Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HAMMING CODE-ERROR DETECTION CORRECTION Search Results

    HAMMING CODE-ERROR DETECTION CORRECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TLP5212 Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TLP5214A Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    HAMMING CODE-ERROR DETECTION CORRECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
    Text: SY10E193 SY100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR E160 E193 MC10193 SY100E193 SY10E193 SECDED

    SECDED

    Abstract: E160 E193 MC10193 SY100E193 SY10E193
    Text: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR SECDED E160 E193 MC10193 SY100E193 SY10E193

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193
    Text: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. M9999-032006 E160 E193 MC10193 SY100E193 SY10E193

    74F632

    Abstract: 74F632QC C1995 DB31 DP8406 DP8406QV V52A F632 Diode cbn 9579
    Text: DP8406 54F 74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The DP8406 device is a 32-bit parallel error detection and correction circuit (EDAC) in a 52-pin or 68-pin package The EDAC uses a modified Hamming code to generate a 7-bit


    Original     		PDF DP8406 74F632) 32-Bit DP8406 52-pin 68-pin 39-bit 74F632 74F632QC C1995 DB31 DP8406QV V52A F632 Diode cbn 9579

    54HSC630

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS 54HSC/T630 APRIL 1995 DS3595-3.4 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to


    Original     		PDF 54HSC/T630 DS3595-3 16-BIT 54HSC/T630 22-bit 54HSC630

    DS3595-5

    Abstract: 54HST630 DB10 DS3595 XG404
    Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


    Original     		PDF 54HSC/T630 16-Bit DS3595-5 54HSC/T630 22-bit 54HST630 DB10 DS3595 XG404

    XG404

    Abstract: DB10 DS3595-5 ds35954 DS3595
    Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


    Original     		PDF 54HSC/T630 16-Bit DS3595-4 DS3595-5 54HSC/T630 22-bit XG404 DB10 ds35954 DS3595

    54HST630

    Abstract: DB10 DS3595-5
    Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 DS3595-5.1 July 2002 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


    Original     		PDF 54HSC/T630 16-Bit DS3595-5 54HSC/T630 22-bit 54HST630 DB10

    49C460

    Abstract: 7 bit hamming code 49C465 sd1623 XOR16 SD815
    Text: APPLICATION NOTE AN-151 USING 32-BIT EDCS IN 8-BIT AND 16-BIT APPLICATIONS Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION The 49C460 and 49C465 are 32-bit error detection and correction EDC devices that use a modified Hamming code easily adaptable to 16 , 32 or 64-bit applications. 16-bit


    Original     		PDF AN-151 32-BIT 16-BIT 49C460 49C465 64-bit 16-bit 7 bit hamming code sd1623 XOR16 SD815

    c1823.zip

    Abstract: verilog code hamming an1823 flash hamming ecc 7 bit hamming code hamming code hamming code-error detection correction LP05 LP03 LP06
    Text: AN1823 APPLICATION NOTE Error Correction Code in NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC , in ST NAND Flash memories, which can detect 2-bit errors and correct 1-bit errors per 256 Bytes. This Application Note should be downloaded with the c1823.zip file.


    Original     		PDF AN1823 c1823 c1823.zip verilog code hamming an1823 flash hamming ecc 7 bit hamming code hamming code hamming code-error detection correction LP05 LP03 LP06

    Untitled

    Abstract: No abstract text available
    Text: 632 54F/74F632 32-Bit Parallel Error Detection and Correction Circuit The 32-bit parallel error detection and correction circuit EDAC in p £ ka g e . The EDAC uses a modified Hamming code to generate a 7-fflinph<Kk w fljb ito m a 32-bit data word. This check word is


    OCR Scan     		PDF 54F/74F632 32-Bit

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ Hamming code generation 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with industry standard 10KH,


    OCR Scan     		PDF lnternal75Ki2 MC10E/100E193 SY10E193 SY100E193 pa850 SY10E193JC J28-1 SY100E193JC

