module bsm 20 gp 60
Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
Text: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power
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mid-80s,
products/36/3622
module bsm 20 gp 60
module bsm 25 gp 120
siemens igbt BSM 300
Eupec bsm 25 gb 120
siemens igbt BSM 50 gp 120
siemens igbt BSM 100 gb
siemens igbt BSM 75 gb 100
eupec igbt BSM 100 gb
Eupec bsm 75 gb 120
IGBT full bridge
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Untitled
Abstract: No abstract text available
Text: ASC HVSC High Voltage Snubber Capacitors are designed with very high surge/peak current capabilities for demanding low-to-medium voltage applications such as traction inverters, industrial inverters, adjustable-speed/variablefrequency drives and rail grid interties where GTOs and IGCTs
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068uF
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GTO thyristor Curve properties
Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by
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30J4502
35L4502
GTO thyristor Curve properties
ABB 5SGY 35L4502
ABB 5SGy
GTO thyristor ABB
snubber IGCT
ABB GTO gate unit
gto dc converter abb
GTO thyristor driver
igct abb
diode DS1
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MTD48
Abstract: V44A
Text: April 2002 COP8CBE9/CCE9/CDE9 8-Bit CMOS Flash Microcontroller with 8k Memory, Virtual EEPROM, 10-Bit A/D and Brownout Reset General Description The COP8CBE9/CCE9/CDE9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 8k Flash memory and advanced features including Virtual EEPROM, A/D, High Speed Timers, USART, and Brownout
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10-Bit
MTD48
V44A
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MTD48
Abstract: MTD56 V44A V68A sine wave inverter 220v
Text: April 2002 COP8CBR9/COP8CCR9/COP8CDR9 8-Bit CMOS Flash Microcontroller with 32k Memory, Virtual EEPROM, 10-Bit A/D and Brownout General Description The COP8CBR/CCR/CDR9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 32k Flash memory and advanced features including Virtual EEPROM, A/D, High Speed Timers, USART, and Brownout
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10-Bit
MTD48
MTD56
V44A
V68A
sine wave inverter 220v
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GTO ABB 5SGA 2046
Abstract: IG 2200 19
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J4505
5SYA1204-04
CH-5600
GTO ABB 5SGA 2046
IG 2200 19
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COP8FGR728Q3
Abstract: COP8FGXY28M8 COP8FGXY28N8 COP8FGXY40N8 M28B
Text: COP8FG Family 8-Bit CMOS ROM Based Microcontrollers with 8k to 32k Memory, Two Comparators and USART General Description Note: COP8FG devices are 15 MHz versions of the COP8SG devices. The COP8FGx5 Family ROM based microcontrollers are highly integrated COP8 Feature core devices with 8k to
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Untitled
Abstract: No abstract text available
Text: COP8SGx7 8-Bit One-Time Programmable OTP Microcontroller General Description CPU Features The COP8SGE7/COP8SGR7 OTP microcontrollers are members of the COP8 feature family using an 8-bit single chip core architecture. These devices are fabricated in a
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16-bit
conf959
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5SDF01R2501
Abstract: 5SGA 5SGA30J2501 RTK 031
Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes
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01R2501
05D2501
05D2501
15F2502
20H2501
25H2501
30J2501
20H4502
11F2501
03D4501
5SDF01R2501
5SGA
5SGA30J2501
RTK 031
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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aaaa343
O-220
BY359â
bbS3131
T-03-17
BY359
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M1045
Abstract: BY359 M104 M1040
Text: N AMER PHILIPS/DISCRETE 55E D • bbS3T31 □□22343 Ö ■ MAINTENANCE TYPE B Y359 SERIES J 7 =^3 -1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T0-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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bbS3131
BY359
T0-220
BY359-
0q22350
t-03-17
M1050
M1045
M104
M1040
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BY359-1000
Abstract: BY359
Text: BY359 SERIES M AIN TEN ANC E TYPE J v_ FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, featuring fast recovery times. They are intended fo r use as an anti-parallel diode to GTOs and similar high-voltage switches,
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BY359
BY359--
BY359-1000
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Untitled
Abstract: No abstract text available
Text: SbE D • 711002b DDM114Ö Ibö HIPHIN BY359 SERIES MAINTENANCE TYPE 5bE D PHILIPS INTERNATIONAL T-03 ' / 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T0-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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711002b
DDM114Ö
BY359
T0-220
TQ-220AC
t-03-i?
