Am386
Abstract: No abstract text available
Text: 34 AM S/UN 1x10GE XP ASSP Telecom Standard Product Data Sheet Released 10 Ma y ,2 00 5 02 :2 4: PM3393 Tu es da y, S/UNI 1x10GE XP Data Sheet Do wn lo a de d by sa tis h d of ag er rt on SATURN® User Network Interface For 10 Gigabit Ethernet LAN PHY with XAUI
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1x10GE
PMC-2020726,
PM3393
26x26
Am386
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AMD Athlon 64 X2
Abstract: amd athlon 27648 AMD xp datasheet AM2 athlon AMD 700 chipset amd am2 pin diagram AMD am2 socket AMD Athlon 64 AMD K6 AMD Athlon 64 X2 thermal
Text: Preliminary Information AMD Athlon XP Processor Model 8 Data Sheet TM Publication # 25175 Rev. H Issue Date: March 2003 Preliminary Information 2001–2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced
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25175H--March
AMD Athlon 64 X2
amd athlon 27648
AMD xp datasheet
AM2 athlon
AMD 700 chipset
amd am2 pin diagram
AMD am2 socket
AMD Athlon 64
AMD K6
AMD Athlon 64 X2 thermal
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CU4R
Abstract: UCVC ccb software
Text: PMC-Sierra, Inc. ,V VX W U XP EH 1 FW R HQ 2 RF XP H ' EH U 30 & 8VHU•V 0DQXDO Preliminary 3U RS UL HW DU \ DQ G FR Q R EL W V IL GH QW LD OW & 6 7 UD II LF LH UU D ,Q F 70 30 $ DQ G IR U HQ W RP HU V· UL VH YH U HU QD
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PM73487
PMC-980658:
CU4R
UCVC
ccb software
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A1DK
Abstract: No abstract text available
Text: Device Bright Red H Orange (E) Am ber (A) Yellow (Y) Green (G) Package Xp = 695 nm Xp = 6 35 nm Xp = 6 10 nm Xp = 590 nm Xp = 570 nm Outline Lamp P/N Lamp P/N Lamp P/N Lamp P/N Lamp P/N C S L -H 6 3 0 5 H 5 C SL -H 6 3 0 5 E 5 C S L -H 6 3 0 5 A 5 C S L -H 6 3 0 5 Y 5
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H6310G
A1DK
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LL20
Abstract: A1GK
Text: * Iv unit = mcd @ I f - 10 m A. All the lens are colored diffused. C S L -W 1 1 4 X 4 is water clear. Device Bright Red H Red (R) Orange IE) Am ber (A) Yellow <Y) Green (G) Device Package X p = 6 9 5 nm Xp = 6 55 nm Xp = 6 35 nm Xp = 6 1 0 nm Xp = 5 9 0 nm
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CSL-W114X4
CSL600R1GK
CSL600E5GK
600Y1GK
CSL-600G1GK
620H1DT
620R1DT
620E5DT
620A1DT
620G1DT
LL20
A1GK
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CSD-524H
Abstract: 514G-1 514a1 CSD-524E
Text: Package Outline X o S. « IO s 2 Polarity Device Super-bright Red R1/ Orange IE / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber (A) Bright Yellow CT) Bright Green (F) Package \p = 660 nm Xp = 655/695 nm Xp = 635/610 nm Xp = 590/585 nm CSD 5425R-21
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5425R-21
5425H
CSD-5425A
CSD-5425Y
CSS-5610R-21
CSS-5610D-21
CSS-5611D-21
SS-5611H-21
CSS-5610H-21
CSS-5610E-11
CSD-524H
514G-1
514a1
CSD-524E
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Untitled
Abstract: No abstract text available
Text: LEDTRONICS, INC THE FUTURE OF L IG H T Lum inaire Photometric Report Polar Candela Distribution Filename: LED48T8SM-276-XP W-001WF Manufacturer LEDTRONICS Luminaire FROSTED LENS, 18,6 W, 120VAC Luminaire Cat LED48T8SM-276-XP W-001WF Lamp . LUMEN RATING: 1288.7Lms.