    XTD22

    Abstract: No abstract text available
    Text: AT&T Microelectronics Product Specification Sheet 1042BL initial Use 5ESS EDC32 Description The 1042BL EDC32 performs error detection and correction on a 32-bit data word using seven bits of correction code. The correction code generated by the device is a modified Hamming


    OCR Scan     		PDF 1042BL EDC32 1042BL EDC32 32-bit am29c660 68-pin XTD22

    Untitled

    Abstract: No abstract text available
    Text: CM CO O £3 National ÆÆ Semiconductor 54F/74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The ’F632 device is a 32-bit parallel error detection and correction circuit (EDAC in a 52-pin or 68-pin package. The EDAC uses a modified Hamming code to generate a 7-bit


    OCR Scan     		PDF 54F/74F632 32-Bit 52-pin 68-pin 39-bit

    hamming code

    Abstract: "hamming code" 4 bit hamming code BU-203
    Text: AmZ8160 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynamic memory


    OCR Scan     		PDF 16-Bit AmZ8160 AmZ8000 Z8000 Am2960 hamming code "hamming code" 4 bit hamming code BU-203

    Z8000

    Abstract: "hamming code"
    Text: Am2960 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynam ic memory


    OCR Scan     		PDF Am2960 16-Bit Am2960s 32-bit 64-bit Z8000 "hamming code"

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S E M I C O N D U C T O R S DS3595-3.3 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


    OCR Scan     		PDF DS3595-3 54HSC/T630 16-BIT 54HSC/T630 22-bit Cobalt-60 Mil-Std-883 3X1011Rad

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193

    f630

    Abstract: bil3 hamming code
    Text: 630 54F/74F630 Connection Diagrams 16-Bit Error Detection and Correction Circuit 3-State Outputs T— r '—'' D EFpr M jv c c DB q [~~2~ ~27] SEF Descrip D B il~3~ ÏÜ S , The 'F630 is a 16-bit Error Detection And Correction EDAC circuit with 3-state oufpu4PR*Uj£s a modified Hamming code to generate a 6-bit


    OCR Scan     		PDF 54F/74F630 16-Bit 22-bit 25lSn 54F/74F f630 bil3 hamming code

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193

    block diagram code hamming

    Abstract: ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 SY10E193 p4350
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY S E M IC O N D U C T O R SY10E193 SY100E193 DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75K MC10E/100E193 SY10/100E193 SY10E193JC J28-1 SY10E193JCTR SY100E193JC block diagram code hamming ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 p4350

    Untitled

    Abstract: No abstract text available
    Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ C10E/100E193 10/100E SY10E193JC J28-1 SY10E193JCTR SY100E193JC

    MC10193

    Abstract: E160 E193 SY100E193 SY101E193
    Text: A ERROR DETECTION/ CORRECTIVE CIRCUIT SYN ERG Y e v in n F ic n 1 y 101E193 _ SEMICONDUCTOR J D E S C R IP T IO N FEATURES Hamming Code Generation. 8 - Bit Wide. Expandable for more width. Provides Parity Register. ESD Protection of 2000V.


    OCR Scan     		PDF SY100E193: SY101E193: MC10E/100E193. SY10E/100E/101E193 MC10193 E160 E193 SY100E193 SY101E193

    block diagram code hamming

    Abstract: SECDED 7 bit hamming code hamming code E160 E193 MC10193 SY100E193 SY10E193 generate the parity after shift register block
    Text: *SYNERGY ERROR DETECTION/ CORRECTION CIRCUIT S E M IC O N D U C TO R FEATURES SY10E193 SY100E193 D E S C R IP T IO N I Hamming code generation i 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with Industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75Kii MC10E/100E193 SY100E193 S0013A1 000D7D2 block diagram code hamming SECDED 7 bit hamming code hamming code E160 E193 MC10193 generate the parity after shift register block