TB162
Abstract: LK401 10NF 18PF 47PF 47UF pot B 10K ohm 5 pin 850mu UT75-10 UT85-5
Text: T B - 1 6 2 L K 4 0 1 F r e q v s G a i n /E f f i c i e n c y ; V d s = 2 8 V d c I d q = . 8 A 16 100 90 14 80 70 Gain 12 Pout fixed at 60W 60 10 50 40 8 30 Efficiency 6 20 50 100 150 200 250 300 350 400 450 500 550 F r e q i n M H z TB-162 LK401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma
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TB-162
LK401
250MHz
28Vdc
800ma
30MHz
TB162
10NF
18PF
47PF
47UF
pot B 10K ohm 5 pin
850mu
UT75-10
UT85-5
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Untitled
Abstract: No abstract text available
Text: Sullins Edgecards .100” [2.54 mm] Contact Centers, .610” [15.49 mm] Insulator Height, Dip Solder/ Wire Wrap/Right Angle/Card Extender for .093”[2.36] or .125”[3.18] Mating PCB SPECIFICATIONS Sullins Edgecards • Accommodates .093” ± .008” [2.36 ± .20] or
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Untitled
Abstract: No abstract text available
Text: Sullins Edgecards .125” [3.18 mm] Contact Centers, .610” [15.49 mm] Insulator Height, Dip Solder/Wire Wrap/Right Angle for .093” [2.36] or .125” [3.18] Mating PCB SPECIFICATIONS Sullins Edgecards • Accommodates .093” ± .008” [2.36 ± .20] or .125” ± .008”[3.18 ± .20] mating PCB
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EBC49DCWN-S420
Abstract: S420
Text: Sullins Edgecards Sullins Edgecards .100” [2.54 mm] Contact Centers, .610” [15.49 mm] Insulator Height, [ISA] Dip Solder/Wire Wrap/Right Angle SPECIFICATIONS READOUT DUAL D POLARIZING KEY PLC-K1 • Accommodates .062” ± .008” [1.57 ± .20] PC board
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EBC18DCWN-S524
EBC31DCWN-S524
EBC49DCWN-S518
EBC31DCWN-S371
EBC49DCWN-S420
EBC49DCAN-S605
EBC49DCWN-S420
S420
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
200ns
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n48 rm6
Abstract: rm10 N67 DIN IEC 600 68-2-20 N48-400 RM6 N26 1000 Siemens matsushita b5 siemens rm8 T35 rm14 N67 RM8 N67 rm14 n41
Text: RM 3 Kern B65817 ● Ohne Mittelloch für Übertrageranwendungen Magnetische Formkenngrößen pro Satz Sl/A le Ae Amin Ve = 1,8 mm–1 = 15,1 mm = 8,4 mm2 = 6,4 mm2 = 128 mm3 Satzgewicht ca. 0,55 g ohne Luftspalt AL-Wert µe Bestellnummer VE N30 T38 nH 1600 + 40/– 30%
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B65817
B65817-J-Y30
B65817-J-Y38
B65818
B65887-P
FRAME4/u/intranet/dtp4/SMC-CD/FER/RM14
B65887-P-R30
B65887-P-R49
B65887-P-R67
B65887-P-R87
n48 rm6
rm10 N67
DIN IEC 600 68-2-20
N48-400
RM6 N26 1000
Siemens matsushita b5
siemens rm8 T35
rm14 N67
RM8 N67
rm14 n41
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Untitled
Abstract: No abstract text available
Text: Sullins Edgecards .125” [3.18 mm] Contact Centers, .610” [15.49 mm] Insulator Height Dip Solder/Wire Wrap/Right Angle SPECIFICATIONS Sullins Edgecards • Accommodates .062” ± .008” [1.57 ± .20] PC board Consult factory for .031” ± .008” [.79 ± .20],
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Untitled
Abstract: No abstract text available
Text: Sullins Edgecards .156” [3.96 mm] Contact Centers, .610” [15.49 mm] Insulator Height Dip Solder/Wire Wrap/Right Angle/Card Extender SPECIFICATIONS Sullins Edgecards • Accommodates .062” ± .008” [1.57 ± .20] PC board See page68/69 for .093” ± .008” [2.36 ± .20] and .125” ± .008”
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page68/69
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kd 2902
Abstract: k 4212 ks D 13007 K EBM10DCSN-S288 KD 109
Text: Sullins Edgecards .156” [3.96mm] Contact Centers, .610” Insulator Height Dip Solder/Wire Wrap/Right Angle/Card Extender SPECIFICATIONS Sullins Edgecards • Accommodates .062” ± .008” [1.57 ± .20] PC board See page 64/65 for .093” ± .008” [2.36 ± .20] and .125” ± .008”
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Untitled
Abstract: No abstract text available
Text: Sullins Edgecards .156” [3.96 mm] Contact Centers, .610” [15.49 mm] Insulator Height Dip Solder/Wire Wrap/Right Angle/Card Extender SPECIFICATIONS Sullins Edgecards • Accommodates .062” ± .008” [1.57 ± .20] PC board See page68/69 for .093” ± .008” [2.36 ± .20] and .125” ± .008”
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page68/69
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rhr150120
Abstract: RHRU150120
Text: RHRU150120 Data Sheet Title HR 501 bt 0A, 00V pert ode utho rpoon, pert al odes vache ergy ted, itch wer pes, wer File Number 4049.1 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns). It has half the recovery time of
