MSM6595A
Abstract: MSM6388 MSM6389 MSM6588 MSM6595 SSOP30-P-56-0 QFJ18-P-R290-1
Text: E2D0038-39-21 This version: Feb. 1999 MSM6595A-xxx Previous version: May. 1997 ¡ Semiconductor MSM6595A-xxx ¡ Semiconductor 1-Mbit Serial Voice ROM GENERAL DESCRIPTION The MSM6595A is a MSM6595 short TAT process version. The MSM6595A is a serial voice ROM with a 1,048,576-word ¥ 1-bit configuration.
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E2D0038-39-21
MSM6595A-xxx
MSM6595A
MSM6595
576-word
MSM6388
MSM6389
MSM6588
SSOP30-P-56-0
QFJ18-P-R290-1
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Untitled
Abstract: No abstract text available
Text: TMA5x Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 5 ARMS on-state current
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E118037)
O-220F)
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Untitled
Abstract: No abstract text available
Text: Performance Masking Tape 233+ page 1 of 2 Technical Data Product Description A high performance crepe paper masking tape for most paint masking applications. Product Construction Backing Adhesive Color Standard Roll Length Smooth crepe paper with a solvent resistant saturant
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N/100mm)
D-3330
D-3759
20-7W-03
July/17/2002
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LM10A-W3-727
Abstract: LM10A LM10A-W2-865 LM10A-W1-865 LM10A-W2-854
Text: Data Sheet LINEARlight Flex LM10A Benefits Picture for Datasheet is missing !!! ¾ Linear separable LED strip on flexible printed circuit board with self-adhesive back ¾ Low profile ¾ Available in various colors ¾ Minimal heat generation Applications ¾ Edge-lighting of transparent or diffused
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LM10A
LM10A-W2-865
LM10A-W1-865
LM10A-W2-854
LM10A-W1-854
LM10A-W2-847
LM10A-W1-847
LM10A-W3-727
LM10A-A1
LM10A-Y1
LM10A-W3-727
LM10A
LM10A-W2-865
LM10A-W1-865
LM10A-W2-854
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D-6123
Abstract: PPP-T-42C 3M-23-1 paint
Text: 3 Scotch Performance Masking Tape 231/231A* Technical Data February, 2010 *231A designation was added 12/04 for the Aerospace market Product Description Scotch® Performance Masking Tape 231/231A is a premium high performance crepe paper masking tape designed to perform well in most industrial painting
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231/231A*
231/231A
225-3S-06
D-6123
PPP-T-42C
3M-23-1
paint
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Untitled
Abstract: No abstract text available
Text: DATE Jan.-18-'02 CHECKED Jan.-18-'02 CHECKED Jan.-18-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3610-01
MS5F5121
H04-004-05
H04-004-03
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Untitled
Abstract: No abstract text available
Text: DATE Jan.-18-'02 CHECKED Jan.-18-'02 CHECKED Jan.-18-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3606-01
MS5F5117
H04-004-05
H04-004-03
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MSM514221B
Abstract: MSM518221 MSM518221-25JS MSM518221-25ZS MSM518221-30ZS MSM518221-40ZS
Text: E2L0032-17-Y1 ¡ Semiconductor MSM518221 ¡ Semiconductor This version:MSM518221 Jan. 1998 Previous version: Dec. 1996 262,214-Word ¥ 8-Bit Field Memory DESCRIPTION The OKI MSM518221 is a high performance 2-Mbit, 256K ¥ 8-bit, Field Memory. It is designed for
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E2L0032-17-Y1
MSM518221
214-Word
MSM518221
OP28-P-430-1
MSM514221B
MSM518221-25JS
MSM518221-25ZS
MSM518221-30ZS
MSM518221-40ZS
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Untitled
Abstract: No abstract text available
Text: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes
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FMH06N80E
MS5F07479
H04-004-05
H04-004-03
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HIT1577 R07DS0485EJ0100 Rev.1.00 Jun 22, 2011 Silicon PNP Epitaxial Features • Low frequency power amplifier Outline RENESAS Package code: PTSP0003ZA-A Package name: CMPAK 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “TQ–”.
