Germanium DO-35 DIODE
Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
Text: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster
|
Original
|
PDF
|
CDSH270
1N270
DO-35
100mA
200mA
16-August
Germanium DO-35 DIODE
Germanium Schottky diode
diode germanium 1n270
DIODE marking 16
schottky diode
1N270 germanium
|
cross reference zener diodes
Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37
|
Original
|
PDF
|
|
BKC Semiconductors
Abstract: BAT43 SMD D0213AA D0-213AA Germanium Schottky diode
Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.
|
OCR Scan
|
PDF
|
DO-35
BAT43
DO-213AA)
300pSecs
OT-23
BAR43)
D0-213AA
01g41
BKC Semiconductors
BAT43 SMD
D0213AA
Germanium Schottky diode
|
BKC Semiconductors
Abstract: DSAIH0002561
Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.
|
OCR Scan
|
PDF
|
DO-35
BAT43
DO-213AA)
300pSecs
OT-23
BAR43)
DO-213AA
BKC Semiconductors
DSAIH0002561
|
BKC Semiconductors
Abstract: Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561
Text: Schottky Diode I BAT42 Applications DO-35 Glass Guard ring protected schottky barrier. Low forward drop.Excellent protection for M O S devices. Ideal replacem ent for germanium diodes, used in small fast mo tor applications such as CD ROMs and hard disc drives. Efficient portable sys
|
OCR Scan
|
PDF
|
BAT42
DO-35
Length25
DO-213AA
681-039S
BKC Semiconductors
Germanium DO-35 DIODE
germanium diodes forward drop
DSAIH0002561
|
BKC Semiconductors
Abstract: BAT46 smd
Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Efficient portable systems battery isolator. Features DO-35 Glass Package Six Sigma quality
|
OCR Scan
|
PDF
|
DO-35
BAT46
002er'
DO-213AA)
300pS
DO-213AA
BKC Semiconductors
BAT46 smd
|
Germanium Power Devices
Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993
|
OCR Scan
|
PDF
|
GD60S20
310mv
260mv
230mv
360mv
300mv
27500ma
350ma
300ma
2000pf
Germanium Power Devices
Germanium Power Diodes
430mv
germanium
Germanium power
Germanium Power Devices Corp
|
DSAIH00025313
Abstract: No abstract text available
Text: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.
|
OCR Scan
|
PDF
|
DO-35
BAT42
DO-213AA)
300jjSecs
DO-213AA
01g41
DSAIH00025313
|
back Tunnel diode
Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.
|
OCR Scan
|
PDF
|
|
Germanium Power Diodes
Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle
|
OCR Scan
|
PDF
|
G40S20
300usec
400mv
340mv
310mv
450mv
390mv
360mv
490mv
430mv
Germanium Power Diodes
T-75 A HIGH VOLTAGE DIODES
Germanium power
Germanium Power Devices
G40S20
germanium
|
DSAIH0002561
Abstract: BAT46 smd
Text: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Features • • • • • • • • DO-35 Glass Package Six Sigma quality Humidity proof glass
|
OCR Scan
|
PDF
|
DO-35
BAT46
DO-213AA)
300pS
300pSecs
DO-213AA
DSAIH0002561
BAT46 smd
|
back Tunnel diode
Abstract: Tunnel Diode tunnel diode application
Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.
