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    HIGH FREQUENCY HIGH POWER TRANSISTOR 300MHZ BJT N Search Results

    HIGH FREQUENCY HIGH POWER TRANSISTOR 300MHZ BJT N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    HIGH FREQUENCY HIGH POWER TRANSISTOR 300MHZ BJT N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaN Amplifier 20GHz

    Abstract: No abstract text available
    Text: RF3315 Proposed BROADBAND HIGH LINEARITY AMPLIFIER Typical Applications • Basestation Applications • WLL, W-CDMA Systems • Cellular and PCS Systems • Final PA for Low-Power Applications GENERAL PURPOSE AMPLIFIERS 4 Product Description The RF3315 is a high-efficiency GaAs Heterojunction


    Original     		PDF RF3315 RF3315 300MHz 23dBm RF3315PCBA-410 RF3315PCBA-411 900MHz) GaN Amplifier 20GHz

    high frequency high power transistor 300mhz bjt n

    Abstract: RF2318
    Text: RF2318 LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations • Broadband Gain Blocks E S 0.196 0.189 W N E 8° MAX 0° MIN ! GaAs HBT SiGe HBT InGaP/HBT GaN HEMT 0.034 0.016 0.009


    Original     		PDF RF2318 5000MHz high frequency high power transistor 300mhz bjt n RF2318

    RFHA1006

    Abstract: 0906-4K LQG11A47NJ00
    Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1006 225MHz 1215MHz, RFHA1006 1215MHz DS120418 0906-4K LQG11A47NJ00

    Untitled

    Abstract: No abstract text available
    Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1006 225MHz 1215MHz, 1215MHz DS120418

    Untitled

    Abstract: No abstract text available
    Text: RF2312 LI N EAR GEN ERAL PU RPOSE AM PLI FI ER RoHS Compliant & Pb-Free Product Typic a l Applic at ions • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Produc t De sc ript ion


    Original     		PDF RF2312 RF2312 1000MHz, 001GHz

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216

    Gan hemt transistor RFMD

    Abstract: DS111007 tl 4941
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS111007 Gan hemt transistor RFMD DS111007 tl 4941

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, 512MHz DS120216

    rfha1003

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 512MHz, RFHA1003 30MHz 512MHz DS120102

    RFHA1003SQ

    Abstract: 30MHz to 512MHz
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216 RFHA1003SQ 30MHz to 512MHz

    Untitled

    Abstract: No abstract text available
    Text: RF2311                • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers    


    Original     		PDF RF2311 RF2311 1600MHz.

    SMAJ26

    Abstract: P13PC
    Text: RF2310              • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers 


    Original     		PDF RF2310 RF2310 2500MHz. SMAJ26 P13PC

    RF2311

    Abstract: No abstract text available
    Text: RF2311 4 GENERAL PURPOSE AMPLIFIER Typical Applications • General Purpose High Bandwidth Gain Blocks • Broadband Test Equipment • Final PA for Medium Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description


    Original     		PDF RF2311 RF2311 1600MHz.

    RC30 resistor

    Abstract: No abstract text available
    Text: RF2312              • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity


    Original     		PDF RF2312 RF2312 1000MHz, 2500MHz. 001GHz RC30 resistor

    4558 schematic diagram

    Abstract: No abstract text available
    Text: RF3305 Preliminary BROADBAND HIGH LINEARITY AMPLIFIER Typical Applications • Basestation Applications • WLL, W-CDMA Systems • Cellular and PCS Systems • Final PA for Low-Power Applications Product Description 0.05 C The RF3305 is a high-efficiency GaAs Heterojunction


    Original     		PDF RF3305 RF3305 300MHz 203mm 330mm 025mm 4558 schematic diagram

    cable tv amplifier

    Abstract: catv amplifier RF POWER TRANSISTOR 100MHz RF POWER TRANSISTOR 30MHz RF2318
    Text: RF2318 Preliminary 3 LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations • Broadband Gain Blocks 3 The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured


    Original     		PDF RF2318 RF2318 1000MHz, 5000MHz. cable tv amplifier catv amplifier RF POWER TRANSISTOR 100MHz RF POWER TRANSISTOR 30MHz

    Untitled

    Abstract: No abstract text available
    Text: RF2318 Preliminary 3 LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations 3 Product Description -A- The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured


    Original     		PDF RF2318 RF2318 1000MHz,

    Untitled

    Abstract: No abstract text available
    Text: RF2318 Preliminary LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations • Broadband Gain Blocks Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured


    Original     		PDF RF2318 1000MHz, 5000MHz. RF2318

    Untitled

    Abstract: No abstract text available
    Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at


    Original     		PDF RF3315Broadband RF3315 300MHz 40dBm 23dBm DS050318

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


    Original     		PDF

    HBT transistor GaAs

    Abstract: No abstract text available
    Text: RF3315 MICRO-DEVICES BROADBAND HIGH LINEARITY A M PLIFIER • Basestation Applications WLL, W -C D M A Systems • Cellular and PCS Systems Final PA for Low-Power Applications GENERAL PURPOSE AMPLIFIERS Typical Applications Product Description The RF3315 is a high-efficiency GaAs Heterojunction


    OCR Scan     		PDF RF3315 RF3315 300MHz RF3315PCBA-410 RF3315PCBA-411 900MHz) HBT transistor GaAs

    SMA 142-0701-881

    Abstract: No abstract text available
    Text: RF2903 — MICRODEVICES • Dual Mode Digital/Analog Receivers • Spread Spectrum Systems • Dual-IF Strip for PCS and 2.4 GHz ISM • Commercial Handheld Systems Band Receivers . . . .


    OCR Scan     		PDF RF2903 RF2903 t106TR-ND PCC101CGTR-ND PCC331CGTR-NO PCC330CGTR-ND PCC103BNTR-ND PCC060CNT PCC680CGTR-ND 0805C SMA 142-0701-881

    Untitled

    Abstract: No abstract text available
    Text: R FH RF2903 MICRO DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typ ical A p plications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems


    OCR Scan     		PDF RF2903 RF2903 150MHz 1000MHz 200MHz, SPCC060CNTR-ND PCC680CGTR-ND 0805CS-101XKBC 1008CS-270XMBC MPSS100-3C

    Untitled

    Abstract: No abstract text available
    Text: RF2903 M I C R O -DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems


    OCR Scan     		PDF RF2903 RF2903 150MHz 1000MHz 200MHz, Str00-3C RF2903PCBA