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    HALL-EFFECT-SENSOR UGN3506 Search Results

    HALL-EFFECT-SENSOR UGN3506 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    HALL-EFFECT-SENSOR UGN3506 Datasheets Context Search

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    UGN3507

    Abstract: UGN3506 ugn3508 UGN3501 27702A measure current toroid UGN3503 GAP2000 Hall-Effect-Sensor ugn3503 MAGNETIC HEAD impedance
    Text: Application Note 27702A* APPLICATIONS INFORMATION LINEAR HALL-EFFECT SENSOR ICS by Joe Gilbert and Ray Dewey LINEAR SENSOR ICS — FEATURES & BENEFITS Linear Hall-effect devices are immune to most environmental disturbances that may affect optical or mechanical devices, such as vibration, moisture, dirt or oil films,


    Original     		7702A* UGN3507 UGN3506 ugn3508 UGN3501 27702A measure current toroid UGN3503 GAP2000 Hall-Effect-Sensor ugn3503 MAGNETIC HEAD impedance PDF