Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GSM WCDMA REPEATER CIRCUIT Search Results

    GSM WCDMA REPEATER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    GSM WCDMA REPEATER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSM WCDMA repeater circuit

    Abstract: GSM repeater power amplifier module umts repeater circuit DP-36 IMT-2000 RFM2140-10 gsm wcdma repeater
    Text: Power Amplifier RFM2140-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost


    Original     		PDF RFM2140-10 DP-36 IMT-2000, DP-36) GSM WCDMA repeater circuit GSM repeater power amplifier module umts repeater circuit DP-36 IMT-2000 RFM2140-10 gsm wcdma repeater

    DP-36

    Abstract: IMT-2000 GSM repeater circuit GSM repeater ic GSM WCDMA repeater circuit
    Text: Power Amplifier RFM2140-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost


    Original     		PDF RFM2140-10 DP-36 IMT-2000, DP-36 IMT-2000 GSM repeater circuit GSM repeater ic GSM WCDMA repeater circuit

    GSM 3g repeater circuit

    Abstract: GSM repeater circuit gsm repeater
    Text: MCM LNA LCL0912-L / LCL1512-L LCL1812-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL0912-L LCL1512-L LCL1812-L CP-16B GSM 3g repeater circuit GSM repeater circuit gsm repeater

    GSM 3g repeater circuit

    Abstract: LCL1502 LCL1502-L repeater GSM LNA GSM repeater circuit gsm repeater LCL0402-L gsm wcdma repeater
    Text: MCM LNA LCL0402-L / LCL0902-L LCL1502-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL0402-L LCL0902-L LCL1502-L CP-16B GSM 3g repeater circuit LCL1502 LCL1502-L repeater GSM LNA GSM repeater circuit gsm repeater gsm wcdma repeater

    transistor z9

    Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
    Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package


    Original     		PDF RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF

    Untitled

    Abstract: No abstract text available
    Text: MCM LNA LCL1904-L / LCL2304-L LCL3504-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL1904-L LCL2304-L LCL3504-L CP-16B

    Untitled

    Abstract: No abstract text available
    Text: MCM LNA LCL1802-L / LCL1902-L LCL2102-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL1802-L LCL1902-L LCL2102-L CP-16B

    GSM 3g repeater circuit

    Abstract: No abstract text available
    Text: MCM LNA LCL1503-L / LCL1803-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL1503-L LCL1803-L CP-16B GSM 3g repeater circuit

    Untitled

    Abstract: No abstract text available
    Text: MCM LNA LCL3212-L / LCL3512-L LCL3712-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL3212-L LCL3512-L LCL3712-L CP-16B

    Untitled

    Abstract: No abstract text available
    Text: MCM LNA LCL1903-L / LCL2103A-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL1903-L LCL2103A-L CP-16B

    GSM 3g repeater circuit

    Abstract: LCL2302-L parameters
    Text: MCM LNA LCL2302-L / LCL2702-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL2302-L LCL2702-L CP-16B GSM 3g repeater circuit LCL2302-L parameters

    GSM 3g repeater circuit

    Abstract: GSM WCDMA repeater circuit
    Text: MCM LNA LCL2603-L / LCL3503-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL2603-L LCL3503-L CP-16B GSM 3g repeater circuit GSM WCDMA repeater circuit

    GSM 3g repeater circuit

    Abstract: No abstract text available
    Text: MCM LNA LCL2112-L / LCL2312-L LCL2712-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging


    Original     		PDF LCL2112-L LCL2312-L LCL2712-L CP-16B GSM 3g repeater circuit

    Untitled

    Abstract: No abstract text available
    Text: Page 1 of 2 English OM7922 OM7922 - Variable gain amplifier BGA7204 customer evaluation kit information Demo board description The BGA7204 customer evaluation kit enables the user to evaluate the performance of the variable gain amplifier BGA7204. The kit


    Original     		PDF OM7922 OM7922 BGA7204 BGA7204. BGA7204 OM7922/BGA7204

    lte RF Transceiver 450MHz

    Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS101021 lte RF Transceiver 450MHz RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		PDF RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


    Original     		PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,

    transistor sp 772

    Abstract: No abstract text available
    Text: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz


    Original     		PDF RT232 50MHz 33dBm 36dBm 900MHz 14GHz IMT-2000 SP-12 RT232 IMT-2000, transistor sp 772

    CMY210

    Abstract: GSM repeater circuit GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS cdma repeater circuit Signal Path Designer
    Text: Demonstration Board Documentation / Applications Note V1.0 CMY210 Ultra linear General purpose up/down mixer Features: • Very High Input IP3 of 24 dBm typical • Very Low LO Power demand of 0 dBm typical; Wide input range • Wide LO Frequency Range: <500 MHz to


    Original     		PDF CMY210 CMY210 1000pF 869-894MHz 1000pF 18401870MHz 19301990MHz GSM repeater circuit GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS cdma repeater circuit Signal Path Designer

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    GSM repeater circuit using transistor

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		PDF RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz


    Original     		PDF RT232 50MHz 33dBm 36dBm 900MHz 14GHz IMT-2000 SP-12 RT232 IMT-2000,

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240