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GT100DA60U Abstract: No abstract text available Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 2002/95/EC 18-Jul-08 GT100DA60U
GT100DA60U Abstract: No abstract text available Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U
GT100DA60U Abstract: No abstract text available Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA60U
Untitled Abstract: No abstract text available Text: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability	Original	PDF	VS-GT100DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
GT100DA60U Abstract: No abstract text available Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U
gt100da60u Abstract: 184 324 DIODE V301000 gt100 Text: GT100DA60U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 2002/95/EC 18-Jul-08 gt100da60u 184 324 DIODE V301000 gt100
GT100DA60U Abstract: No abstract text available Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	GT100DA60U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA60U
GT100DA60U Abstract: No abstract text available Text: GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft	Original	PDF	GT100DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA60U