Untitled
Abstract: No abstract text available
Text: LH Series • Features • Lifetime:125℃,1000 hrs • Wide temperature range for LZ • Low ESR • Low Impedance ■ • • • • • • Specifications Items Characteristics ±20% M (120Hz,20℃) 6.3~25 VDC -55 ~ +125℃ Capacitance Tolerance Rated Voltage Range (WV)
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120Hz
120Hz
10x16
10x20
10x25
13x20
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NIPPON CAPACITORS
Abstract: CF5732KA CF5732EA CF5732FA CF5732GA CF5732HA CF5732JA nippon ga 32678
Text: CF5732 Series Analog clock CMOS IC NIPPON PRECISION CIRCUITS INC. OVERVIEW FEATURES The CF5732 series are analog clock driver ICs using 32kHz reference frequency of crystal oscillator. Some versions in accordance with the combinations of each motor drive and alarm output characteristics can provide
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CF5732
32kHz
NC9121BE
NIPPON CAPACITORS
CF5732KA
CF5732EA
CF5732FA
CF5732GA
CF5732HA
CF5732JA
nippon ga
32678
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS n ic K ic o n Chip Aluminum Electroiytic Capacitors c o Anti-cleaning solvent O perating T em p eratu re Range "C Long life A pplications Low impedance 2 3 o> <*c o o U) —} Standard type « .2 "C m Features Smaller-sized & ,
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h-105
AK-225AES.
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Untitled
Abstract: No abstract text available
Text: MT24D236 2 MEG X 36. 4 MEG x 18 DRAM MODULE M IC R O N 2 MEG DRAM MODULE X 36, 4 MEG X 18 FAST PAGE MODE MT24D236 LOW POWER, EXTENDED REFRESH (MT24D236 L) FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process
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MT24D236
72-pin
536mW
024-cycle
128ms
MT24D236)
C1992.
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Untitled
Abstract: No abstract text available
Text: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode
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aa35bQ5
BUZ83A
C67078-A1012-A3
a53Sb0S
1487s
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm INDUSTRIAL APPLIC ATIONS H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . Uni t R E L A Y D R IV E ,M O T O R DR IVE AND DC-DC CONVER TER A P P L I C A T I O N S . in mm
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15mfi
D-30A
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Untitled
Abstract: No abstract text available
Text: MICRON I 2 MEG 36, 4 MEG X 2 MEG X MT24D236 18 DRAM MODULE 36, 4 MEG 18 X FAST PAGE MODE MT24D236 LOW POWER, EXTENDED REFRESH (MT24D236 L) FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process
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MT24D236
MT24D236)
MT24D236
72-pin
536mW
024-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS m e , h i con Miniature Aluminum Electrolytic Capacitors O Page BT tow Impedance Longlife AQ PB — 40~ - - H 25‘C High reliability For industrial equipment num ber - 40~ - H O E C Miniature type Permissible - 40— H O E t
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-I05t
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Untitled
Abstract: No abstract text available
Text: * SY10480-8 SY10480-10 16K x 1 ECLRAM SYNERGY SEM ICO NDUCTO R DESCRIPTION FEATURES The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and
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SY10480-8
SY10480-10
SY10480
16384-bit
16384words-by-1-bit,
SY10480-8DCF
SY10480-8DCS
D20-1
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Untitled
Abstract: No abstract text available
Text: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns
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SY10L494-10
SY100L494-10
SY101L494-10
-220mA
10K/100K
T-10FCS
F28-1
SY10L/100L7101L494-10YCS
Y28-1
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D3S85
Abstract: No abstract text available
Text: Philips Components 10101 D ocum ent No. 8 5 3 -0 6 3 7 ECN No. 99799 Date of Issue Ju ne 14, 1990 Status Product Specification Gate Quad 2-lnput OR/NOR Gate with Strobe E C L P roducts ORDERING INFORMATION FEATURES • Typical propagation delay: 2.0ns • Typical supply current - lEE : 20mA
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16-Pin
D3S85
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HA 3089
Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
Text: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL
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Untitled
Abstract: No abstract text available
Text: SEC ffPB10A484 4,096 X 4-Bit 10K ECL RAM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The fiPB10A484 is a very high-speed 10K interface ECL RAM organized as 4,096 words by 4 bits with nonin verted, open-emitter outputs. Two versions with access
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ffPB10A484
fiPB10A484
pPB10A484
400-mil,
28-pin
28-pin
096-wordInput
fiPB10A484
JUPB10A484
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Transistor BFR 80
Abstract: BFR 30 transistor Transistor BFR 30 gh 312 BFR 80 Transistor BFR 90 BFR35 Transistor BFR 35 Transistor BFR 90 application Q62702-F347-S1
Text: BFR 35, BFR 35 A NPN Transistor fo r low-noise RF amplifiers and high-speed switching applications P re lim in a ry d a ta BFR 35 and BFR 35 A are epitaxial NPN silicon planar UHF transistors in a plastic case 23 A 3 DIN 41 869 SOT-23 for use in film circuits up into the GHz range, e.g.