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HIT1577
R07DS0485EJ0100
PTSP0003ZA-A
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HAT2179R
Abstract: HAT2179R-EL-E
Text: HAT2179R Silicon N Channel MOS FET High Speed Power Switching REJ03G1570-0100 Rev.1.00 Jul 06, 2007 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D Package name: SOP-8<FP-8DAV> 8 5 6 7 8
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HAT2179R
REJ03G1570-0100
PRSP0008DD-D
HAT2179R
HAT2179R-EL-E
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MSM6255
Abstract: Z80 CPU DIMENSIONS 40H245 MA10 MA11 MA12 MA15 MSM6255GS-BK MSM6255GS-K QFP80-P-1420-0
Text: E2B0039-27-Y2 ¡ Semiconductor MSM6255 ¡ Semiconductor This version: Nov. 1997 MSM6255 Previous version: Mar. 1996 DOT MATRIX LCD CONTROLLER GENERAL DESCRIPTION The MSM6255 is a CMOS si-gate LSI designed to display characters and graphics on a DOT MATRIX LCD panel.
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E2B0039-27-Y2
MSM6255
MSM6255
QFP80-P-1420-0
80-BK
Z80 CPU DIMENSIONS
40H245
MA10
MA11
MA12
MA15
MSM6255GS-BK
MSM6255GS-K
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RJK2009DPM
Abstract: No abstract text available
Text: Preliminary Datasheet RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Features • Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM
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RJK2009DPM
REJ03G0474-0300
PRSS0003ZA-A
RJK2009DPM
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RJK1002DPP-E0
Abstract: No abstract text available
Text: Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 100 V, 70 A, 7.6 m Features • High speed switching Low drive current Low on-resistance RDS on = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline
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RJK1002DPP-E0
R07DS0626EJ0100
O-220FP
PRSS0003AG-A
O-220FP)
RJK1002DPP-E0
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MSM64172
Abstract: S023 CRYSTAL CSB500E
Text: E2E0032-38-95 ¡ Semiconductor MSM64172 ¡ Semiconductor This version: MSM64172 Sep. 1998 Previous version: Mar. 1996 4-Bit Microcontroller with Built-in Serial Port and LCD Driver GENERAL DESCRIPTION The MSM64172 is a low-power 4-bit microcontroller that incorporates Oki's original CPU core
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E2E0032-38-95
MSM64172
MSM64172
nX-4/20.
2016-byte
128-nibble
QFP56-P-910-0
S023 CRYSTAL
CSB500E
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RQK0604IGDQATL-E
Abstract: RQK0604IGDQA SC-59A
Text: RQK0604IGDQA Silicon N Channel MOS FET Power Switching REJ03G1496-0100 Rev.1.00 Jan 15, 2007 Features • Low on-resistance RDS on = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive
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RQK0604IGDQA
REJ03G1496-0100
PLSP0003ZB-A
RQK0604IGDQATL-E
RQK0604IGDQA
SC-59A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 Previous: REJ03G1521-0200 Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current
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RQK2501YGDQA
R07DS0312EJ0300
REJ03G1521-0200)
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0500 Rev.5.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive
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RQJ0201UGDQA
R07DS0290EJ0500
PLSP0003ZB-A
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RJK6013DPE
Abstract: RJK6013DPE-00-J3
Text: RJK6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1535-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D
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RJK6013DPE
REJ03G1535-0100
PRSS0004AE-B
RJK6013DPE
RJK6013DPE-00-J3
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PRSS0004ZE-A
Abstract: RJK4014DPK RJK4014DPK-00-T0 SC-65
Text: RJK4014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1576-0100 Rev.1.00 Aug 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate
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RJK4014DPK
REJ03G1576-0100
PRSS0004ZE-A
PRSS0004ZE-A
RJK4014DPK
RJK4014DPK-00-T0
SC-65
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PRSS0004ZE-A
Abstract: RJK6018DPK RJK6018DPK-00 SC-65
Text: RJK6018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1537-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate
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RJK6018DPK
REJ03G1537-0100
PRSS0004ZE-A
PRSS0004ZE-A
RJK6018DPK
RJK6018DPK-00
SC-65
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