H5N2005DS Search Results

H5N2005DS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H5N2005DSTL-E		Renesas Electronics Corporation	Nch Single Power Mosfet 200V 6A 650Mohm DPAK(S)/To-252

H5N2005DS Price and Stock

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Renesas Electronics Corporation H5N2005DSTL-E Trans MOSFET N-CH 200V 6A 3-Pin DPAK T/R (Alt: H5N2005DSTL-E)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	H5N2005DSTL-E			28 Weeks	18,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

H5N2005DS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H5N2005DS		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
H5N2005DS		Renesas Technology	Silicon N Channel MOS FET		Original	PDF

H5N2005DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
H5N2005DL Abstract: H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0300 Rev.3.00 Mar 05, 2009 Features • Low on-resistance • Low drive power • High speed switching Outline RENESAS Package code: PRSS0004ZD-B Package name: DPAK(L -(2) )	Original	H5N2005DL, H5N2005DS REJ03G1104-0300 PRSS0004ZD-B PRSS0004ZD-C H5N2005DL H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C	PDF
H5N2005DSTL-E Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0200 Previous: ADE-208-1373 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B	Original	H5N2005DL, H5N2005DS REJ03G1104-0200 ADE-208-1373) PRSS0004ZD-B PRSS0004ZD-C H5N2005DSTL-E H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power	Original	H5N2005DL, H5N2005DS R07DS0796EJ0400 REJ03G1104-0300) PRSS0004ZD-B PRSS0004ZD-C	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power	Original	H5N2005DL, H5N2005DS R07DS0796EJ0400 REJ03G1104-0300) PRSS0004ZD-B PRSS0004ZD-C	PDF
Hitachi DSA0076 Abstract: H5N2005DL H5N2005DS Silicon N Channel MOS FET High Speed Power Switching dpak code Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1373 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2005DS G 1 2	Original	H5N2005DL, H5N2005DS ADE-208-1373 H5N2005DL Hitachi DSA0076 H5N2005DL H5N2005DS Silicon N Channel MOS FET High Speed Power Switching dpak code	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
H5N2005DSTL-E Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C NEC sc-63 date code Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H5N2005DL Abstract: H5N2005DS Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF