SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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PC2710TB
Abstract: ro4003 PC3223TB marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
PC2710TB
ro4003
PC3223TB
marking c3j
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PC3225
Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
HS350
WS260
IR260
PU10734EJ01V0DS
PC3225
transistor marking 6U ghz
PC2710TB
C3J marking
max3139
PC2708TB
PC2709TB
marking c1d
PC3223TB
marking c3j
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
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marking c3j
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
marking c3j
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marking C3Z
Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
HS350
WS260
IR260
PU10803EJ01V0DS
marking C3Z
marking c1h
PC2712TB
"Marking k2" mmic
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marking c1g
Abstract: C3K marking marking C3Z
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
M8E0904E
marking c1g
C3K marking
marking C3Z
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marking C3Z
Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
M8E0904E
marking C3Z
PC3242TB-E3-A
PC3242TB-E3
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PC3244TB
Abstract: germanium transistor ac 128 PC3239TB
Text: A Business Partner of Renesas Electronics Corporation. Preliminary PC3244TB Data Sheet Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
WS260
HS350
germanium transistor ac 128
PC3239TB
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SGL0363Z
Abstract: trace code marking RFMD SGL-0363Z S218 device marking sgl IrL 1540 N DS091103 rfmd model marking code trace code marking RFMD SGL0363Z
Text: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for
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SGL-0363Z
2000MHz
OT-363
SGL-0363Z
200MHz
900MHz.
170-230MHz
SGL0363Z
trace code marking RFMD
S218
device marking sgl
IrL 1540 N
DS091103
rfmd model marking code
trace code marking RFMD SGL0363Z
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PC3239TB
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary PC3244TB Data Sheet Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
WS260
HS350
PC3239TB
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transistor marking c3n
Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3226TB
PC3226TB
transistor marking c3n
PC2710TB
UPC3226TB
C3J marking
upc3225tb
marking c1d
marking c3j
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marking code C1F mmic
Abstract: marking code C1d mmic
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3225TB
PC3225TB
95GHz
IR260
WS260
HS350
PU10500EJ01V0DS
marking code C1F mmic
marking code C1d mmic
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germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
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2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
germanium transistors NPN
TO13
MT28
Germanium power
2N1044
2N1045
2N2556
2N2557
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Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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1N3716
Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom
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1N3712-20
1H3713-21
IN3712
1N3720
1N3713
1N3721
1N37131N3721
1N3721
3S47375
000073S
1N3716
diode germanium tu 38 f
1N3717
1N3714
1N3712
diode germanium tu 38 e
1n3719
1N3715
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2N3215
Abstract: MT28 TO13 2n3214 Germanium power
Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r
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3TM7375
2N2668
2N2669
2N2670
2N1042
2N1043
2N1044
2N1045
2N2556
2N2557
2N3215
MT28
TO13
2n3214
Germanium power
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2N3614
Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N3614
2N441
2N1553
2N1560
2N511B
2N669
2N511
2N3312
1534a
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GU1A100SB
Abstract: GU1A100 germanium
Text: □ GERMANIUM POWER DEVICES b3E D 3^47375 □DDOS'ìl 2T7 « G P D EXTREMELY LOW Vf GERMANIUM RECTIFIERS Io • MAXIMUM RATINGS VRM VRM rep (non-rep) Volts Volts IF M vr (RMS) Volts (surge) Amp FAMILY PKG Amp G500R2 D0200AB 500 20 24 14 12,000 G200R4 D0200AA
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G500R2
D0200AB
G200R4
D0200AA
G200R4SB
GU1A100
G60R4
G30R4
GD60R4
GD30R4
GU1A100SB
GU1A100
germanium
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transistor 2SC114
Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
transistor 2SC114
transistor BD400
BD109
2SC114 transistor
transistor t08
usaf516es047m
2SC114
2SD155 L
transistor 2Sd154
usaf517es060m
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Cv7003
Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm
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2772SC
7726A
27727X.
34768X
GET103
31419X
BS9300-C084)
31428H
GET116
31420B
Cv7003
Newmarket Transistors
cv7042
OC71
cv7004
CV 7085
OC72
OA47 germanium
oc77
OA91
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MP2060
Abstract: MP2063 100-C MP2061 MP2062 Germanium power *p2861
Text: MP2060 thru MP2063 GERMANIUM STYLE): PIN 1. BASE 2. EMITTER CASE:COLLECTOR CASE 11 PNP germanium power tran sisto rs for audio am plifier applications. M AXIM UM R A T IN G S Symbol R a tin g Emitter-Base Voltage Collector Current (Continuous) V CES VCEO
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MP2060
MF2063
MP20S1
MP2062
MP2063
MP2060
MP2061
MP20S2
MP2063
100-C
MP2061
Germanium power
*p2861
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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