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OT-23)
Q62702-F347
Q62702-F347-S1
110JB
BFR35
temperatur70
-22e-0
Transistor BFR 80
BFR 30 transistor
Transistor BFR 30
gh 312
BFR 80
Transistor BFR 90
Transistor BFR 35
Transistor BFR 90 application
Q62702-F347-S1
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40N55
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS nickicon Chip Aluminum Electrolytic Capacitors OP age number W P » C hiptype 4,5mmL, Bi-poiarized Chip type 5.5mmL, Bi-polarized " U N O . .» Chip type Bi-polarized Law Profits
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l-105
40N55
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Untitled
Abstract: No abstract text available
Text: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.
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SY10L494-7/8/10
SY100L494-7/8/10
101L494-7/8/10
-180m
10K/100K/
SY10L/100L/101L494-7PCS
P28-1
F28-1
SY10L/10017101L494-7YCS
SY10L/100L/101L494-7FCS
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Untitled
Abstract: No abstract text available
Text: 19-0048; Rev 0; 12/92 , Precision Quad SPST, CMOS Analog Switches 1.1 This specification covers the detail requirements for three quad SPST CMOS switches. These cir cuits are processed in accordance with MIL-STD-883 and are fully compliant to paragraph 1.2.1.
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MIL-STD-883
DG411A
/883B
DG412A
DG413A
16-Pin
20-Pin
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Untitled
Abstract: No abstract text available
Text: Preliminary HN624316 Series 16M 1M x 16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T he H ita c h i H N 6 2 4 3 1 6 is a 1 6 -M e g a b it C M O S M a sk Program mable Read Only M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The high density and high speed provide enough capacity and
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HN624316
16-bit)
16-bit
32-bit
42-pin
44-lead
48-lead
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Untitled
Abstract: No abstract text available
Text: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1 .8 -3 .3V • Ultra-low active power • Low standby power • Easy memory expansion with C S i/C S 2 and OE features • TTL-com patible inputs and outputs • Automatic power-down when deselected
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CY62138V
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Untitled
Abstract: No abstract text available
Text: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.
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Y100L494-7/8/10
SY101L494-7/8/10
-180mA
10K/100K/
FlatSY10L/100L/101L494-7PCS
P28-1
F28-1
Y28-1
SY10L/100L/101L494-8PCS
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SY101484-4
Abstract: SY10484-5CCF SY101484-6FCF S2811
Text: * SYNERGY SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM S E M IC O N D U C TO R DESCRIPTION FEATURES The Synergy SY10/100/101484 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized
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SY10484-4/5/6
SY100484-4/5/6
SY101484-4/5/6
10K/100K
SY10/100/101484
SY100484-4FCF
SY100484-4SCF
SY100484-MCF
SY101484-4FCF
SY101484-4SCF
SY101484-4
SY10484-5CCF
SY101484-6FCF
S2811
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Untitled
Abstract: No abstract text available
Text: HM10494 Series 16384-word 4-bit Fully Decoded Random Access Memory x Description Th e H M 10 4S 4 is EC L 10K compatible, 16384-word by 4-bits read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.
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HM10494
16384-word
16384-word
16384-w
DG-28N)
HM10494F-10
HM10494F-12
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {t1EMORY> TL D E | 0257550 DDSbllB b | Am10 4 6 9 /Am100469 5 1 2 x 9 ËCL Tag Buffer Am10469/Am100469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast address to comparator output MISS Replaces six or mofe integrated circuits vyith a single
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/Am100469
Am10469/Am100469
24-pin
512x9
WF021890
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Untitled
Abstract: No abstract text available
Text: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on
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SY10484-3
500ps
-350mA
SY10484
16384-bit
C28-1
F28-1
S28-1
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