SGA-1263Z
Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS100916
SGA-1263Z
SGA1263ZSQ
trace code marking RFMD
InP HBT transistor
PHEMT marking code a
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Untitled
Abstract: No abstract text available
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS111011
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SGA1263Z
Abstract: SGA1263
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
SGA1263Z
DCto4000MHz
OT-363
50GHz
DS111011
SGA1263
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SGA-1263
Abstract: SGA-1263Z BY 356
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263
SGA-1263Z
BY 356
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trace code marking RFMD
Abstract: SGA-1263 SGA-1263Z
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
trace code marking RFMD
SGA-1263Z
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MARKING HBT
Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
MARKING HBT
SGA-1263Z
trace code marking RFMD
SGA1263
18 sot-363 rf power amplifier
InP HBT transistor
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SGA8343z
Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
SGA-8343Z
CL10B104K
MCR03*J100
MCR03J242
MCR03J620
MCR03J
SOT343 lna
ROHM TRACE CODE
ROHM trace code of lot
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Untitled
Abstract: No abstract text available
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
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SGA8343Z
Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS100909
SGA8343Z-EVB4
1575MHz
MCR03*J102
SGA8343ZSR
SGA-8343Z
EVB1
1608-FS3N9S
lot code RFMD
MCH185A150J
MCR03J5R1
toko 10k series
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SGA-8343Z
Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110205
SGA8343Z-EVB4
1575MHz
SGA-8343Z
samsung cl
SOT343 lna
MICROWAVE DEVICES
GaAs pHEMT LOW SOT-343
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A83Z
Abstract: A83Z data a83 sot transistor A83 sga8343z SGA-8343 SGA-8343Z RFMD sga-8343Z 34A83
Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to
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SGA-8343
OT-343
SGA-8343Z
EDS-101845
SGA-8343
A83Z
A83Z data
a83 sot
transistor A83
sga8343z
SGA-8343Z
RFMD sga-8343Z
34A83
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samsung bluetooth
Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to
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SGA-8343
OT-343
SGA8343ZPCK-EVB2
SGA8343ZPCK-EVB3
SGA8343ZPCK-EVB4
DS100111
samsung bluetooth
SGA8343Z
MCR03*J102
CL10B104KONC
SGA-8343Z
8343
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MCH185A100JK
Abstract: transistor Bc 540 pin transistor Bc 540
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SPA1526Z
SOF-26
SOF-26
Matchi9421
SPA1526ZSQ
MCH185A100JK
transistor Bc 540 pin
transistor Bc 540
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SPA1426Z
Abstract: TAJA105K020R
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SPA1426Z
SOF-26
SOF-26
DS110610
SPA1426ZSQ
TAJA105K020R
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Untitled
Abstract: No abstract text available
Text: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable
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SXB4089Z
400MHz
2500MHz
SXB4089Z
OT-89
2500MHz
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25c2625
Abstract: ECB-101161 267M3502104
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
DS121024
25c2625
ECB-101161
267M3502104
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
the-9421
DS110720
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Transistor BC 457
Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
Text: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs
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SPA-1426Z
SOF-26
SPA-1426Z
SOF-26
SPA-1426Z-EVB1
SPA-1426Z-EVB2
SPA-1426Z-EVB3
Transistor BC 457
MCH185CN104KK
TAJA105K020R
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MCH185A100JK
Abstract: 1000PPM
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SPA1526Z
SOF-26
SOF-26
SPA1526ZSQ
SPA1526ZSR
MCH185A100JK
1000PPM
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SPA-1426
Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SPA1426Z
SOF-26
SOF-26
Opt17]
DS120601
SPA-1426
Transistor BC 457
MCH185A8R2JK
MCH185A221JK
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Untitled
Abstract: No abstract text available
Text: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor HBT MMIC housed in low-cost, surface-mountable
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SXB4089Z
400MHz
2500MHz
SXB4089Z
OT-89
2500MHz
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spa1526
Abstract: No abstract text available
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SOF-26
SPA1526Z
SPA1526ZSQ
SPA1526ZSR
850MHz
spa1526
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Transistor BC 457
Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
Text: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs
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SPA-1526Z
SOF-26
SPA-1526Z
SOF-26
SPA-1526Z-EVB1
SPA-1526Z-EVB2
SPA-1526Z-EVB3
Transistor BC 457
bc 457 Transistor
MCH185A101JK
MCH185CN104KK
TAJA105K020R
MCH185A100JK
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Untitled
Abstract: No abstract text available
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SOF-26
SPA1426Z
enha9421
DS120601
SPA1426ZSQ
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