IXXH100N60B3
Abstract: 100n60
Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60B3
IC110
150ns
O-247
100N60B3
0-10-A
IXXH100N60B3
100n60
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IXGH72N60C3
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient
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IXGH72N60C3
IC110
40-100kHz
72N60C3
11-25-09-C
IXGH72N60C3
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IXGN400N60B3
Abstract: No abstract text available
Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IXGN400N60B3
OT-227B,
E153432
IC110
400N60B3
IXGN400N60B3
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IXGK55N120A3H1
Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGK55N120A3H1
IXGX55N120A3H1
IC110
O-264
338B2
IXGK55N120A3H1
IXGX55N120A3H1
IXGX55N120
PLUS247
IC110
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IXGN320N60A3
Abstract: No abstract text available
Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN320N60A3
OT-227B,
E153432
IC110
320N60A3
3-08-A
IXGN320N60A3
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IXGX320N60A3
Abstract: IXGK320N60A3 PLUS247
Text: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK320N60A3
IXGX320N60A3
O-264
IC110
320N60A3
3-08-A
IXGX320N60A3
IXGK320N60A3
PLUS247
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IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN200N60B3
IC110
5-40kHz
OT-227B,
E153432
200N60B3
8-08-A
IXGN200N60B3
9V DC INPUT and gate ic
IGBT 100V 100A
igbt 100a 150v
SOT227B
123B16
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IXYH82N120C3
Abstract: DS100335
Text: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH82N120C3
IC110
O-247
062in.
82N120C3
IXYH82N120C3
DS100335
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8n90c
Abstract: 8n90 IXYP8N90C3 IGBTS
Text: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYY8N90C3
IXYP8N90C3
IC110
130ns
O-252
062in.
O-220)
O-252
O-220
8n90c
8n90
IXYP8N90C3
IGBTS
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IXYH50N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH50N120C3
IC110
O-247
062in.
50N120C3
IXYH50N120C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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40-100kHz
IXGH60N60C3
IC110
O-247
60N60C3
02-12-08-B
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QR30
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
QR30
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N90C3
IC110
110ns
O-247
062in.
40N90C3D1
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30N60B3D
Abstract: No abstract text available
Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXH30N60B3D1
IC110
125ns
O-247
IF110
30N60B3D1
30N60B3D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.30V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXYH100N65C3
IC110
20-60kHz
O-247
100N65C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN120N60A3
IXGN120N60A3D1
IC110
OT-227B,
E153432
IF110
2x61-06A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 30A 2.7V 37ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH30N65C3
IC110
20-60kHz
O-247
30N65C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH20N65C3
IC110
O-247
20N65C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH30N65C3
IC110
20-60kHz
O-247
30N65C3
4D-R47)
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE sat 1.80V TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
IC110
O-263
O-220
50N60B3D1
3-13-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N65C3
IC110
O-247
40N65C3H1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings
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IXYT30N65C3H1HV
IXYH30N65C3H1
20-60kHz
IC110
O-268HV
IF110
30N65C3
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120N60A3
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGK120N60A3 IXGX120N60A3 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V
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IXGK120N60A3
IXGX120N60A3
IC110
O-264
120N60A3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 600V XPTTM IGBT GenX3TM IXXH150N60C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXH150N60C3
IC110
20-60kHz
O-247
150N60C3
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