a nonlinear amplifier in the signal system, the LA4919N


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    PDF ENA0323 LA4919N LA4919N DIP-28H A0323-6/6 Sanyo audio amplifier a671hn DIP28H Sanyo pre amplifier sanyo capacitor 1000uf 6.3V BTL POWER AMPLIFIER 2-channel block diagram headphone

    sanyo capacitor 1000uf 6.3V

    Abstract: block diagram headphone Sanyo audio amplifier
    Text: Ordering number : ENA0323 Monolithic Linear IC LA4919N Two-Channel 10W BTL High-Efficiency TV Audio Output Power Amplifier Overview The LA4919N is a 2-channel 10W BTL high-efficiency power amplifier. By using a signal following switching system for the power supply to the amplifier output stage and by including a nonlinear amplifier in the signal system, the LA4919N


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    PDF ENA0323 LA4919N LA4919N DIP-28H A0323-6/6 sanyo capacitor 1000uf 6.3V block diagram headphone Sanyo audio amplifier

    2SA1815

    Abstract: 2SC4432 ITR04747 ITR04748
    Text: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.


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    PDF ENN4625 2SA1815 100MHz) 750MHz 2SC4432. 2018B 2SA1815] 2SA1815 2SC4432 ITR04747 ITR04748

    EN4625

    Abstract: transistor 2sA1815 2SA1815 2SC4432
    Text: Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.


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    PDF EN4625 2SA1815 100MHz) 750MHz 2SC4432. 2SA1815] EN4625 transistor 2sA1815 2SA1815 2SC4432

    EN4644

    Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
    Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.


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    PDF EN4644 2SA1857 100MHz) 750MHz 2SC4400. 2SA1857] EN4644 2SA1857 2SC4400 MarKING JS 46441 AX SANYO

    EN4644

    Abstract: 2SA1857 2SC4400 marking 7T transistor
    Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.


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    PDF EN4644 2SA1857 100MHz) 750MHz 2SC4400. 2SA1857] EN4644 2SA1857 2SC4400 marking 7T transistor

    Untitled

    Abstract: No abstract text available
    Text: CLC450 CLC450 Single Supply, Low Power, High Output, Current Feedback Amplifier Literature Number: SNOS840B CLC450 Single Supply, Low Power, High Output, Current Feedback Amplifier General Description The CLC450 has a new output stage that delivers high output drive current 100mA , but consumes minimal


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    PDF CLC450 CLC450 SNOS840B 100mA)

    RH1814

    Abstract: No abstract text available
    Text: RH1814M Quad 3mA, 100MHz, 750V/µs Operational Amplifier DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1814 is a quad, low power, high speed, very high slew rate operational amplifier with excellent DC performance, reduced supply current, lower input offset voltage, lower


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    PDF RH1814M 100MHz, RH1814 1000pF Line000 1814mfb

    A0322

    Abstract: HSOP28H LA4917H self oscillation btl 5 pin 12V din wiring diagram sanyo 1000uf, 63v DIP28H
    Text: Ordering number : ENA0322 Monolithic Linear IC LA4917H Audio Output for TV application High-Effciency Two-Channel 7W BTL Power Amplifier ICs Overview The LA4917H is a high-effciency two-channel 7W BTL power amplifier IC. Increases in the number of external


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    PDF ENA0322 LA4917H LA4917H DIP-28H A0322-8/8 A0322 HSOP28H self oscillation btl 5 pin 12V din wiring diagram sanyo 1000uf, 63v DIP28H

    HSOP28H

    Abstract: LA4917H
    Text: Ordering number : ENA0322 Monolithic Linear IC LA4917H Audio Output for TV application High-Effciency Two-Channel 7W BTL Power Amplifier ICs Overview The LA4917H is a high-effciency two-channel 7W BTL power amplifier IC. Increases in the number of external


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    PDF ENA0322 LA4917H LA4917H DIP-28H A0322-8/8 HSOP28H

    CLC5801

    Abstract: No abstract text available
    Text: High-Speed Amplifier Products Selection Guide July 2001 National Semiconductor sets new standard for high- speed, low-power and great support. High-Speed Amplifier Solutions National's high-speed amplifiers offer solutions for: • Radar applications – Ultra High Bandwidth 1.1GHz


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    PDF 05nV/Hz 150mA 24VPP 200mA 250MHz OT-23, CLC5801

