marking KR 4pin
Abstract: 4 pin hall marking
Text: MA111 GaAs Hall Elements OH004 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic
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MA111
OH004
150mV
marking KR 4pin
4 pin hall marking
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hall marking D
Abstract: No abstract text available
Text: MA111 GaAs Hall Elements OH010 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic
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MA111
OH010
105mV
hall marking D
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OH008
Abstract: 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin
Text: MA111 GaAs Hall Elements OH008 GaAs hall element Unit : mm ● Input resistance : typ. 0.75kΩ 3 2 0.6±0.1 0.8±0.1 2.85±0.25 ● Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C
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MA111
OH008
105mV
OH008
4pin hall sensor
hall sensor ic 4pin
hall ic 4pin
hall sensor 4pin
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hall 96a
Abstract: 80 L hall effect sensor 3 pin hall+96a
Text: A1233 Dual Channel Hall Effect Direction Detection Sensor IC Features and Benefits Description Precisely aligned dual Hall elements Tightly matched magnetic switchpoints Speed and direction outputs Individual Hall element outputs L package Output short circuit protection
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A1233
A1233
hall 96a
80 L hall effect sensor 3 pin
hall+96a
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Neomax 44H
Abstract: neodymium magnet Neomax BU52014HFV BU52004GUL
Text: Hall IC Series / Hall IC Latch type Omnipolar Detection Hall ICs (Polarity detection for both S and N features dual outputs) No.09045EBT01 BU52004GUL, BU52014HFV ●Description The BU52004GUL and BU52014HFV are bipolar Hall ICs incorporating a polarity determination circuit that enables
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09045EBT01
BU52004GUL,
BU52014HFV
BU52004GUL
BU52014HFV
R0039A
Neomax 44H
neodymium magnet
Neomax
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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CYTY108A,
CYTY320,
CYTY300B-CS)
CYTY211)
D-85464
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CYTY211
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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CYTY320)
CYTY211)
D-85464
CYTY211
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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CYTY320,
CYTY300B-CS)
CYTY211)
D-85464
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TRIAC 40669
Abstract: hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor
Text: Application Note 27701B* HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches
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27701B*
362-A
TRIAC 40669
hall effect sensor ugn3503
Magnetic Tachometer with ug*3503
gaussmeter
PICKUPS coil crankshaft sensor
40669 Triac
how to connect 2N3055
motor ugn3503
induction balance metal detector
vane air flow sensor
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BU52001GUL
Abstract: HALL EFFECT IC APPLICATIONS hall magnetic bipolar hall sensor 4-pin BU52011HFV BU52015GUL BU52021HFV BU52025G
Text: Hall IC Series / Hall IC Latch type Bipolar Detection Hall ICs BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD7411G ●Description The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to Low.
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BU52001GUL,
BU52011HFV,
BU52021HFV,
BU52015GUL,
BU52025G,
BU52051NVX,
BD7411G
BD7411G
BU52001GUL
BU52015GUL)
HALL EFFECT IC APPLICATIONS
hall magnetic bipolar
hall sensor 4-pin
BU52011HFV
BU52015GUL
BU52021HFV
BU52025G
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HALL SENSOR mark A2
Abstract: BU52001GUL BU52011HFV BU52015GUL BU52021HFV BU52025G 3 terminal hall effect sensor for magnet detection SSON004X1216 neomax 44H
Text: Hall IC Series / Hall IC Latch type Bipolar Detection Hall ICs BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD7411G ●Description The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to Low.
