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Samsung Electro-Mechanics CIGT201610LH2R2MNE FIXED IND 2.2UH 1.8A 139MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CIGT201610LH2R2MNE	Reel	206,799		3,000	1 - 10 - 100 - 1000 - 10000 $0.07464	Buy Now
	CIGT201610LH2R2MNE	Cut Tape	206,799		1	1 $0.18 10 $0.139 100 $0.1077 1000 $0.08358 10000 $0.08358	Buy Now
	CIGT201610LH2R2MNE	Digi-Reel	206,799		1	1 $0.18 10 $0.139 100 $0.1077 1000 $0.08358 10000 $0.08358	Buy Now
Susumu Co Ltd RGT2012P-2490-B-T5 RES 249 OHM 0.1% 1/10W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT2012P-2490-B-T5	Digi-Reel	19,587		1	1 $0.34 10 $0.244 100 $0.1702 1000 $0.11412 10000 $0.11412	Buy Now
	RGT2012P-2490-B-T5	Cut Tape	19,587		1	1 $0.34 10 $0.244 100 $0.1702 1000 $0.11412 10000 $0.11412	Buy Now
	RGT2012P-2490-B-T5	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.0875	Buy Now
Susumu Co Ltd RGT2012P-153-B-T5 RES 15 KOHM 0.1% 1/10W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT2012P-153-B-T5	Cut Tape	8,840		1	1 $0.34 10 $0.244 100 $0.1702 1000 $0.11412 10000 $0.11412	Buy Now
	RGT2012P-153-B-T5	Digi-Reel	8,840		1	1 $0.34 10 $0.244 100 $0.1702 1000 $0.11412 10000 $0.11412	Buy Now
	RGT2012P-153-B-T5	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.0875	Buy Now
Susumu Co Ltd RGT2012P-303-B-T5 RES 30 KOHM 0.1% 1/10W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT2012P-303-B-T5	Digi-Reel	3,081		1	1 $0.22 10 $0.161 100 $0.1108 1000 $0.0875 10000 $0.0875	Buy Now
	RGT2012P-303-B-T5	Cut Tape	3,081		1	1 $0.34 10 $0.246 100 $0.1718 1000 $0.11519 10000 $0.11519	Buy Now
Susumu Co Ltd RGT2012P-512-B-T5 RES 5.1 KOHM 0.1% 1/10W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT2012P-512-B-T5	Digi-Reel	2,935		1	1 $0.34 10 $0.244 100 $0.1702 1000 $0.11412 10000 $0.11412	Buy Now

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GT20 Datasheets (122)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-20	MCE / KDI	ATTENUATOR, PIN DIODE	Original	PDF
GT20	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
GT20	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT200	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT2000-10000A-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 10000psi Range: Absolute Type	Original	PDF
GT2000-10000G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 10000psi Range: Sealed Gage Type	Original	PDF
GT2000-10000T-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 10000psi Range: True Gage Type	Original	PDF
GT2000-1000A-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 1000psi Range: Absolute Type	Original	PDF
GT2000-1000G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 1000psi Range: Sealed Gage Type	Original	PDF
GT2000-100G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 100psi Range: Sealed Gage Type	Original	PDF
GT2000-100T-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 100psi Range: True Gage Type	Original	PDF
GT2000-10A-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 10psi Range: Absolute Type	Original	PDF
GT2000-10G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 10psi Range: Sealed Gage Type	Original	PDF
GT2000-15000G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 15000psi Range: Sealed Gage Type	Original	PDF

GT2000-15000T-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 15000psi Range: True Gage Type	Original	PDF
GT2000-1500A-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 1500psi Range: Absolute Type	Original	PDF
GT2000-1500G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 1500psi Range: Sealed Gage Type	Original	PDF
GT2000-15G-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 15psi Range: Sealed Gage Type	Original	PDF
GT2000-15T-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 15psi Range: True Gage Type	Original	PDF
GT2000-20000A-000	Stellar Technology	Pressure Sensor: Transmitter: 0 to 20000psi Range: Absolute Type	Original	PDF

