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    H882 TRANSISTOR Search Results

    H882 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    882 transistor

    Abstract: transistor 882 2SD882HS882H882 h882 hs882 2SD882
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 882 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C100AJ-00 芯片厚度：240±20µm 管芯尺寸：1000x1000µm 2 焊位尺寸：B 极 215×215µm 2；E 极 210×210µm 2


    Original     		PDF 100mm C100AJ-00 2SD882HS882H882 O-126TO-126ML 30VIE 10VIE 882 transistor transistor 882 2SD882HS882H882 h882 hs882 2SD882