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LED48T8SM-276-XPW-001WF
120VAC
LED48T8SM-276-XPW-001WF
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CSK-655SH
Abstract: CSK848E
Text: LED Clock/Frequency Display Package Outline - I 9 iD <2 i5‘ ~ ar mm inch Drive M ode Polarity Device 7.7 Duplex SuperBright Red (H) Device Orange (E) Green (G) Bright Red(D) Package Xp = 6 9 5 nm \p = 6 6 0 nm \p = 6 3 5 nm Xp = 570 nm CSK-355H-1 2 CSK-355D-1 2
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CSK-355H-1
CSK-355D-1
CSK-355E-1
CSK-355G-12
355H-24
355D-24
355E-24
CSK-355G-24
CSK-655SDN-1
SK-655SEN
CSK-655SH
CSK848E
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CL-200YG
Abstract: CL-200 citiled CL-200 IR CL-200r citiled CL-200R CL-200G
Text: •Features ■ $ » 1 .8 o th mounting available; namely, upright and right-angle mounting 2. Mono-color type 2. 3 .51-ïï5^;Îi3:3.e{L xP.4 W)xp.4(H)mm 3. Dim ensions:3.2(L)x2.4(W )x2,4(H)mm, being a standard size n ^ rT o CHIP LEDs CITILED 4. The package provides a reflector area around
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CL-200
CL-200UR/HR
CL-200YG
CL-200 citiled
CL-200 IR
CL-200r citiled
CL-200R
CL-200G
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ADC0820 application note
Abstract: 20pin 4bit adc Flash-ADC ADC0820 ADC0820BNED ADC0820BNEN ADC0820BSAD ADC0820BSAN ADC0820BSEF ADC0820CNED
Text: PHILIPS INTERNATIONAL 5&E ]> • 711DB2LJ QQS111S LIT H P H I N Philips Semlconductors-Signetics Linear Products Product specification 8-Bit, high-speed, xP-compatible A/D converter with track/hold function Anrnfwn AUUUWU PIN CONFIGURATION DESCRIPTION FEATURES
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711062b
DDS111S
ADC0820
100mV/
ADC0820,
711Dfl5b
ADC0820 application note
20pin 4bit adc
Flash-ADC
ADC0820BNED
ADC0820BNEN
ADC0820BSAD
ADC0820BSAN
ADC0820BSEF
ADC0820CNED
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LN68
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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LN69
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)
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TRansistor A 940
Abstract: NJL5125D NJL1110B NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL5126D NJL112IB
Text: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE NJL1104B NJL1110B NJL1112B NJL1120B NJL1121B NJL1122B NJL1120F NJL1121F DESCRIPTION PD [mW] 150 150 225 170 170 170 170 170 GaAs Infrared LED GaAlAs Infrared LED wmmW&mmmm IF H I VR m Xp [nm] 100 100
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NJL1104B
NJL1110B
NJL1112B
NJL1120B
NJL112IB
NJL1122B
NJL1120F
NJL1121F
NJL5154D*
NJL5154M*
TRansistor A 940
NJL5125D
NJL1104B
NJL1112B
NJL1120B
NJL1120F
NJL1121F
NJL5126D
NJL112IB
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transistor NEC D 587
Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS
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uPA802T
2SC4227)
transistor NEC D 587
LS 1691 BM
l 9143
NEC D 587
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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NJL5126D
Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Text: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170
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NJL1110B
NJL1112B
NJL1120B
NJL112IB
NJL1122B
NJL1120F
NJL1121F
NJL5155M*
NJL5156M*
NJL5127D
NJL5126D
NJL5125D
NJL1121F
NJL6103B
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ELD323R
Abstract: ELD-323R ELS-1720 ELS1723P ELS 1720p D305HWB S1001HWA S1006IDR 1723R els-1720y
Text: E4 D EVERLIGHT ELE CTRONICS LED DIGIT DISPLAYS Type No. and Remark Display Size New Modal No. Chip ' Material Emitted - Color C.C. or C .K Xp nm (* ) 1.0 inch Single Digit n £ = Jn H ELS-1723B GaAsP Red S1001HWA * ELS-1723P GaP Bright Red S1M1GWA • ELS-1723G
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S1001RWA
ELS-1723R
S1001HWA
ELS-1723P
S1001GWA
ELS-1723G
S1001YWA
ELS-1723V
25mm/
ELD323R
ELD-323R
ELS-1720
ELS1723P
ELS 1720p
D305HWB
S1001HWA
S1006IDR
1723R
els-1720y
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Untitled
Abstract: No abstract text available
Text: T -1 3/4 In G a A lP U ltra B rig h t LED TLOH 156P Product Features - • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens M A XIM UM RATINGS (Ta = 2 5 X ) C H A R AC TER ISTIC Forward Current
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00006CH
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OED-PCC-9P5
Abstract: 9P5A photo conductive cells vw t4
Text: photo resistive/conductive cells OED-PCC-9P5-2 Package AC V Style Max T4.2 Ceramic 100 10 AC(Y) % ty !e * 'H oc' T4.2 Ceramic 100 Package Style Max T4.2 Ceramic Maiffcur* ftaMMMtoftlte ment XP (nm) io Lux (Volts) Response Min Max 100 550 tKsmuf* ment •kP (raa)
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g1962-01
Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt
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100lux
2856K
1Q-90%
G1117
G1120
G2711
G1735
G1736
G1737
G1738
g1962-01
u1116
G1126-02
hamamatsu PIN TO5
3x1015
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Untitled
Abstract: No abstract text available
Text: 122= 231 T ' 1 In G a A lP U ltra B rig h t LED High Perform ance Ultra Bright LEDs TLPGA262 # 3 -8 ± 0 .2 # 3 -2 ± 0 .2 Product Features - rFsl • InGaAlP Technology • T-1 3 mm Package CM -H io tô • High Intensity Green Light (Xp = 562 nm) Emission
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TLPGA262
00006CH
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sf p101
Abstract: ci 565 333VGT P101 HRC-3 000GD 494VGT 333HRD2/H
Text: EVERLIGHT ELECTRONICS 3QE D m The Super 3M1S703 0Æ R L1G H T C O M M ITTED T O H I-Q U ALITY 0D0QDfl4 T WÊ 3 0 <T-1 Round Type LEDs Lens Water Clear Tinted Transparent Tinted Diffused Iv mcd) 20 mA Wave Length Vf(V) 20 mA Min. Typ. Xp(nm) Typ. 300 180
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000GDÃ
70uminous
sf p101
ci 565
333VGT
P101
HRC-3
000GD
494VGT
333HRD2/H
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Untitled
Abstract: No abstract text available
Text: T -1 3A In G a A lP U ltra B rig h t LED Ultra Bright LEDs High Perform ance TLOUI8OP Product Features • InGaAlP Technology • T-1V« 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens • Narrow Radiation Pattern
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00006CH
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