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BU52001GUL,
BU52011HFV,
BU52021HFV,
BU52015GUL,
BU52025G,
BU52051NVX,
BD7411G
BD7411G
BU52001GUL
BU52015GUL)
HALL SENSOR mark A2
BU52011HFV
BU52015GUL
BU52021HFV
BU52025G
3 terminal hall effect sensor for magnet detection
SSON004X1216
neomax 44H
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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RanCYTY108A,
CYTY320,
CYTY108A,
CYTY300B-CS)
CYTY211)
D-85464
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TRIAC 40669
Abstract: Hall-Effect-Sensor ugn3503 slip ring motor characteristics curve 2N3055 series voltage regulator 2N3055 power amplifier circuit IC TTL 7400 TTL 7400 hall effect sensor ugn3503 power transistor 2n3055 induction motor speed control used triac based
Text: Application Note 27701B* HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches
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27701B*
362-A
TRIAC 40669
Hall-Effect-Sensor ugn3503
slip ring motor characteristics curve
2N3055 series voltage regulator
2N3055 power amplifier circuit
IC TTL 7400
TTL 7400
hall effect sensor ugn3503
power transistor 2n3055
induction motor speed control used triac based
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Loctite 406
Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Injection mold foam Ultrasonic welding generator FLEX THERMOSET COMPOUND N140 AH010 N140 ALLEGRO
Text: Application Note 27703.1† GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical
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Untitled
Abstract: No abstract text available
Text: MA111 GaAs Hall Elements OH10017 OH017 GaAs hall element Input resistance : typ. 2kΩ(min. 1.5kΩ) 3 2 ● Mini thin type (4-pin) package. Automatic insertion through taping and magazine possible. • Applications Various hall motor . Low current dissipation type
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MA111
OH10017
OH017)
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Untitled
Abstract: No abstract text available
Text: Hall IC Series / Hall IC Latch type Omnipolar Detection Hall ICs BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD7411G ●Description The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to
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BU52001GUL,
BU52011HFV,
BU52021HFV,
BU52015GUL,
BU52025G,
BU52051NVX,
BD7411G
BD7411G
BU52001GUL
BU52015GUL)
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N140 ALLEGRO
Abstract: Ultrasonic welding generator Allegro Hall-Effect ICs GH SC-59 Loctite 406 pressure low die bond sensor RTV HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E FLEX THERMOSET COMPOUND TO-236A TRA-CON
Text: Application Note 27703.1‡ GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical
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DN8798MS
Abstract: hall sensor field measuring
Text: Hall ICs DN8798MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation
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DN8798MS
DN8798MS
hall sensor field measuring
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Neomax 44H
Abstract: BD7411G ROHM BU52001GUL BU52011HFV BU52015GUL BU52021HFV BU52025G
Text: Hall IC Series / Hall IC Latch type Omnipolar Detection Hall ICs BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD7411G No.09045EBT02 ●Description The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to
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BU52001GUL,
BU52011HFV,
BU52021HFV,
BU52015GUL,
BU52025G,
BU52051NVX,
BD7411G
09045EBT02
BD7411G
BU52001GUL
Neomax 44H
BD7411G ROHM
BU52011HFV
BU52015GUL
BU52021HFV
BU52025G
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DN8799MS
Abstract: No abstract text available
Text: Hall ICs DN8799MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8799MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation
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DN8799MS
DN8799MS
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N140 ALLEGRO
Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000
Text: Application Note 27703.1B GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC
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1-508-ALLEGRO
N140 ALLEGRO
HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E
Allegro Hall-Effect ICs
Ultrasonic welding generator
GTS2000
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DN8798MS
Abstract: hall current sensor ic
Text: Hall ICs DN8798MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8798MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation
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DN8798MS
DN8798MS
hall current sensor ic
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hall current sensor ic
Abstract: hall ic
Text: Hall ICs DN8796MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8796MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation
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DN8796MS
DN8796MS
hall current sensor ic
hall ic
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DN8799MS
Abstract: No abstract text available
Text: Hall ICs DN8799MS 3 V operation Hall IC • Overview 0.40 +– 0.10 0.05 1.45 0.65 ± 0.15 Unit: mm The DN8799MS is a 3 V operation Hall IC which includes a Hall element, amplifier circuit, Schmidt circuit, stabilized power supply and temperature compensation
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DN8799MS
DN8799MS
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