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GT20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GT20G101 Abstract: No abstract text available Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT20G101 2-10S2C
GT20J311 Abstract: No abstract text available Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)	Original	PDF	GT20J311 2-16H1A GT20J311
transistor equivalent 20j321 Abstract: gt20j321 equivalent 20j321 gt20j321 20j32 Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT20J321 transistor equivalent 20j321 gt20j321 equivalent 20j321 gt20j321 20j32
1.5 128x128 CSTN LCD Abstract: tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD Text: JEWEL HILL ELECTRONIC CO.,LTD. JEWEL HILL ELECTRONIC CO.,LTD. SPECIFICATIONS FOR LCD MODULE GT2016 Module No. Office Address: Rm. 518,5/F., 101 Shangbu Industrial District, HuaqiangNorthRoad, Shenzhen, China TEL : 86 -755-83362489 83617492 FAX: (86)-755-83286396	Original	PDF	GT2016 TL0350F1 1.5 128x128 CSTN LCD tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD
GT20G101 Abstract: No abstract text available Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT20G101 2-10S1C GT20G101
GT20J101 Abstract: GT20J301 Text: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT20J101 GT20J101 GT20J301
88E1116 Abstract: nvidia nforce4 dme1737 nvidia temperature 88E1116-CAA am2 pin temperature socket 940 am2 pin AM2 socket nForce4 B2925 Text: www.tyan.com Versatile 1U Server Platform Transport GT20 B2925G20V4H Entry 1U Server Platform with AMD Opteron 1000 Socket AM2 Front View(B2925G20V4H) ● Support one AMD Opteron 1000 series processor (AM2 socket) ● Nvidia nForce Pro 3400 ● Four (4) DDR2 DIMMs, supporting max.8GB unbuffered, ECC/non-ECC	Original	PDF	B2925G20V4H B2925G20V4H) DDR2-533/667/800 Marvell88E1116-CAA 14500rpm 88E1116 nvidia nforce4 dme1737 nvidia temperature 88E1116-CAA am2 pin temperature socket 940 am2 pin AM2 socket nForce4 B2925
transistor equivalent 20j321 Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT20J321 transistor equivalent 20j321 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
GT20J121 Abstract: gt20j1 Text: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT20J121 O-220SIS GT20J121 gt20j1
GT20J301 Abstract: No abstract text available Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage	Original	PDF	GT20J301 GT20J301
Untitled Abstract: No abstract text available Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •	OCR Scan	PDF	GT2QG102 GT20G102 2-10S2C
Untitled Abstract: No abstract text available Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive	OCR Scan	PDF	GT20G102
transistor d 4515 Abstract: Transistor 4515 2-21F1C GT20D101 Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.) . Complementary to GT20D201	OCR Scan	PDF	GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101
T20D201 Abstract: gt20d201 Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101	OCR Scan	PDF	GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

Untitled Abstract: No abstract text available Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode	OCR Scan	PDF	GT20G101 TcS70Â
Untitled Abstract: No abstract text available Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : \| Yfe I =10S (TYP.)	OCR Scan	PDF	T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201
Untitled Abstract: No abstract text available Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive	OCR Scan	PDF	GT20G101
Untitled Abstract: No abstract text available Text: GT20J311 TOSHIBA TENTATIVE TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT20J311 HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : t f = 0.30/iS Max. Low Saturation Voltage : V q e ( s a t ) = 2.7V (Max.)	OCR Scan	PDF	GT20J311 30/iS
GT20D101 Abstract: GT20D201 pc180 Text: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)	OCR Scan	PDF	TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180
Untitled Abstract: No abstract text available Text: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S (Typ.) Complementary to GT20D10i	OCR Scan	PDF	GT20D201 GT2QD201 --250V GT20D10i
cs7e Abstract: No abstract text available Text: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •	OCR Scan	PDF	GT20G102 2-10S2C cs7e
Untitled Abstract: No abstract text available Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : \|Y fe\|= 10S(Typ.)	OCR Scan	PDF	GT20D101 GT20D201 F001EAA2'
Untitled Abstract: No abstract text available Text: GT20J301 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V c e (sat) = 2-^^ (Max.)	OCR Scan	PDF	GT20J301 30//s --100A
GT20D101 Abstract: No abstract text available Text: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5	OCR Scan	PDF	GT20D101 GT20D201 100mA GT20D101

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Samsung Electro-Mechanics CIGT201610LH2R2MNE

Susumu Co Ltd RGT2012P-2490-B-T5

Susumu Co Ltd RGT2012P-153-B-T5

Susumu Co Ltd RGT2012P-303-B-T5

Susumu Co Ltd RGT2012P-512-B-T5

GT20 Datasheets (122)

GT20 Datasheets Context Search

GT20G101

GT20J311

transistor equivalent 20j321

1.5 128x128 CSTN LCD

GT20G101

GT20J101

88E1116

transistor equivalent 20j321

GT20J121

GT20J301

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transistor d 4515

T20D201

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GT20D101

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cs7e

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GT20D101