HEM 152
Abstract: HEM158 HEM151 HER151 HER158
Text: HIGH EFFICIENCY SURFACE MOUNT RECTIFIERS HEM151 THRU HEM158 1.5 AMPS. High Efficient Surface Mount Rectifiers Features For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency
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HEM151
HEM158
SMA/DO-214AA
RS-481
HER151
HER158)
HEM 152
HEM158
HER158
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nsm 4000
Abstract: GE 0386
Text: IR 3/16 Enc o d e/Dec o d e IC Tec hnic a l Da t a H SDL-7001-2500 p c ,t a p e a nd r eel H SDL-7001# 100-100p c , 50/t u b e Fea t u r es Desc r ip t io n ¥ Co m p lia nt w it h Ir DA 1.0 Phy sic a l La y er Sp ec s ¥ Int er fa c es w it h Ir DA 1.0 Co m p
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100-100p,
SDL-7001
65-5150E
68-7456E
nsm 4000
GE 0386
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Untitled
Abstract: No abstract text available
Text: 3 : Te le sco p ic Ra ils 3 .1 Te le scopic Ra ils 6 0 k g D Despit e t heir rugged const ruct ion, t hese are am ong t he slim m est t elescopic rails avaiable on t he m arket . All types can be locked in the extended position and are itted with a quick release latch. The load carrying capacity of
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kg/132
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Untitled
Abstract: No abstract text available
Text: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature
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FLU17XM
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
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FLC301XP
Abstract: 32 mag wire
Text: FLC30JXP GaAs F E T and H E M I Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Symbol Hem Saturated Drain Current IDSS Test Conditions 1200 1800 mA - 600 - mS -1.0 -2.0 -3.5 V -5 - - V 33.5 34.8 - dBm 8.5 9.5 - dB VDS = 5V, Iq s = 800mA Pinch-off Voltage
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FLC30JXP
800mA
-60fxA
10pcs.
25jjm
FLC301XP
32 mag wire
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7428F
Abstract: No abstract text available
Text: F LM 3 742-8F Internally Matched Power ìaAs i h ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Symbol Hem Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Condition Rating Unit vds 15 V vgs -5 V 42.8 w °c °c Tc = 25°C Pt Storage Temperature
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742-8F
2200mA
7428F
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1213-I2F
Abstract: FUJITSU F 1213
Text: F L M 1213-12 F Internally M atch ed Power ìa A s I- l ì ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Hem Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C
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36dBm
32dBm
30dBm
28dBm
26dBm
1213-I2F
FUJITSU F 1213
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Untitled
Abstract: No abstract text available
Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is
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KM23V32005BG
32M-Bit
/2Mx16)
304x8
1S2x16
KM23V32005BG
152x16
KM23V
5BG-10
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16205d
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23C16205DSG 16M-Bit 1Mx16 /512KX32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16{word mode) The K M 2 3 C 1 6 2 0 5 D S G is a fully static m ask programmable 5 2 4 ,2 8 8 x 32{double word mode)
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KM23C16205DSG
16M-Bit
1Mx16
/512KX32)
100ns
KM73C16205DSG-10
KM23C1620SDSG-12
KM23C16205DS
16205d
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Untitled
Abstract: No abstract text available
Text: \ Nippon / AMORPHOUS CHOKE COIL | CHEMhCONI Reference sa mple ^ D : M aximum outer diameter w : M aximum width Total lead length ( L ) * : 30mm l+amm, -3mm) Soldering boundary ( a ) ': Omm (+4mm, -Omni) • The bottom of Ihe core or coil (v )is defined as
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TM05211N7E)
T191210N,
200kHz
E1008A
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Untitled
Abstract: No abstract text available
Text: KM68V2000, KM68U2000 Family CMOS SRAM 2S6Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Process Technology : 0,4nm CMOS • Organization: 256Kx8 • Power Supply Voltage KM68V20Q0 Family : 3.0V - 3.6V KM68U2O0O Family : 2.7V ~ 3.3V
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KM68V2000,
KM68U2000
256Kx8
KM68V20Q0
KM68U2O0O
32-TSQP1-0820F,
32-TSOP1-0813
KM68V2000
KM68V200Ü
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Untitled
Abstract: No abstract text available
Text: Diodes international IS2R Rectifier Fax on Case Demand O utline Key Number •fsm Part Number V RRM V 1FAV@Tc (A) (C) Yf* @ 'fM (V) (A) 50 Hz (A) &0Hz (A) R6»C(DC) (°C/W) Notes Standard Recovery DQ-205AC (D0-30) S D 150N 20P C 2000 (50 125 1.5 470 3000
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DQ-205AC
D0-30)
DO-205AC
DO-30
K2020
SD600R08PC)
12FR100
6F10M,
SD600N08MC
152L5A.