    MULTIPLEXER IC

    Abstract: CLC410 HA-5020 HFA1109 HFA1145 HFA1149 HFA1149IB HFA11XXEVAL
    Text: HFA1149 TM Data Sheet June 2000 450MHz, Low Power, Video Operational Amplifier with Programmable Output Disable The HFA1149 is a high speed, low power, current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process. This amplifier features a unique


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    PDF HFA1149 450MHz, HFA1149 12ns/20ns) MULTIPLEXER IC CLC410 HA-5020 HFA1109 HFA1145 HFA1149IB HFA11XXEVAL

    CLC730029

    Abstract: CLC730013 CLC730024 CLC730027 CLC730031 CLC730036
    Text: High-Speed Amplifier Products Selection Guide June 2001 National Semiconductor sets new standard for high- speed, low-power and great support. High-Speed Amplifier Solutions National's high-speed amplifiers offer solutions for: • Radar applications – Ultra High Bandwidth 1.1GHz


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    PDF 05nV/Hz 150mA 24VPP 260mA 250MHz CLC730029 CLC730013 CLC730024 CLC730027 CLC730031 CLC730036

    Ksc1674

    Abstract: No abstract text available
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic


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    PDF KSC1674 600MHz 100MHz Ksc1674

    RF POWER TRANSISTOR 100MHz

    Abstract: NPN Epitaxial Silicon Transistor silicon transistor KSC2786 high Power Amplifier 100mhz Transistor FT TO NPN 4V 5mA
    Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product f T=600MHz Typ • High Power Gain GPE=22dB at f=100MHz  ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic


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    PDF KSC2786 O-92S 600MHz 100MHz RF POWER TRANSISTOR 100MHz NPN Epitaxial Silicon Transistor silicon transistor KSC2786 high Power Amplifier 100mhz Transistor FT TO NPN 4V 5mA

    CLC414

    Abstract: CLC415 HA5025 HA5025EVAL HFA1405 HFA1405IB HFA1405IP
    Text: HFA1405 September 1998 File Number 3604.5 Quad, 560MHz, Low Power, Video Operational Amplifier Features The HFA1405 is a quad, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process. • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ


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    PDF HFA1405 560MHz, HFA1405 560MHz CLC414 CLC415 HA5025 HA5025EVAL HFA1405IB HFA1405IP

    LT1351

    Abstract: LT1365 LT1812 LT1812CS8 LT1812IS8 LT1813 TM 1812
    Text: LT1812 3mA, 100MHz, 750V/µs Operational Amplifier with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1812 is a low power, high speed, very high slew rate operational amplifier with excellent DC performance.


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    PDF LT1812 100MHz, LT1812 100MHz Unity-364/LT1365 70MHz, LT1395/LT1396/LT1397 400MHz LT1398/LT1399 300MHz LT1351 LT1365 LT1812CS8 LT1812IS8 LT1813 TM 1812

    transistor revers characteristic

    Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol


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    PDF KSC1674 600MHz 100MHz D0S474t, E22KO transistor revers characteristic NF005 KSC1674 QDS4744 TRANSISTOR 100MHz

    21g transistor

    Abstract: 2SA1306B
    Text: TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz (Typ.) . Complementary to 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    PDF 2SA1306B 100MHz 2SC3298B 2SA1306B 2SA1306B1 -160V, -10mA, -100mA -500mA, 21g transistor

    Untitled

    Abstract: No abstract text available
    Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


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    PDF KSC2786 600MHz 100MHz 100MHz 0D24fll5

    Untitled

    Abstract: No abstract text available
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic


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    PDF KSC1674 600MHz 100MHz 100MHz

    transistor 2sa968b

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    PDF ZSA96 100MHz 2SC2238B 2SA968B 2SA968B -55VL50 transistor 2sa968b

    2sc3298

    Abstract: 2SA1306 2SC3298 3298B 2SC3298A 2sa1306
    Text: 2SC3298,3298A,3298B SUCON NPNEPTAXAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 1 0 . 3 MAX. FEATURES: . High Transition Frequency : fT~100MHz Typ. . Complementary to 2SA1306, 2SA1306A, 2SA1306B MAXIMUM RATINGS CHARACTERISTIC


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    PDF 2SC3298 3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298 3298B 2sa1306

    2SC1674

    Abstract: No abstract text available
    Text: Transistors 2SC1674 USHA INDIA LTD TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain-Bandwidth Product fT=600MHz (Typ) • High Power Gain Gpe=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


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    PDF 2SC1674 600MHz 100MHz 10iiA, 109MHz 2SC1674