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RHRU150120
RHRU150120
100ns)
100ns
rhr150120
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EI1805TBOPL
Abstract: 30M30 specifications of scr EI3015TBOPS EI3015TBOPL EI1805TBCPL
Text: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, AC, M12, M18, M30 • Thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
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STTA1512P
Abstract: STTA1512PI
Text: STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA1512P/PI
STTA1512P
STTA1512PI
STTA1512P
STTA1512PI
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Untitled
Abstract: No abstract text available
Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Sensing distance: 2 to 15 mm • Power supply: 20 to 250 VAC • Output: SCR, make or break switching
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M12x1
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Untitled
Abstract: No abstract text available
Text: EUPEC blE D • 3 M 0 3 E ^ 7 0 0 D 1 1 2 2 Tb^ H U P E C T T250 N, TD 250 N, DT250 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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DT250
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ScansU9X26
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
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ry-34B
ry-345
B03flyujH0e
ry-34E
1000i/a
ScansU9X26
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Untitled
Abstract: No abstract text available
Text: rEHEPATOPHblM TETPOfl ry-34B TETRODE T e H e p a T o p H b iM T e T p o fl ry-345 n p e flH a 3 - HaMeH flnn paôOTbi b pex<MMe LunpoKononocHoro ycuneHMfl moihhoctu b flnana30He nac to t flo 250 M r l b paflMOTexHunecKux ycTpoÜ C TB aX. CXEMA COEflMHEHMfl
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ry-34B
ry-345
flnana30He
B03flyujH0e
ry-34E
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Untitled
Abstract: No abstract text available
Text: EL2012 £ ig tn tB C HIGH PERFO RM ANCE ANALOG INTEGRATED CIRCUITS EL2012 ClOSB l LOOP BuffCV F e a tu re s G en era l D e sc r ip tio n • 80 M H z b a n d w id th w ith 50ft load • 250 m A o u tp u t c u rre n t T h e E L2012 is a h ig h speed b ip o la r m o n o lith ic b u ffe r d esig n ed
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EL2012
EL2012
L2012
m2012
M2012
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION A L T E R A T 1O N ISSUE E C 0 E 2 103 // 2 123 ( // 2 153 ( // 2 183 ( // 2223 ( // 2273 ( // 2333 ( // 2393 ( // 24 73 ( H 2563( // 2683 ( l i 2823 ( h 2104( it 2 124 ( H 2154( l i 2 184 ( // 2224 ( li 2274 ( h 2334( h 2394( il 2474 (
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3000Mfi-uF
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Untitled
Abstract: No abstract text available
Text: " [C F C T E L INDUCTORS PRODUCTS INC. 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L ENCAPSULATED INDUCTORS Designed to meet the requirements of MIL-C-15305, Grade 1. Class B ( - 5 5 ° C to +125°C). The rated temperature rise is 35°C above an ambient of 90°C.
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MIL-C-15305,
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3C15A
Abstract: GTS FC-618A
Text: T e m ic SMD15N06 Siliconix _ N-Channel Enhancement-Mode Transistor 175°C Maximum Junction Temperature Product Summary jÜ H l FB M artfP} 60 0.10 15 D DPAK TO-252 D n°u G S S Top View N-Channel M OSFFT Absolute Maximum Ratings (Tc = 25° C Unless Otherwise Noted)
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SMD15N06
O-252)
3C15A
GTS FC-618A
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Untitled
Abstract: No abstract text available
Text: T HIRD ANGLE ITEM PROJECTION RATED CODE E C Q E 21 0 3 IB 2 12 3 TB « CAP. V OLTAGE ß F 2 5 0 VDC 0 .0 D I MENS 1 * L 1 0 3) 0 . 0 1 2 1 0. 8 1 2 3) H 4. 3 7. 4 4. 4 7. 5 " 2 15 3 TB 0 . 0 1 5 1 5 3) « " 2 18 3 TB 0 . 0 1 8 1 8 3) « « 2 2 2 3 TB 0 .0 2 2
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RURU150120
Abstract: 1200V Ultrafast Power Rectifier
Text: RURU150120 interrii J a n u a ry . D ata S h eet mi File N u m b er 4049.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
TA49073.
O-218
RUR150120
1200V Ultrafast Power Rectifier
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Untitled
Abstract: No abstract text available
Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)
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IDT7M4048
IDT7MB4048
400jiA
32-pin,
IDT7M4048/7MB4048
7MB4048SXXP
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