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips ELECTRICAL C H A R A C T E R ISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS =2V, V q s = OV 15 40 85 mA Transconductance 9m VDS = 2V, Id s = 10mA 40
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FHX35X
-10fiA
12GHz
10pcs.
FHX35X
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Untitled
Abstract: No abstract text available
Text: HA21008 BS Tuner Use GaAs IC Preliminary Application G a A s m o n o lit h ic I C B S tu n e r w id e b and a m p lif ie r Features • 5 V O p e ra tio n • O p e ra tio n a l in a ll B S fre q u e n c y 0 .9 5 to 2 .0 5 G H z • S ta b le in p u t im p e d a n c e ( V S W R = 2 t y p )
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HA21008
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et 1103
Abstract: FLK012XP
Text: FLK012XP Ga A s F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -5 - - V 19.5 20.5 - dBm 7.0 8.0 - dB - 26 - % - 2.5 - dB 7 - dB 11
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FLK012XP
12GHz
et 1103
FLK012XP
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Untitled
Abstract: No abstract text available
Text: A COMPANY OF MODEL SOGC Thick Film Resistor N etw orks D u al-ln-Lin e, S m all O u tlin e M olded Dip 0 1 , 0 3 , 0 5 S c h e m a tic s - 16 or 2 0 Pins FEATURES • Reduces total assembly costs • .110" [2.79mm] maximum seated height • Rugged, molded case construction
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100PPM/
SOGN-0003
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CT 1061 C 40
Abstract: a4td1 1110 mmic
Text: M aann A M P ic o m p a n y Silicon Bipolar MMIC Cascadable Amplifier MA4TD1110 V2.00 Features • • • • • • • Gold-Ceram ic Microstrip Package Outline1: High Dynamic Range Cascadable 50£2/75£2 Gain Block 3dB Bandwidth: 50 MHz to 1.3 GHz 17.0 dBm Typical PldB @ 1.0 GHz
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MA4TD1110
MA4TD1110
CT 1061 C 40
a4td1
1110 mmic
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Untitled
Abstract: No abstract text available
Text: n ic h ic o n ALUMINUM ELECTROLYTIC CAPACITORS GK HH PC B o a rd M o u n tin g T y p e series Anil •Solver I Feature {Through 100V only • Higher C/V products. • Plentiful line-up from 0 3 5 X 6 3 to 04OX1OOmm. • A uxiliary te rm in a ls provided to assure anti-vibration perform am ance.
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04OX1OOmm.
120HZ,
36X68
40X63
35X80
35X63
35X100
40X50
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AL4A
Abstract: IM1618 fC-90B
Text: re -9 5 re-90 5 r e H e p a T o p H b iii C BepxBbicoKO M acTO TH biii rEHEPATOPHblM CBEPXBblCOKOHACTOTHbm TPMOfl MICROWAVE TRIODE T p n o fl TC-9 B (rC-905) npeflHa3HaneH fl/ia reHepupoBaHun BbicoKOMacTOTHbix KoneôaHMM b reHepaTopax c B H e u u Heii oôpaTHOM CBA3bio b HenpepbiBHOM pe>KMMe pa6oTbi b fleL(HMeTp0B0M flMana30He bojih.
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rC-90E)
rC-905)
flMana30He
B03flywHoro
TC-90B.
rC-95
AL4A
IM1618
fC-90B
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PM50302F
Abstract: diode H5 1.5-25 5v.1 45F125
Text: HITACHI PM50302F SILICON N -C H A N N E L POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low OrvResistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain
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PM50302F
PM50302F
diode H5 1.5-25
5v.1
45F125
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Untitled
Abstract: No abstract text available
Text: H D 7 4 A L V C H 1 6 3 7 3 — Preliminary — 16-bit Transparent D-type Latches with 3-state Outputs Description The HD74ALVCH16373 is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers. It can be used as two 8-bit latches or one 16-bit latch. When the latch
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16-bit
HD74ALVCH16373
HD74ALVCH16373
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Untitled
Abstract: No abstract text available
Text: S urface H I 0 II N1 SINGLE ROW TERMINATION SRT PIN #1 IDENTIFICATION MARK £ 2.03 ±12 .080 ±.005 I PART NO. CTS DATE 7 T SEATING PLANE "A " - In-Line Surface M ount Resistor N etw orks • F gli dens i t y p a c k a y r u ■ L o w p r o f Ic: • 0.1
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1N5665A Zener Diode
Abstract: in5647a 1N5647 1N5657 tvs unipolar DO-13 diode 1n5658 IN5665A 1N5638 1N5644 1N5645
Text: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s n :31.8min. : | | _ J 1 b 33 7.5 9.0 :25.4;min. T iim s ib te P rotection MAXIMUM RATINGS When no problems exist, Oyctom TVS • Peak pulse power (P pk): 1500 watts Diodes are totally invisible to the circuits
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