Industriel
Abstract: EUROFARAD industrial eurofarad electronique pratique condensateur au papier RC snubber dv/dt diode gto hacheur Metallized plastic film Self healing Eurofarad GTO catalogue defibrillator
Text: • RÉPERTOIRE DES CONDENSATEURS POUR ÉLECTRONIQUE DE PUISSANCE ■ LIST OF CAPACITORS FOR POWER ELECTRONICS GÉNÉRALITÉS SUR LES CONDENSATEURS POUR ÉLECTRONIQUE DE PUISSANCE GENERAL INFORMATION ON CAPACITORS FOR POWER ELECTRONICS 34 GÉNÉRALITÉS SUR LES CONDENSATEURS
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S228
Abstract: crydom S218
Text: Series 2 8Amp • 120, 240 Vac - AC OUTPUT • • • • Zero Voltage Switching 2500 Volt Isolation Panel Mount Triac Output C U R R E N T D E R AT I N G C U R V E S Relays combine small size and high ratings in a package designed for easy heat sink or panel mounting. Standard
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S228C
SJ/T11364
SJ/T11364
S228
crydom S218
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gblcsc08clc
Abstract: No abstract text available
Text: 05304 GBLCSC08CLC Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCSC08CLC is an ultra low capacitance transient voltage suppressor array, designed to protect applications such as portable electronics and SMART phones. This device is available in a bidirectional configuration and is rated for 125
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GBLCSC08CLC
GBLCSC08CLC
SC-79
61cerning
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GBLCxxLC and GBLCxxCLC Series
Abstract: No abstract text available
Text: 05296 GBLC03LC - GBLC05CLC Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxxLC and GBLCxxCLC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and
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GBLC03LC
GBLC05CLC
OD-323
OD-32cerning
GBLCxxLC and GBLCxxCLC Series
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 xA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
TC54VC,
forTC54VN)
OT-23A-3
OT-89-3
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marking T233 SOT-23-5
Abstract: sot-89 marking UG as 893 m
Text: 'v Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 |iA operating current and small surfacemount packaging. Each part Is laser trimmed to the desired
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OT-23,
OT-89,
OT-23-5
OT-89-3
OT-23-5/SOT-89-3:
OT-89-3:
OT-23-5:
OT-23-3
OT-89-3
marking T233 SOT-23-5
sot-89 marking UG
as 893 m
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1jaA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
T-23A-3
SC-59)
TC54-13
TC54-12
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1jaA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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T-23A-3
SC-59)
TC54-13
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marking KE SOT-89
Abstract: code marking HY SOT-23
Text: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1|aA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
low-curr10
T-23A-3
SC-59)
TC54-12
TC54-12
marking KE SOT-89
code marking HY SOT-23
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1|iA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
OT-23A-3
SC-59)
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Untitled
Abstract: No abstract text available
Text: 1SS364 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS364 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Or = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS364
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npn TRANSISTOR c105
Abstract: 2SA1587 2SC4117 X10-5
Text: 2SC4117 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 17 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hjpg Linearity High hpE Low Noise Complementary to 2SA1587 Small Package V CEO = 120V hpE (IC = 0.1mA) / hpE (Ic = 2mA)
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2SC4117
2SA1587
npn TRANSISTOR c105
2SC4117
X10-5
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 xA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
TC54VC,
TC54VN)
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Untitled
Abstract: No abstract text available
Text: 1SV306 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE 1 SVB06 Unit in mm 2.1 ± 0.1 • • j 1 -25± O.lj Small Package Ultra Low Series Resistance : rs = 0.20H Typ. EE2 -EB- CHARACTERISTIC Reverse Voltage
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1SV306
SVB06
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Discriminator sot-23-5
Abstract: T893
Text: Semiconductor, Inc. TC44 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • ■ The TC44 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 pA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23-5
OT-89-3
OT-89
OT-23-5:
OT-23-5/SOT-89:
OT-23-5
OT-89-3
Discriminator sot-23-5
T893
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SV271
Abstract: No abstract text available
Text: TOSHIBA DIODE SEM ICONDUCTOR 1 SV271 T n C U ID A • w w ■ II TECHNICAL DATA SILICON EPITAXIAL PIN TYPE 1SV271 VHF-UHF BAND RF ATTENUATOR APPLICATIONS • Useful for Small Size Tuner • Small Total Capacitance : Cx = 0.25pF (Typ.) • Low Series Resistance
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SV271
1SV271)
9S1Q01EAA1
1SV271
100/i
SV271
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GENERAL SEMICONDUCTOR MARKING UD
Abstract: 1SV225
Text: TOSHIBA 1SV225 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 22 5 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV225
SC-59
GENERAL SEMICONDUCTOR MARKING UD
1SV225
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2sk18
Abstract: No abstract text available
Text: TOSHIBA 2SK1827 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2S K 18 2 7 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1827
10//S
2sk18
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2SK182
Abstract: LTF5
Text: 2SK1826 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 82 6 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1826
2SK182
LTF5
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cti dro
Abstract: No abstract text available
Text: TOSHIBA 2SK2825 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 5 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • • • • High Input Impedance 1,5V Gate Drive Low Gate Threshold Voltage Small Package
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2SK2825
cti dro
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Untitled
Abstract: No abstract text available
Text: 1SV242 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 4 2 Unit in mm TV VHF W ID E BAND TUNING + 0.5 2.5 - 0.3 High Capacitance Ratio : CIV/ C28V = 14.5 Typ. Low Series Resistance : rs = 0.65fî (Typ.) Excellent C - V Characteristics, and Small Tracking Error.
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1SV242
SC-59
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Untitled
Abstract: No abstract text available
Text: 1SS377 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 —Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 =+ Q 8 5 IO HO dd + I d i M A X IM U M RATINGS (Ta = 25°C)
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1SS377
SS377
SC-59
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)
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1SS383
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2823 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 3 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • High Input Impedance • 1,5V Gate Drive • Low Gate Threshold Voltage • Small Package
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2SK2823
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