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    Murata Manufacturing Co Ltd GRM55DR61H106KA88L

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 50V, 10% +TOL, 10% -TOL, X5R, 15% TC, 10UF, SURFACE MOUNT, 2220
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    Quest Components GRM55DR61H106KA88L 29
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    TTI GRM55DR61H106KA88L Reel 3,000 1,000
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    GRM55DR61H106KA88L Cut Tape 1,570 10
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    TME GRM55DR61H106KA88L 1,000
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    Avnet Abacus GRM55DR61H106KA88L Reel 19 Weeks 1,000
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    Murata Manufacturing Co Ltd GRM55DR61H106KA88

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    Chip-Germany GmbH GRM55DR61H106KA88 14
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    GRM55DR61H106KA88 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM55DR61H106KA88L muRata Chip Monolithic Ceramic Capacitor for DC-DC Converters Original PDF

    GRM55DR61H106KA88 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM32/43/55 Data Sheet Monolithic Ceramic Capacitors GRM55DR61H106KA88p 2220, X5R, 10µF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.70mm±0.40mm Code


    Original     		PDF GRM32/43/55 GRM55DR61H106KA88p 50Vdc) 180mm 330mm 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55DR61H106KA88p 2220, X5R, 10µF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code


    Original     		PDF GRM55DR61H106KA88p 50Vdc) 180mm 330mm 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55DR61H106KA88p 2220, X5R, 10µF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code


    Original     		PDF GRM55DR61H106KA88p 50Vdc) 180mm 330mm

    GRM55DR72J224KW01L

    Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
    Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05


    Original     		PDF 10/16/25/50V GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GRM55DR72J224KW01L gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188

    MRF6S19060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060NR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20161HS MRF8P20161HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MD7P19130H MD7P19130HR3 MD7P19130HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9205H MRFE6S9205HR3 MRFE6S9205HSR3 MRFE6S9205HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9135H MRFE6S9135HR3 MRFE6S9135HSR3 MRFE6S9135HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		PDF MW7IC915N MW7IC915N MW7IC915NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 10yees, MRF7P20040HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		PDF MD7IC2251N MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1