|
OCR Scan
|
PDF
|
|
diode germanium 1n276
Abstract: Germanium Schottky diode D0Q0330 DSAIH0002536
Text: B K C INTERNATIONAL 1 1 7 ^ 0 3 D0Q0330 h 30E D O 3 .-O7 FEATURES • • • ♦ Solder plate DO-7 package Very low noise level Non-ESD sensitive >15 KV Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES & • Thirty years of proven reliability « Ideally suited for schottky diode replacement;
|
OCR Scan
|
PDF
|
D0Q0330
1N276
MIL-S-19500
300nS
diode germanium 1n276
Germanium Schottky diode
DSAIH0002536
|
G60S15
Abstract: G60S10 Germanium power
Text: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps
|
OCR Scan
|
PDF
|
0000S48
G60S15
G60S10
Germanium power
|
|
Fast Recovery Diodes Cross Reference
Abstract: Rectifiers High Efficient Rectifiers Fast Recovery Rectifiers cross reference zener diodes SCHOTTKY DIODES CROSS REFERENCE
Text: MCC TABLE OF C O NTENTS I II) PART INDEX CASE STYLE REFERENCE GUIDE 3 16 HIGH SPEED SWITCHING DIODES 16 BRIDGE RECTIFIERS 17 HIGH EFFICIENT RECTIFIERS " 19 SUPERFAST RECOVERY RECTÏFÎËRS 20 FAST RECOVERY RECTIFIERS 23 STANDARD RECOVERY RECTIFIERS 24 SCHO TTKY REC TlFIERS
|
OCR Scan
|
PDF
|
|
Germanium Power Devices
Abstract: G30S20 germanium Germanium power
Text: G E R M A N I U M PO WER D E V I C E S b3E D • 3=147375 O G O G S ^ ? 71S ■ 6 P » ES ermanium Power Devices Corp. Ge Schottky Rectifier D04 pkg High Reverse Energy/Ultra-Low Vp Type # G30S20 May 1993 MAXIMUM RATINGS: IF avg IFM IFSM VRWM R0jc Tj IRRM
|
OCR Scan
|
PDF
|
G30S20
300psec
310mv
350mv
1500pf
70nsec
Germanium Power Devices
G30S20
germanium
Germanium power
|
Germanium Schottky diode
Abstract: silicon diode and germanium ST Low Forward Voltage Schottky Diode 1N6263 Germanium Diodes Germanium DO-35 DIODE schottky diode ST Germanium power
Text: Datasheet Central 1N6263 SILICON LOW CURRENT SCHOTTKY BARRIER DIODE Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors D ESCRIPTION
|
OCR Scan
|
PDF
|
1N6263
DO-35
Germanium Schottky diode
silicon diode and germanium
ST Low Forward Voltage Schottky Diode
1N6263
Germanium Diodes
Germanium DO-35 DIODE
schottky diode ST
Germanium power
|
Germanium Schottky diode
Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
Text: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for
|
OCR Scan
|
PDF
|
DO-35
200mA
200mA,
Germanium Schottky diode
CDSH-4
Germanium DO-35 DIODE
30V 200mA schottky barrier diode
|
diode germanium 1n270
Abstract: Germanium DO-35 DIODE 1n270 Germanium Schottky diode 1950S 1N277 CDSH270 Switching diode 50V 200mA 1N270 diode diodes 1n270
Text: V Datasheet fnV il l~Pf 1 W S llliiS I 1 Semiconductor Corp. CDSH270 SCHOTTKY DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH270 is a Silicon Schottky diode specially designed to replace
|
OCR Scan
|
PDF
|
CDSH270
DO-35
CDSH270
1N270
1N277,
100mA
200mA
diode germanium 1n270
Germanium DO-35 DIODE
Germanium Schottky diode
1950S
1N277
Switching diode 50V 200mA
1N270 diode
diodes 1n270
|
Silicon Point Contact Diode
Abstract: No abstract text available
Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard
|
OCR Scan
|
PDF
|
375GHz
DC1596)
OC1301)
-10dB
-20dB
35GHz
150pA.
Silicon Point Contact Diode
|
diode 5082-2800
Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description
|
OCR Scan
|
PDF
|
|
1N283
Abstract: No abstract text available
Text: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A
|
OCR Scan
|
PDF
|
1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
|
1N295
Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Text: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0
|
OCR Scan
|
PDF
|
1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
1N295
diodes 1N34A
1N91 diode
DO-7
1N93
1N91
1N92
1N4502
|
Germanium Schottky diode
Abstract: germanium rectifier diode diode arrays
Text: M^E D INTERNATIONAL SEMICOND • =5000370 OOOOOlfi ÔEb U I Z E n DIODE ARRAYS COST REDUCTION MINIATURIZATION APPLICATIO NS Com puter Peripherals Instrumentation Office Equipm ent A utom otive A u d io /V id e o Control Boards Home Appliances Power Supplies
|
OCR Scan
|
PDF
|
1N4148,
1N4150,
Germanium Schottky diode
germanium rectifier diode
diode arrays
|