2SB1132
Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Text: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE
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2SB1132
OT-89
2SB1132-P
2SB1132-Q
2SB1132-R
-100mA
-500mA,
-50mA
-50mA,
2SB1132
2SB1132R
2SB1132-R
2SB1132Q
2SB1132-Q
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pnp hfe 120-240
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.)
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2SA1213
OT-89
05Adc)
10Vdc,
pnp hfe 120-240
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Untitled
Abstract: No abstract text available
Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y
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KSC2881
120MHz
KSA1201
OT-89
KSC2881
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SOT89 MARKING CODE B2
Abstract: KSC2881 KSA1201
Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y
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KSC2881
120MHz
KSA1201
OT-89
KSC2881
SOT89 MARKING CODE B2
KSA1201
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Untitled
Abstract: No abstract text available
Text: KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSC2883
KSC2883
KSA1203
OT-89
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Untitled
Abstract: No abstract text available
Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code
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KSA1201
-120V
120MHz
KSC2881
OT-89
KSA1201
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transistor B3 OF
Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSC2883
KSA1203
OT-89
KSC2883
transistor B3 OF
B3 transistor
KSA1203
B3 marking transistor
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B3 transistor
Abstract: KSA1203 KSC2883
Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSA1203
KSC2883
OT-89
KSA1203
B3 transistor
KSC2883
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TRANSISTOR marking ar code
Abstract: KSA1201 KSC2881
Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code
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KSA1201
-120V
120MHz
KSC2881
OT-89
KSA1201
TRANSISTOR marking ar code
KSC2881
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Untitled
Abstract: No abstract text available
Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSC2883
KSA1203
OT-89
KSC2883
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transistor 1203
Abstract: No abstract text available
Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSA1203
KSA1203
KSC2883
OT-89
KSA1203OTF
KSA1203YTF
transistor 1203
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KSC2982
Abstract: No abstract text available
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
OT-89
KSC2982
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2SA1204
Abstract: 2SC2884
Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)
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2SC2884
2SA1204
2SA1204
2SC2884
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2SA1204
Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)
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2SA1204
2SC2884
2SA1204
2SC2884
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2SA1204
Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)
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2SA1204
2SC2884
2SA1204
2SC2884
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2SC1623
Abstract: 2SC1623-L4
Text: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA
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2SC1623-L4
2SC1623-L5
2SC1623-L6
2SC1623-L7
OT-23
2SC1623
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2SC1623
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1623 Features • • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA
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2SC1623
OT-23
2SC1623
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23 marking
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)
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KTC3876
KTA1505.
400mA.
10/--ank
100mA,
100mA
25Min.
40Min.
400mA
23 marking
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KTA1505S
Abstract: KTC3876S
Text: SEMICONDUCTOR TECHNICAL DATA KTC3876S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505S. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)
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KTC3876S
40QmA.
KTA1505S.
OT-23
100mA
400mA
100mA,
25Min.
40Min.
KTA1505S
KTC3876S
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Untitled
Abstract: No abstract text available
Text: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic
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KSA1201
OT-89
120MHz
KSC2881
250mm2x
0024b64
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23marking
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1505 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =25(Min.) at V Ce=-6V , Ic=-400mA. • Complementary to KTC3876. MAXIMUM RATINGS (Ta=25°C)
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-400mA.
KTC3876.
KTA1505
23marking
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transistor marking 12w
Abstract: No abstract text available
Text: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation Pc=1-2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25t; Symbol Characteristic Collector-Base Voltage
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KSC2883
KSA1203
OT-89
transistor marking 12w
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2982 STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: h F E i = 140~600 • Low Collector-Emitter Saturation Voltage: Vce sat = 0.5V • Collector Dissipation Pc =1 ~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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KSC2982
OT-89
002402b
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Untitled
Abstract: No abstract text available
Text: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA
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2SA1182
400mA
2SC2859.
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