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    GERMANIUM SCHOTTKY DIODE Search Results

    GERMANIUM SCHOTTKY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Germanium DO-35 DIODE

    Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
    Text: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster


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    PDF CDSH270 1N270 DO-35 100mA 200mA 16-August Germanium DO-35 DIODE Germanium Schottky diode diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium

    cross reference zener diodes

    Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
    Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37


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    BKC Semiconductors

    Abstract: BAT43 SMD D0213AA D0-213AA Germanium Schottky diode
    Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.


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    PDF DO-35 BAT43 DO-213AA) 300pSecs OT-23 BAR43) D0-213AA 01g41 BKC Semiconductors BAT43 SMD D0213AA Germanium Schottky diode

    BKC Semiconductors

    Abstract: DSAIH0002561
    Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.


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    PDF DO-35 BAT43 DO-213AA) 300pSecs OT-23 BAR43) DO-213AA BKC Semiconductors DSAIH0002561

    BKC Semiconductors

    Abstract: Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561
    Text: Schottky Diode I BAT42 Applications DO-35 Glass Guard ring protected schottky barrier. Low forward drop.Excellent protection for M O S devices. Ideal replacem ent for germanium diodes, used in small fast mo­ tor applications such as CD ROMs and hard disc drives. Efficient portable sys­


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    PDF BAT42 DO-35 Length25 DO-213AA 681-039S BKC Semiconductors Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561

    BKC Semiconductors

    Abstract: BAT46 smd
    Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Efficient portable systems battery isolator. Features DO-35 Glass Package Six Sigma quality


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    PDF DO-35 BAT46 002er' DO-213AA) 300pS DO-213AA BKC Semiconductors BAT46 smd

    Germanium Power Devices

    Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
    Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993


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    PDF GD60S20 310mv 260mv 230mv 360mv 300mv 27500ma 350ma 300ma 2000pf Germanium Power Devices Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp

    DSAIH00025313

    Abstract: No abstract text available
    Text: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.


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    PDF DO-35 BAT42 DO-213AA) 300jjSecs DO-213AA 01g41 DSAIH00025313

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    Germanium Power Diodes

    Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
    Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle


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    PDF G40S20 300usec 400mv 340mv 310mv 450mv 390mv 360mv 490mv 430mv Germanium Power Diodes T-75 A HIGH VOLTAGE DIODES Germanium power Germanium Power Devices G40S20 germanium

    DSAIH0002561

    Abstract: BAT46 smd
    Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Features • • • • • • • • DO-35 Glass Package Six Sigma quality Humidity proof glass


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    PDF DO-35 BAT46 DO-213AA) 300pS 300pSecs DO-213AA DSAIH0002561 BAT46 smd

    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    diode germanium 1n276

    Abstract: Germanium Schottky diode D0Q0330 DSAIH0002536
    Text: B K C INTERNATIONAL 1 1 7 ^ 0 3 D0Q0330 h 30E D O 3 .-O7 FEATURES • • • ♦ Solder plate DO-7 package Very low noise level Non-ESD sensitive >15 KV Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES & • Thirty years of proven reliability « Ideally suited for schottky diode replacement;


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    PDF D0Q0330 1N276 MIL-S-19500 300nS diode germanium 1n276 Germanium Schottky diode DSAIH0002536

    G60S15

    Abstract: G60S10 Germanium power
    Text: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps


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    PDF 0000S48 G60S15 G60S10 Germanium power

    Fast Recovery Diodes Cross Reference

    Abstract: Rectifiers High Efficient Rectifiers Fast Recovery Rectifiers cross reference zener diodes SCHOTTKY DIODES CROSS REFERENCE
    Text: MCC TABLE OF C O NTENTS I II) PART INDEX CASE STYLE REFERENCE GUIDE 3 16 HIGH SPEED SWITCHING DIODES 16 BRIDGE RECTIFIERS 17 HIGH EFFICIENT RECTIFIERS " 19 SUPERFAST RECOVERY RECTÏFÎËRS 20 FAST RECOVERY RECTIFIERS 23 STANDARD RECOVERY RECTIFIERS 24 SCHO TTKY REC TlFIERS


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    Germanium Power Devices

    Abstract: G30S20 germanium Germanium power
    Text: G E R M A N I U M PO WER D E V I C E S b3E D • 3=147375 O G O G S ^ ? 71S ■ 6 P » ES ermanium Power Devices Corp. Ge Schottky Rectifier D04 pkg High Reverse Energy/Ultra-Low Vp Type # G30S20 May 1993 MAXIMUM RATINGS: IF avg IFM IFSM VRWM R0jc Tj IRRM


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    PDF G30S20 300psec 310mv 350mv 1500pf 70nsec Germanium Power Devices G30S20 germanium Germanium power

    Germanium Schottky diode

    Abstract: silicon diode and germanium ST Low Forward Voltage Schottky Diode 1N6263 Germanium Diodes Germanium DO-35 DIODE schottky diode ST Germanium power
    Text: Datasheet Central 1N6263 SILICON LOW CURRENT SCHOTTKY BARRIER DIODE Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors D ESCRIPTION


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    PDF 1N6263 DO-35 Germanium Schottky diode silicon diode and germanium ST Low Forward Voltage Schottky Diode 1N6263 Germanium Diodes Germanium DO-35 DIODE schottky diode ST Germanium power

    Germanium Schottky diode

    Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
    Text: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for


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    PDF DO-35 200mA 200mA, Germanium Schottky diode CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode

    diode germanium 1n270

    Abstract: Germanium DO-35 DIODE 1n270 Germanium Schottky diode 1950S 1N277 CDSH270 Switching diode 50V 200mA 1N270 diode diodes 1n270
    Text: V Datasheet fnV il l~Pf 1 W S llliiS I 1 Semiconductor Corp. CDSH270 SCHOTTKY DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH270 is a Silicon Schottky diode specially designed to replace


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    PDF CDSH270 DO-35 CDSH270 1N270 1N277, 100mA 200mA diode germanium 1n270 Germanium DO-35 DIODE Germanium Schottky diode 1950S 1N277 Switching diode 50V 200mA 1N270 diode diodes 1n270

    Silicon Point Contact Diode

    Abstract: No abstract text available
    Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


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    PDF 375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


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    1N283

    Abstract: No abstract text available
    Text: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A


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    PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283

    1N295

    Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
    Text: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0


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    PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 diodes 1N34A 1N91 diode DO-7 1N93 1N91 1N92 1N4502

    Germanium Schottky diode

    Abstract: germanium rectifier diode diode arrays
    Text: M^E D INTERNATIONAL SEMICOND • =5000370 OOOOOlfi ÔEb U I Z E n DIODE ARRAYS COST REDUCTION MINIATURIZATION APPLICATIO NS Com puter Peripherals Instrumentation Office Equipm ent A utom otive A u d io /V id e o Control Boards Home Appliances Power Supplies


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    PDF 1N4148, 1N4150, Germanium Schottky diode germanium rectifier diode diode arrays