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    GENERAL SEMICONDUCTOR EGP30D Search Results

    GENERAL SEMICONDUCTOR EGP30D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR EGP30D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction


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    PDF EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop


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    PDF EGP30A EGP30G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop


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    PDF EGP30A EGP30G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    EGP30A

    Abstract: EGP30B EGP30G GP20 J-STD-002
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop


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    PDF EGP30A EGP30G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 EGP30B EGP30G GP20 J-STD-002

    EGP30A

    Abstract: EGP30B EGP30G GP20 J-STD-002
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency


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    PDF EGP30A EGP30G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 EGP30B EGP30G GP20 J-STD-002

    general semiconductor EGP30D

    Abstract: EGP30G EGP30A EGP30D EGP30F GP20 EGP30B EGP30C
    Text: EGP30A thru EGP30G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 3.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


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    PDF EGP30A EGP30G EGP30D EGP30F general semiconductor EGP30D EGP30G EGP30D EGP30F GP20 EGP30B EGP30C

    EGP30A

    Abstract: EGP30B EGP30G GP20 JESD22-B102D J-STD-002B EGP30D
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by


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    PDF EGP30A EGP30G 2002/95/EC 2002/96/EC 08-Apr-05 EGP30B EGP30G GP20 JESD22-B102D J-STD-002B EGP30D

    EGP30D

    Abstract: general semiconductor EGP30D EGP30A EGP30B EGP30C EGP30F EGP30G GP20
    Text: EGP30A thru EGP30G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 3.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


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    PDF EGP30A EGP30G EGP30D EGP30F EGP30D general semiconductor EGP30D EGP30B EGP30C EGP30F EGP30G GP20

    EGP30A

    Abstract: No abstract text available
    Text: EGP30A thru EGP30G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 3.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


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    PDF EGP30A EGP30G EGP30A EGP30D EGP30F

    EGP30D

    Abstract: EGP30A
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by


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    PDF EGP30A EGP30G 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102s 08-Apr-05 EGP30D

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    Schottky Diode 039 B34

    Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D

    EGP30A

    Abstract: No abstract text available
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency


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    PDF EGP30A EGP30G 2002/95/EC 2002/96/EC 08-Apr-05

    EGP30A

    Abstract: EGP30B EGP30G GP20 JESD22-B102 J-STD-002
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency


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    PDF EGP30A EGP30G 2002/95/EC 2002/96/EC 18-Jul-08 EGP30B EGP30G GP20 JESD22-B102 J-STD-002

    EGP30A

    Abstract: No abstract text available
    Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 400 V IFSM 125 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C d* e t n Pate GP20 *Glass Encapsulation technique is covered by


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    PDF EGP30A EGP30G UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: EGP30D Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)0.5 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0


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    PDF EGP30D Voltage200 Time50n Voltage950m Current50u StyleDO-201

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


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    PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


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    PDF 10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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    BY27-150

    Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
    Text: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing


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    PDF sP10-1006 ZGPKM10 2GP1M10A ZGP10-110B ZGP10-12Û ZGP10-12QA ZGP10-1206 ZGP10-130 ZGP10-13QA ZGP10-130B BY27-150 GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700