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    onsemi SGP20N35CL

    SMARTDISCRETES INTERNALLY CLAMPED, N-CHANNEL IGBT Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-220AB
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    ComSIT USA SGP20N35CL 300
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    GP20N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by GP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) T his Logic Level Insulated G ate B ip o la r T ra n s is to r (IG BT)


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