TRANSISTORS BJT list
Abstract: fairchild power bjt datasheet fairchild power bjt 8F SOT-23 PNP on bjt 522 O2 sot-89 pnp transistor A1 sot-323 ROM SOT fairchild LED TO-92 SOT 213
Text: Small Signal Transistors - New Releases Small Signal Transistors New Releases - Fall 2001 Summary Space saving packages: SOT-323, SOT-563F and SOT-623F Newly developed Fairchild solutions: Camera Strobe Transistors and High Current Transistors W2@6X?h ?W&@@@ Xh
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OT-323,
OT-563F
OT-623F
OT-323
FJX3904
FJX3906
FJX1182
TRANSISTORS BJT list
fairchild power bjt datasheet
fairchild power bjt
8F SOT-23 PNP on
bjt 522
O2 sot-89
pnp transistor A1 sot-323
ROM SOT
fairchild LED TO-92
SOT 213
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MSD623
Abstract: triacs P87LPC764FN P87LPC762FD P87LPC764BN sot 163 Package 80C51 P87LPC768FD P87LPC762BD P87LPC764BD
Text: 51LPC microcontrollers and three-quadrant triacs Simplifying the design of power control applications Semiconductors Description By combining our 51LPC microcontrollers and BTA2xx three-quadrant triacs, Philips Semiconductors has made controlling resistive and inductive
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51LPC
MSD623
triacs
P87LPC764FN
P87LPC762FD
P87LPC764BN
sot 163 Package
80C51
P87LPC768FD
P87LPC762BD
P87LPC764BD
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PS 223 supervision
Abstract: MSD623 P87LPC764BN ROM SOT triac analog control for inductive loads P87LPC767FN 404 sot 51LPC 80C51 P87LPC762BD
Text: 51LPC microcontrollers and three-quadrant triacs Simplifying the design of power control applications Semiconductors Description By combining our 51LPC microcontrollers and BTA2xx three-quadrant triacs, Philips Semiconductors has made controlling resistive and inductive
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51LPC
PS 223 supervision
MSD623
P87LPC764BN
ROM SOT
triac analog control for inductive loads
P87LPC767FN
404 sot
80C51
P87LPC762BD
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Coni igura ion
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Q62702-Z2026
Q62702-Z2027
OT-223
EHN00008
0235bD5
U254b2
235b05
Q1224b3
535b05
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2222 A
Abstract: npn 2222
Text: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration
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Q62702-Z2026
Q62702-Z2027
OT-223
2222 A
npn 2222
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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BFG135 power amplifier for 900Mhz
Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
711Qfl2ti
7110fl2b
BFG135
BFG135 power amplifier for 900Mhz
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
MBB300
BFG135 - BFG135
microstripline
npn 2222 transistor
power amplifier specifications at 900Mhz
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D2219
Abstract: D2003UK
Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en
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OT223
D2219
D2003UK
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stopwatch using 8051 microcontroller
Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:
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150-mil
S2105
S2105
stopwatch using 8051 microcontroller
3Gxxx
S1249
32k sram card 20pin battery
BA 92 SAMSUNG semiconductor replacement
M46Z128Y-XXXPM1
245AB-XXX-IND
50K ohm Trimmer Trim Pot Variable Resistor
DS0621-SDK
si288
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39 77 in sot-89 package
Abstract: No abstract text available
Text: Tape Dimensions And Orientation: Dimensions in mm 8 mm 12 mm SOT-23 \ p— A i ¡hH 7^7 SOT-89 SMDIP 11 _z 7 U - A l U — âJ U — d U - A L t.-a ] M M 8 . 3 12 -i 16 mm 15.7 3 Î 6. 3 i_ 1. 5 _3-^—. 4 . 1~* 1 . 6 1 1a t .A a J rJ y ! i Hi I" _ 3 _ ._ 9
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OT-23
OT-89
OT-143
OT-223
OD-80
OT-23
OT-143
OT-223
39 77 in sot-89 package
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Untitled
Abstract: No abstract text available
Text: DT2955 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim - A - ► >k D c ' t
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DT2955
OT-223
OT-223
DS11610
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DIODE smd marking A7p
Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Text: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur
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PMBD2836
PMBD2837
PMBD2838
PMBD6050
PMBD6100
PMBD7000
OT-23
OT-143
OT-223
DIODE smd marking A7p
smd code A4p
SOT23 marking A7p
sot23 a4p
A7p smd
smd code A7p
SMD L31
sot143 marking code JTp
smd A7p
P5D SMD
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Untitled
Abstract: No abstract text available
Text: DT014 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 'L I T E M Î I POWE R S EMICON DUCTO R j Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223
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DT014
OT-223
DS11602
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KY transistor
Abstract: transistor t 04 27
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK482-60A
OT223
KY transistor
transistor t 04 27
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BUK483-60A
Abstract: YBs transistor
Text: N AUER PHILIPS/DISCRETE b'lE D • bbSaW 0D3D73T OSD « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK483-60A
OT223
-ID/100
OT223.
BUK483-60A
YBs transistor
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DSS41A05
Abstract: resistor 0.22 ohm Dual 5w 79L05AC optocoupler Sd9 omron optocoupler relay es2818 es56 TL082 optocoupler Sd5 varistor 332k
Text: ES56-I Series 56K / V.90 Modem Solutions Data Sheet ESS Technology, Inc. DESCRIPTION MODEM FEATURES The ES56 chipset series is a highly integrated solution which brings advanced modem functionality to notebook and desktop systems. The ES56-I from ESS Technology
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ES56-I
ES56T-I
ES56V-I
ES2890S
42bis
2890S,
2819F
ES2818P
ES2818F
ES2819F
DSS41A05
resistor 0.22 ohm Dual 5w
79L05AC
optocoupler Sd9
omron optocoupler relay
es2818
es56
TL082
optocoupler Sd5
varistor 332k
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KDS 2F
Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
Text: International e Rectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET® Power MOSFET Surface M ount A dvanced Process Technology Ultra Low O n-R esistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V DSS = 55V ^DS on - 0.045Q lD = 3.7A Description
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IRFL4105
OT-223
KDS 2F
smd fl014
KDS DATE CODE
SMD rectifier 729
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DS11
Abstract: DT455N
Text: DT455N VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
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DT455N
OT-223
OT-223
DT455N
DS11
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SOT23 6pin MARKING 3F
Abstract: marking 3f 6pin MBR7535 MBR7545
Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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MBR7535
MBR7545
DO-35
SOT23 6pin MARKING 3F
marking 3f 6pin
MBR7545
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3148b
Abstract: No abstract text available
Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
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MBR3520
MBR3535
MBR3545
MBR3545
3148b
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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FZH 161
Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency
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AT-31625
OT-223
AT-31625
5965-5911E
FZH 161
FZH 111
FZH 181
transistor I 17-13 0773
CBC 184 transistor
FZH 175
S3230
FZH 165
FZH 165 b
fzh 171
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667 transistor ecb
Abstract: SOT-23 EBC SCR TRANSISTOR scr 209
Text: Mechanical Drawings 201 Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 037(0.94] 043(1.09) 1.0(25.4) M I N I MUM .330(8.38] .350(8.89) T 13 0 ( 3 . 3 0 ) 145(3.68) 1.0(25.4) M I N I MUM Case B-M Case A 4 125(3. .560(14 22 ) •600(15 24)
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O-220
O-220AC
O-237
O-247
667 transistor ecb
SOT-23 EBC
SCR TRANSISTOR
scr 209
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