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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF GGlb343 KM416C1000 KM416C1000 130ns KM416C1000-8 150ns KM416C1000-10 100ns 180ns KM416C1000-7

    MT28F002B1VG-8 B

    Abstract: No abstract text available
    Text: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at


    OCR Scan     		PDF MT28F002B1 100ns 110ns, 150ns 40-Pin VMT28F002B1 001b34b MT28F002B1VG-8 B