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    Text: TOSHIBA GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30JB11 U nit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf= 0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)


    OCR Scan     		PDF GT30J311 GT30JB11 30//s TjS125Â