7110flSb
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GE capacitor CATALOG
Abstract: A97F8622 GE commutation capacitors A97F8672 SCR 131- 6 W 58 A97F8614 a97f8615 A97F8616 A97F8620 SCR 131- 6 W 40
Text: SCR Commutation Capacitors 97F8600 Series 600 to 1500 Volts Peak This family of capacitors is designed for high-current applications, such as 1 SCR commutation, (2) snubbers for SCRs, GTOs and other power semiconductors, and (3) for any other circuits where
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97F8600
A97F8614
A97F8615
A97F8616
A97F8617
A97F8618
A97F8619
A97F8620
A97F8621
GE capacitor CATALOG
A97F8622
GE commutation capacitors
A97F8672
SCR 131- 6 W 58
SCR 131- 6 W 40
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform
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00V/200A.
00-4000A
300-6000V
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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motor control
Abstract: toshiba motor Inverter toshiba
Text: Industrial M o to r Control System s From large to small, power variation is in high demand for the industrial motor control systems. Generally, Toshiba applies GTOs in large-capacity motor control systems of more than several hundred kilowatts kW . In general
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Inverter high voltage power transistor
Abstract: Insulated Gate Bipolar Transistors motor control power transistor motor control
Text: Industrial M otor Control System s From large to small, power variation is in high demand for the industrial motor control systems. Generally, Toshiba applies GTOs in large-capacity motor control systems of more than several hundred kilowatts kW . In general
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M1047
Abstract: BY359 M1045 M1048
Text: N AMER PHILIPS/DISCRETE E5E D • bbSBTHI QGSE343 fl ■ MAINTENANCE TYPE B Y 359 SERIES 7=03-; 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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0D2S343
BY359
T0-220
BY359-
T-03-17
M1047
M1045
M1048
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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FSV 052
Abstract: No abstract text available
Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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05D2505
11F2501
07F4501
13H4501
5SDF14H4505
10H6004
01R2501
01R2502
01R2503
01R2504
FSV 052
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TD4792
Abstract: TD4902 1N4786 1N4815 T0100 TD4791 TD4797 1N481
Text: TELEDYNE EÒE COMPONENTS a= J17baH D Q Q Q bb Sâ 3 •_ _ T r Q 7 " / ?- LOW LEAKAGE TD4786 THRU TD4815 SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES GEOMETRY 415 Replaces 1N4786 & 1N48,15 DO-7 Package GtossBody Dumef Leads, Treied
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T-07-
1N4786
1N4815
T0100
DO-14
125MAX
Ope0241
TD4809
ID4909
ID4910
TD4792
TD4902
1N4786
1N4815
TD4791
TD4797
1N481
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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COP8SG
Abstract: TE-32 44-PIN COP8SGR728Q3 M28B N28B
Text: ß COP8SGx7 Family 8-Bit CMOS OTP Microcontrollers with 8k or 32k Memory, Two Comparators and USART General Description Note: C O P 8S G x7 devices are lo rm -fit-fun ction com pat ible supersets of th e C O P888xG /C S and C O P87L88xG Fam ily devices, and are replacem ents for th e s e in new
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COP888xG/CS
COP87L88xG
44-Lead
COP8SGR744J3
EL44C
COP8SGx744Vx
COP8SGx744VEJx
VEJ44A
COP8SG
TE-32
44-PIN
COP8SGR728Q3
M28B
N28B
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